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الدارات الإلكترونية PDF
الدارات الإلكترونية PDF
اﻟﻨﺒﺎﺋﻂ اﻹﻟﻜﺘﺮوﻧﻴﺔ
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אא ١٤٦ א
אא
אאא
Wאא
Kא •
Kאאאאא •
Kאאא •
Kאאא •
Kאא •
Kאאא •
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אא ١٤٦ א
אא
Introduction ١J ١
،אאאאאא
،אאאא
K(doping)אאא
אאאאאאאא
K(p-type)pJ אאא (n-type) nJ אא
אא pJ אnJ אא
pnאאאאא
Kp-nאאאKא
FאאאE٢J ١F
(Electrons)א(Holes)אp-
אאאEא
n-
אאאא،אא
Kאא אא
p-n ﻭﺼﻠﺔ
p- ﻨﻭﻉ n- ﻨﻭﻉ
ﻓﺠﻮة ﺇﻟﻜﺘﺭﻭﻥ
Kp-nאא
E٢J ١F
א אא
KאאאאE٣J ١F
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אא ١٤٦ א
אא
אאאאא
אא אא،א
nאpאאא pא
א(space-charge)אאK
(Depletion Region)אאאאאאא
.(Space-charge Region)אאא(Transition Region) א
אאKp-nאאאE٤J ١F
Kאאא
p-n ﻭﺼﻠﺔ
p- ﻨﻭﻉ n- ﻨﻭﻉ
+ +
+ +
+ +
+ +
+ +
+ +
א + א
אא
p-אאאE٤J ١F
n–אאאאאאאא
"אאאא،p–אא
،VB،"א
אאא
אא،pJ אnJ אאאאא
אאא .nJ אאאpJ אאא
אאאאאא
Kא
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אא ١٤٦ א
אא
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אא ١٤٦ א
אא
א אא
KnJ אpJ אאא،pJ אnJ א
אא
אאאא
אא אאאאאא
אאאאאאאK
אאאא
אK If(Forward current)אאא
Kאא
אאאאא
א ،E٦J ١Fאאא
K אא
אאאא
אאאאאא
אאאאא.0.7Vאאא
.0.3Vא
אאא
nJ אאאאא
K(Rp)pJ א(Rn)
،RpRnאא،אאאא
אאאאאא
Kאא
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אא ١٤٦ א
אא
אא
p + n
VB
Rp Rn
אא
+ -
אאE٦J ١F
Reverse Biasאא٢J ٤J ١
אp-nא
א pJ
،E٧J ١FאnJ א
אnJ
אא
אK
אא
אאpJ
אאאאא
אאnJ
אאאאK א
אאא ،אאpJ אאא
Kאאא
pJ
אא אאאא
אאKpJ אאאnJ
אnJ א
אאא pJ
אnJ אא
א
אא .Ir EאאFאא
אאאאא
אאאא KIo(Reverse saturation current)
K
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אא ١٤٦ א
אא
א אאאאא
אאאא،אאא אא
Kאאאא
،RpRnאא،אאא
Kאאא
p-n ﻭﺼﻠﺔ
p- ﻨﻭﻉ n- ﻨﻭﻉ
A K
+ +
+ +
Ir + +
+ +
- + ﻣﻨﻄﻘﺔ
اﻻﺳﺘﻨﺰاف
- +
אאE٧J ١F
Characteristics of the Semiconductor Diodeאאא٥J ١
אאאאאאאאא
אאE٨J ١FK
אאאא
אא.(Ge)א(Si)א
אFאאאאאאא
.(Breakdown voltage) VBRאאאE
אאאאE٨J ١Fאאאא
אאאא،אאאא
אאא 0.7Vאאאאא
אאאאא K אאא 0.3V
Kאא
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אא ١٤٦ א
אא
אא
IF, mA
Ge Si
ﺝﻬﺪ اﻻﻥﻬﻴﺎر
אא אא
VBR(Ge) VBR(Ge)
VR, V VF, V
0.3V 0.7V
IR, µA
אא
KאאאE٨J ١F
אא
אאאאאא
אא،אאאאא
50Vאאאא
אאא
Kא
אאאאאE٨J ١F
،אאאאאאאאא
אאא אא
Kאא
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אא ١٤٦ א
אא
Vi = VD + ID RLE١J ١F
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אא ١٤٦ א
אא
VD= Vi E٣J ١F
ID, mA
Vi /RL
אא
IDQ Q Eא)
א
0 VDQ Vi VD, V
VD= Vi = 1.5 V
אQאאאא
אאא15 mAאאאIDQאא
אאVLאאאאK0.75VVDQא
WE٤J ١F
VL = Vi - V D = 1.5 V - 0.75 V = 0.75 V
ID, mA
30
אא
25
20
IDQ =15 Q Eא)
10 א
5
0 0.5 1.0 1.5
VD, V
VDQ VL
Vi
E١١J ١F
Diode Resistanceא٦J ١
Static ResistanceRsאא١J ٦J ١
VDאאאאאRsאא
אאאIDאאא
WאאאאKאא
VD
RS = E٥J ١F
ID
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אא ١٤٦ א
אא
אא אאאא
Kאא
Dynamic Resistancerdאא٢J ٦J ١
א אאאא
WאQאא
∆VD
rd = |Q point E٦J ١F
∆I D
א،אאא
Kאאאאא
The Diode Equivalent Circuit אאא٧J ١
אא،אאא
אאאא
אא
אא KE١٢J ١F
אא VBאאאאא
אא،אאאא،
אאא،Rf(forward resistance)אא
KE١٢J ١Fאא
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אא ١٤٦ א
אא
ID, mA
A A
VB
Rr
Rf
K K 0 VB
VD, V
EF EF E F
אאאאאאאE١٢J ١F
אאאא
אאRrא
J ١Fאאאא،(Reverse resistance)
KE١٢
The Ideal Diodeאא •
J אאE١٣J ١FKא
IDאאK
אאא
IDאK VDאאאאא
،VDאאאאא
Rf = 0אא(short-circuit)אאא
א(open-circuit)אא، EE١٣J ١FFVB = 0
KEE١٣J ١FFRr = ∞א
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אא ١٤٦ א
אא
ID, mA
A A
K K 0 VB VD, V
EF EF E F
KאאאאאJ אאE١٣J ١F
Geא Siא٨J ١
Comparison between Silicon and Germanium Diodes
KאאאE١J ١F
א א א
0.3 V 0.7 V אא
20 V 50 V אא
10oC 20oC א
אאאאא אאאאא א
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אא ١٤٦ א
אא
אא
؟אאאא١J ١
Wאאא٢J ١
Kאא K١
Kא K٢
Kא K٣
Kאאאאאאא٣J ١
Wאאא٤J ١
אאאא K١
K אEF
K אEF
Kא אEF
אאא K٢
אא EF
אא EF
אאאא EF
אאא K٣
Kא EF
Kא EF
K EF
؟אאא٤J ١
Kאאאאאאאא٥J ١
؟אא٦J ١
KאאJ א٧J ١
Kאאאא٨J ١
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אאאא אא
אאא
Wאא
Kאאאא •
Kאאאא •
Kאאא •
Kאא •
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אא ١٤٦ א
אאאא אא
Introduction ١J ٢
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אאאאאאאאא א
Kאאא
،אאאאא
،אאאאאא
K
K
א אא
א
א،אאאE٢J ٢F
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אא ١٤٦ א
אאאא אא
Vi RL
אE٢J ٢F
+
I
Vi + Vo
0 t1 RL 0
t0 t2 t0 t1 t
2
KאאאאE٢J ٢F
+
I=0A
Vi Vo
RL
t2t2
0 t0 t1 t2 0
t0 t1
+
KאאאאE٢J ٢F
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אא ١٤٦ א
אאאא אא
Vo
0
t0 t1 t2
KאאאE٢J ٢F
K אא E٢J ٢)
אאאאא
אאא،
KאאאE٢J ٢FKE٢J ٢F
אאאא١J ٣J ٢
Average Value of the Half-Wave Output Voltage
א
אאאאאאא
אאא ،(dc voltmeter)א
(peak value)אאKE٣J ٢F،2π
א א(average value)אאVPo א
WאVave
VPo
Vave =
π E١J ٢F
Vpo
Vave
Area
0
2π
KאאאאE٣J ٢F
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אא ١٤٦ א
אאאא אא
W١J ٢
KE٤J ٢Fאא(Vave)אא
50V
0V
E٤J ٢F
Wא
VPo 50
Vave = = = 15.9V
π 3.14
אאא٢J ٣J ٢
Effect of the Barrier Potential on the Half-Wave Rectifier Output
،אאאאא
،אא אאאאא
אאא אאא
אאא VPoאאאא
אאא،E٥J ٢F ،אאאVPi
-:א E0.7V =אאFאאאאא
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אא ١٤٦ א
אאאא אא
0 .7 V
Vpi + VPo = Vpi – 0.7V
+ +
t2
RL Vo
0 t0 t1 t2 0 t0
_ t1
אאE٥J ٢F
א
W٢J ٢
.E٦J ٢Fאאאא
20V
RL
=1kΩ
Vo
Vi 0
-20V
()
5V
RL
Vo
Vi 0 =1kΩ
-5V
EF
E٦J ٢F
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אא ١٤٦ א
אאאא אא
Wא
WEFאאאא
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אא ١٤٦ א
אאאא אא
-VPi
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אא ١٤٦ א
אאאא אא
N1 N2
Vi V1 V2 RL
KאE٩J ٢F
،אאאאאא
אאאא אאא
Wאאאאאאאא
N
V2 = 2 V1
N1 E٤J ٢F
-:
אאא= N1
אא= N2
אאאא=V1
אאא=V2
אאאE٤J ٢Fא
אא אאאEN2 > N1Fאא
אאאאאאא،EV2 > V1Fאא
N1 F
KEV2< V1FאאאאאאאאEN2 <
אאE N2 ZN1 Fאאאא
KE V2Z V1F
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אא ١٤٦ א
אאאא אא
אאאאאא
אאVP2 אאאא VPoא
W،VB
:٣J ٢
KE١٠J ٢Fאאאאא
3 :1
150V
Vi 0 V1 V2 RL
Vo
220Ω
E١٠J ٢F
Wא
WVP1אאאאא
N 1
VP 2 = 2 VP1 = × 150 = 50V
N1 3
W VPoאאא
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אא ١٤٦ א
אאאא אא
Full-Wave Rectifiersאאא٤J ٢
אאאאאא
אאאא،אא אאא
א אאאאא
،אאאאא
،א אא
א
KE١١J ٢Fאא
אאאאא
،אאאאאא
אאאא(Vave)אאא
Wאא
2VPo
Vave = E٦J ٢F
π
W٤J ٢
KE١٢J ٢Fאא(Vave)אא
15V
0V
E١٢J ٢F
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אא ١٤٦ א
אאאא אא
Wא
2VP 2(15V )
Vave = = = 9.55V
π 3.14
١J ٤J ٢
The Full-Wave Center-Tapped Rectifier
N1 N2 D1
V2
2
Vin
V2 RL
2
D2
K א E١٣J ٢)
אאאאאאא
אאא אE١٤J ٢F
אאD1א،א
D2
KאD1אאאא
אאאא אאא
אאאא
אאD1אE١٤J ٢Fא
KD2אאאאD2
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אא ١٤٦ א
אאאא אא
D1
N1 N2 + -
+
I
Vo
Vi
0 + 0
+
RL
- +
D2
Kאאאא E١٤J ٢F
D1
N1 N2 - +
Vi Vo
0 + 0
to t1 t2 to t1 t2
+
I RL
+
+ -
D2
KאאאאE١٤J ٢F
אא E١٤J ٢)
אאא אאאאא
KE١٥J ٢Fאאא
VPo =(VP2/2)-0.7V
Vo
0 t0 t1 t2
KאאאאאE١٥J ٢F
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אא ١٤٦ א
אאאא אא
V2
Vo = - VB
2 E٧J ٢F
E١٦J ٢FאאאWאאא
، אD2
אאD1א
אאאאאD2 (PIV) אאא
Kאא
+(VP2/2) +(VP2/2)-
VB
+ + -
V1
+ V2
+
D2 RL
- + -
(VP2/2) +(VP2/2)-VB -
VP2 -VB
KאאאE١٦J ٢F
אא(VP2/2)J VBD2אא א
א(PIV)אאא،-VP2/2א
Wא
V V
PIV = P 2 − V B - − P 2
2 2
= VP2 -VB
Vp2
QVPo = - VB
2
∴VP 2 = 2 VPo + 2 VB
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אא ١٤٦ א
אאאא אא
Wאאאא
V2
200V
2
Vin 0V V2 V2
-200V V2
RL=1kΩ
2
D2
E١٧J ٢F
Wא
W(VP2)אאא אK١
N2 1
VP 2 = VP1 = × 200 = 50V
N1 4
W(VP2/2)אאא אK٢
(VP2/2) = 25V
VPo = (VP2/2)-0.7V= 25-0.7=24.3V
Vo
0
Wאאא K٣
PIV = 2 VPo + VB = (2 × 24.3) + 0.7 = 49.3V
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אא ١٤٦ א
אאאא אא
0 0
t0 t1 t2 t0 t1 t2
D2 +
D4
RL Vo
-
Kאאאא E١٨J ٢)
N1 N2
I D1
V D3 Vo
0 0
t0 t1 t2 t0 t1 t2
D2 +
RL Vo
D4
-
+ +
KאאאאE١٨J ٢F
Kאא E١٨J ٢ F
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אא ١٤٦ א
אאאא אא
Vo = V2 − 2VB E٩J ٢F
W
Kאא VB = 0אאVB = 0.7V
אאWאאא
K
אD4,D3
א אD1 , D2
(PIV)
אאD4אD3 אאא
،E١٩J ٢F אאאאא
אאא(PIV)אאא
Wא
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אא ١٤٦ א
אאאא אא
:(6-2)
אאE٢٠J ٢Fאאאאא
Kאאא
D3 D1
110 V rms 12V rms
+
D4 RL Vo
D2 -
E٢٠J ٢F
Wא
W(VP2)אאאא
VP 2 = 2 Vrms = 1.414 × 12V ≅ 17V
W(VPo)אאא
VPo = VP 2 − 2VB = 17 V − (2 × 0.7 V) = 15.6V
W(PIV)אאא
Vi Vo
0V 0V 0
KאאאE٢١J ٢F
Capacitor Filterאאאא ١J ٥J ٢
K
אאE٢٢J ٢F
אאאאאאאא
אאאאאא،א
אאאאאאא
KE٢٢J ٢FEאא0.7VFא
אאאאא
،אא،אאא
אאE٢٢J ٢F
،RLאC
א
א(The time constant)
אאאאא
אאאאא،אא
א،אאאא
אאאאא
KE٢٢J ٢F
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אא ١٤٦ א
אאאא אא
+
Vi I VPi – 0.7V
+ + +
0 VC RL
t0
t1 t2
0 t1 t2
t0
Kאאאא א אE٢٢J ٢F
+
Vi
I
+
0 t
+
0 t1 t2 VC RL
+ 0
t0 t1
Kאא E٢٢J ٢F
Vi > VC +
I +
+ +
0
t0 t1 t2 VC RL
0
t0 t1 t2
KאאאאE٢٢J ٢F
KאאE٢٢J ٢F
(ripple voltage)א אא אא
אאאאא
KE٢٣J ٢Fאא
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אא ١٤٦ א
אאאא אא
KאאאאאE٢٣J ٢F
אאאאE٢٣J ٢F
Kא
א(ffw)אאאא
אא ،E٢٤J ٢F،א (fhw)א
אאאאא
א،אאא
אאאאאא
Kאאאא
אאאאE٢٥J ٢F
Kאאאאא
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אא ١٤٦ א
אאאא אא
א
EאF
0
KאאאEF
0
KאאאאEF
אאאאE٢٥J ٢)
Kאא
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אא ١٤٦ א
אאאא אא
Vr ( PP )
r= E١١J ٢F
VDC
-:
א=r
אאא=Vr(PP)
EאאאFאא=VDC
אא
א E١١J ٢Fא
Kאאא
VDCאאאVr(PP) אאא
Wאא
1
Vr ( PP ) = VP ( rect )
fR
L C
E١٢J ٢F
1
VDC = 1 − VP ( rect ) E١٣J ٢F
2 fRL C
-:
(Hz)אא = f
(Ω)א=RL
(F)אZC
(V)אאאא= VP(rect)
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אא ١٤٦ א
אאאא אא
W٧J ٢
KE٢٧J ٢Fאאא
Wא
WVP1אאאאא
VP1 = 2Vrms = (1.414)(15)V = 163V
10 : 1
D3 D1
115 V rms
60 Hz VP1 VP2
C RL
D4 50µF 2.2K Ω
E٢٧J ٢F
WVP2אאאא
N2 1
VP 2 = VP1 = 163V = 16.3V
N1 10
WאVP(rect)אאאא
VP ( rect ) = VP 2 − 1.4V = 16.3V - 1.4V = 14.9V
א،א אאא
WאVr(PP)אאאא
1 1
Vr ( PP ) = VP ( rect ) = 14.9V = 1.13V
fRL C (120Hz)(2.2KΩ)(50µF)
WאVDCאאאא
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אא ١٤٦ א
אאאא אא
1 1
VDC = 1 − VP ( rect ) = 1 − 14.9V = 14.3V
2 fRL C 2(120Hz)(2.2KΩ)(50µF)
Wא
Vr ( PP ) 1.13V
r = = = 0.079
VDC 14.3V
7.9%Kא
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אא ١٤٦ א
אאאא אא
אא
Kאאאאאאא١J ٢
Kאאאא٢J ٢
.אE٢٨J ٢Fאאאאא٣J ٢
10V
RL Vo
Vi 0 47Ω
-10V
()
5V
RL Vo
Vi 0 47Ω
-5V
EF
E٢٨J ٢F
E٢٨J ٢Fאאאאאאא٤J ٢
E٢٩J ٢Fאאאאאאא٥J ٢
2:1
115 V rms RL
100Ω
E٢٩J ٢F
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אא ١٤٦ א
אאאא אא
WE٣٠J ٢Fאא٦J ٢
אאE١F
KאאאאE٢F
KאאאאE٣F
.RLאאE٤F
KאאאE٥F
K(PIV)אאאE٦F
D1
4:1
110V rms
RL=1kΩ
D2
E٣٠J ٢F
א،20Vאא(rms)אאא١١J ٢
Kא(PIV)אא
KE٣١J ٢Fאאא١٢J ٢
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אא ١٤٦ א
אאאא אא
5:1 D1
115 V rms
60 Hz
C
50µF RL
2.2K Ω
D2
J ٢F
W،30VE٣٢J ٢Fאאאאאא١٣J ٢
אאאE١F
KאE٢F
4:1
D3
D1
Vin
C RL
D2 D4 50µF 600 Ω
E٣٢J ٢F
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אא ١٤٦ א
אא
אאא
Wאא
Kאאא •
K •
Kאאא •
Kאאא •
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אא ١٤٦ א
אא
Introduction١J ٣
אאאא א
א א א א ،א א
א F א א א
א א ، א א א Eא
،א א אאJ א א אא
א א א א א א
א א א א א (Breakdown Voltage )
Kאאאא
Zener Diode٢J ٣
אאא p-n
אK
אא
pJ nJ אאאאאא
.100W200V 1.8VאKא
אאאא
א(Avalanche Breakdown)אא E5VF
אאאאא
אאאאאאאKאא
אאאJ א
KאאאאאKא
(Zener Breakdown)אא
אאאאE5VF
א
א،אאאאאאא
KאאאאאאJ א
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אא ١٤٦ א
אא
K
ﺣﻬﺪ اﻻﻥﻬﻴﺎر
VR Vz VF
IZK
A
אא EF IR
EFאא EFWE١J ٣F
אאאאא
E FIZKאאא
אאIZKאKKEאFIZM
אאא
א
אאאאא
K
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אא ١٤٦ א
אא
אאIZM
אאא
אאא
Kאאאאאאא
∆VZ
rZ =
∆I Z E١J ٣F
∆VZ
K K VR 0
IF
IZ IZK
rz
+
VZ ∆I Z
-
A A
IZM
אאאEF
אאEF IR
אאאEFKאאאEFWE٢J ٣F
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אא ١٤٦ א
אא
W١J ٣
K٣J ٣אאאאrZא
∆VZ = 50mV
VR 0
IF
IZK
10mA
∆I Z = 2mA
12mA
IZM
IR
٣J ٣
Wא
∆VZ 50mV
rZ = = = 25Ω
∆I Z 2mA
W٢J ٣
VZDאVZ=6.8V،rZ = 5Ωא
.20mAא
Wא
VZD = VZ + IZ rZ
= 6.8 V + 20 mA ×10−3 (A/mA) ×5 Ω = 6.9 V
(ideal zener diode)
אאא EF٤J ٣
אאא(∆VZ = 0)אאא
W
∆V Z 0
rZ = = =0
∆I Z ∆I Z E٢J ٣F
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אא ١٤٦ א
אא
אEF٤J ٣אאא
KVZא
∆VZ = 0
K K 0
VR IF
IZK
+
VZ
∆I Z
A A
IZM
אאאEF
IR
אאEF
KאאאאEFWE٤J ٣F
אאאאEF
Temperature coefficientאא٥J ٣
אאאאVZאאאאא
VZ0.1% / oCאאאVZ = 12 VאK
VZאא.1oCאאא0.012 Vא
Wאא
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אא ١٤٦ א
אא
( وpositive temperature coefficient)TCאאא
، אאאאאVZ
אא VZ
(negativetemperature coefficient)
Kאאא
אאאא אא
אא(mV / Co)אאאא
WאאVZא(% / Co)אאאא
∆VZ = TC ×∆T
W٣J ٣
K0.048% / Coא8.2V
.60 oC
:اﻟﺤﻞ
W60 oC25 oCאאא
WאPZאא
PZ = VZ IZ
PZאאאאVZא א
PZ(max)אאאKIZאאא
Wא (maximum power dissipation of a zener diode)
PZ(max) = VZ IZME٤J ٣F
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אא ١٤٦ א
אא
W٤J ٣
2 mAא20V
אאאא
K20 mA
Wא
PZ(max) = VZ IZM
= (20V)(20mA) = 400mW
אאאא،א
KאIZMIZKIZא
R
It IZ IL
+
Vin DZ RL VL = VZ
-
אאאE٥J ٣F
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אא ١٤٦ א
אא
W٥J ٣
،RL = 200 Ω،R = 20 Ω،VZ = 20V
א،E٦J ٣Fאא
K30 V24Vא rZ = 0
.(IZ(max)IZ(min)) EF
(PZ(max) PR(max)) RאEF
R
It IZ IL
+
Vin = 24 30 V DZ RL VL = VZ
-
E٦J ٣F
Wא
W RL אאאEF
VZ 20V
IL = = = 0.1A
RL 200Ω
WאRאאאא
Vin − VZ
It =
R
VinאIt
אאRVZא
It(max)אVin = 24VIt(min)א
KVin = 30V
24V − 20V
I t (min) = = 0.2A
20Ω
30V − 20V
I t (max) = = 0.5A
20Ω
W
It = IZ + IL
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אא ١٤٦ א
אא
(IZ = IZ(min))אאILאא
KIt(max) (IZ = IZ(max))It(min)
I Z (min) = I t (min) − I L = 0.2A − 0.1A = 0.1A
I Z (max) = I t (max) − I L = 0.5A − 0.1A = 0.4A
WR אEF
PR(max) = It(max)2 R
= (0.5A)2 (20Ω) = 5W
W
PZ(max) = VZ IZ(max)
= (20V)(0.4A) = 8W
אאE٧J ٣F
It IZ IL
+
Vin = 24V DZ RL VL = VZ
-
E٨J ٣F
Wא
Q I t = I ZK + I L (max)
WRL(min)
VZ
RL (min) = = 490Ω
I L (max)
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אא ١٤٦ א
אא
Percent Regulationאא٣J ٧J ٣
אא אא
Kא
אW •
אאא
W∆Vinאא∆Voutאאאא
∆V
Line regulation = out 100%
∆Vin
W٧J ٣
אא0.25Vאא אא
؟א5V
Wא
∆V
100% =
0.25V
Line regulation = out 100% = 5%
∆Vin 5 V
אW •
אאאאא
(full load) אא(no load)אאאאא
Wאא
V − VFL
Load regulation = NL 100%
V FL
J W
אאZVNL
אאאZVNL
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אא ١٤٦ א
אא
W٨J ٣
א12V א،א ،אא
؟א 11.95Vא
Wא
V − VFL
Load regulation = NL 100%
V
FL
12V − 11.95V
= 100% = 0.418%
11.95V
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אא ١٤٦ א
אא
אא
؟אאא١J ٣
Kאאאא٢J ٣
20m אא5.65V5.6Vא٣J ٣
؟،30mA
25oC אא70oC א٤J ٣
.+ 0.04% / oCאאא،6.8 V
E٩J ٣Fאאאאאא٥J ٣
KאאVZ = 14 VIZK = 1.5 mAא
R
+
Vin DZ
E٩J ٣F
،RL = 250 Ω،R = 20 Ω،VZ = 200V
א،E١٠J ٣Fאא٦J ٣
K240 V220VKא rZ = 0
KEF
K אEF
R
+
Vin DZ RL
-
E١٠J ٣F
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אא ١٤٦ א
אא
E١١J ٣F
5Vא0.2Vאאאא٨J ٣
؟א10V
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אאא ١٤٦ א
אא אא
אאא
Wאא
Kאאאאא •
Kאאאאאאא •
Kאאאאאאא •
Kאאא •
Kאאאא •
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אאא ١٤٦ א
אא אא
١-٤ Introduction
K
אאאאאאא
،אאאאאאאאא
אא،،א
Kאא
א
אאאאא
K(Field Effect Transistor)אא(Bipolar Junction Transistor)
אא،אאאאאאא
Wאא
אאא J ١
אאאא J ٢
אאא אJ ٣
אאא אJ ٤
א
א،אאאאא
KEEpitaxial planar structureF אאא
אא
אאא
EBaseFאEEmitterF KE١J ٤F אp-nא
א
J ٤Fאpnpnpnאאא،ECollectorFא
KאאאאאאE١
אJ אאאאpnא
אאאאEBase-Emitter JunctionF
J א
אא،E١J ٤FEBase-Collector JunctionFא
KB א،C،E
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אאא ١٤٦ א
אא אא
אC (Collector)
C
Metalized contacts أ J א
Oxide א
א n
Base-Collector p
Emitter א
אBase p
B B n
اﻟﻤﺠﻤﻊCollector (Base)
nאJ א p
ﻃﺒﻘﺔ أﺳﺎسSubstrate
Base-Emitter
junction
אE (Emitter) E
EF EF
Kאאא אE١J ٤F
אאאא אאאE٢J ٤F
Kpnpאnpn
C C
B B
npn pnp E
E
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אאא ١٤٦ א
אא אא
- + + -
א א א א
+ +
+ - - +
אJ א אJ א J א אJ א
+ - - +
npn pnp
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אאא ١٤٦ א
אא אא
אאאאאאאא J ٦
Kאאאאאא
אאאאאא J ٧
KE٤J ٤Fא
אא אא
J א J א
(p)א אא
(n)א (n)
BE junction BC junction
Depletion region Depletion region
J א
J א
א
א
א
א
א
א א
KאאאE٤J ٤F
Wאאא
א،pnpnpnאאאאא E٥J ٤F
אאאאאאאאא
Kא
WICאIBאIEאא
I E = IC + I B E١J ٤F
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אאא ١٤٦ א
אא אא
אאאאא
Kאא
_ _
+ +
IE IC IE IC
IB IB
+ _ _ +
npn pnp
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אאא ١٤٦ א
אא אא
Wאאא
I E = IC + I B
WIC אא
IE I
=1+ B J ٤F
IC IC
E٤
WαdcβdcE٤J ٤FE٣J ٤FE٢J ٤Fא
α dc
β dc = E٥J ٤F
1 - α dc
אאאאא αdcאאאא
Kβdc
IC IC
RC RC
RB VCC RB VCC
IB VBB IB
VBB
IE IE
אnpn E٦J ٤F אpnpE٦J ٤F
אאא E٦J ٤F
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אאא ١٤٦ א
אא אא
W١J ٤
KIC = 3.65mAIB = 50µAאαdcIEβdc
Wא
I C 3.65 mA
βdc = = = 7.3
IB 50 µA
I E = I C + I B = 3.65mA + 50 µA = 3.70mA
IC 3.65 mA
α dc = = = 0.986
IE 3.70 mA
Current and Voltage Analysisאא٣J ٤J ٤
א،אא אאאאא
E٧J ٤F אאאא
Wא
KאאWIB •
KאאWIE •
KאאWIC •
KאאאאWVBE •
KאאאאWVCB •
KאאאאWVCE •
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אאא ١٤٦ א
אא אא
IC
RC
RB VCB VCC
VCE
IB
VBB VBE
IE
KאאאE٧J ٤F
אאVBBאא–אאא
אא–א،VCCאאJ א
אאאא א
WEBarrier PotentialFא
VBE = 0.7 V E٦J ٤F
א
KRBאאאאאא
VR = VBB - VBE = I B RB
B
WIBאא
VBB - VBE
IB = (٧ J ٤F
RB
WRCאאאא
VR = IC RC
C
Wאאאאא
VCE = VCC - IC RC J ٤F
E٨
Wא
IC = βdc I B
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אאא ١٤٦ א
אא אא
Wא–אאאא
VCB = VCE - V BE E٩J ٤F
W٢J ٤
E٨J ٤FאאאVCBVCEVBEIEICIB
.150אβdcא
RC = 100Ω
RB = 10KΩ VCC = 10V
VBB = 5 V
J ٤F Wא
WIEICIBאא
WאאVCBVCE
VCE = VCC - I C RC = 10V - (64.5mA)(100Ω) = 10V - 6.45V = 3.55 V
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אאא ١٤٦ א
אא אא
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אאא ١٤٦ א
אא אא
IC
C
B
A
VCE(max)
VCE
0
0.7V
א אאא
א
KIBאVCEICEF
אאאאאE٩J ٤F
אאאJ א א،0.7VאVCEאא •
IC אאאאא،
.VCEאאאאIBאא
אאאאICאאא •
Kאא
אא
אא •
CאBאאICאβdcא
KIC = βdc IBאβdc
J אאא،VCEאא •
אאאא،אא
אאא،CאE٩J ٤F
EBreakdown regionF
E١٠J ٤F אאאא •
Kא
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אאא ١٤٦ א
אא אא
אאאאא •
E١٠J ٤FאאאאECutoff regionFא
IC
I B5
I B4
I B3
I B2
IB1
IB = 0.0
VCE
0
(Cutoff region) א
KאאאE١٠J ٤F
W٣J ٤
E١١J ٤F אאא א
100βdcא 5µA25µA5µAIBא
KאVCEא
IC
RC
RB VCC
IB βdc = 100
VBB
IE
E١١J ٤F
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אאא ١٤٦ א
אא אא
Wא
Wאאאאא
I C = β dc I B
א אאIBא
WE١J ٤F
IB IC
5µА 0.5mA
10µА 1.0mA
15µА 1.5mA
20µА 2.0mA
25µА 2.5mA
E١J ٤F
WE١٢J ٤FאאE١J ٤Fא
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אאא ١٤٦ א
אא אא
IC(mA)
2.5 IB = 25 µA
2.0 IB = 20 µA
1.5 IB = 15 µA
1.0 IB = 10 µA
0.5 IB = 5 µA
VCE(V)
0.0 0.7
Transistor Operation Regionsאא٥J ٤J ٤
אאאאא،אא
אאא
Cutoff regionא١J ٥J ٤J ٤
אאאאIBא
،E١٢J ٤F אא
א–אאJ א אKVCE = VCC
Kא
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אאא ١٤٦ א
אא אא
RC
+ VCC
RB
VCE = VCC
IB = 0
-
IC
RC
RB VCC
VCE
IB VCE = VCC – IC RC
VBB
IE
אאE١٣J ٤F
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אאא ١٤٦ א
אא אא
DC Load Lineאא٣J ٥J ٤J ٤
אאאאאא
אאאאE١٤J ٤F אKא
אאאאאאא
אאאא، EIC = 0 and VCE = VCCFא
אאא،EIC =IC(sat) and VCE =VCE(sat)Fאאאא
Kאאאאאא
IC Saturation
IC (sat)
IB = 0.0
VCE(sat) VCE
VCE = VCC
RC = 1KΩ
VCC = 10V
RB =10KΩ
VBB = 3V
βdc = 50
E١٥J ٤F
WIBא
VBB - VBE 3V - 0.7V 2.3V
IB = = = = 0.23mA
RB 10KΩ 10KΩ
WIBאאICא
I C = β dc I B = (50)(0.23mA) = 11.5mA
א βdcאאאאאא
Kא11.5mAא
אאאβdcא٦J ٣J ٤
Relationship between βdc, Collector current and Temperature
אאאאאβdcאא
KE١٦J ٤Fאאא
،אאא βdc אE١٦J ٤F
אאאאאא
אאאא،
Kאא
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אאא ١٤٦ א
אא אא
70
Tj = 125oC
Tj = 75oC
50
Tj = -15oC
30
βdc
20
Tj = -55oC
10
7
1 2 10 20 100 200
אאβdcE١٦J ٤F
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אאא ١٤٦ א
אא אא
אאא
Kאאא J ١
Kאאאאאא J ٢
Kאאאא J ٣
א–אאאJ אא J ٤
؟
؟אאאא J ٥
؟אא J ٦
؟אאא J ٧
؟א10µAא1mAאא J ٨
א50µAאא βdc=200א J ٩
؟αdcא
Kαdcβdc J ١٢
Kαdcβdc100אאאא J ١٣
؟אאאאא J ١٤
؟אאאβdcא J ١٥
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אא ١٤٦ א
אא אא
אאא
Wאא
Kאאאא •
Kאאאאאא •
Kאאאא •
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אא ١٤٦ א
אא אא
Introduction ١J ٥
אאאאאאא
אאא K
אאא
،אאאאא
K אאא–אאאאאJ אא
אאאאאא
W
Kאאאאא• א
אא،אא• א
Kאא
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אא ١٤٦ א
אא אא
RC
RB
VCC
Vin
VBB
אאא אE١J ٥F
אאאאאא
180ºאאא RCא א
KE٢J ٥Fאאא
Vin
VBB
Vc
VCC
אאE٢J ٥F
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אא ١٤٦ א
אא אא
AC Equivalent Circuitאאאא• א
،אאאאאא
אאE٣J ٥F אאאאא
KאVBB, VCC
אאאאאאא–א
Wאאr'eאא
Vb
Ie = E١J ٥F
re'
WRCאאאאאVcאא
Vc = I c RC E٢J ٥F
WאאIcאIe א
Vc ≅ I e RC E٣J ٥F
RC
RB
r'e Vc VCC
Vin Vb
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אא ١٤٦ א
אא אא
Vc I e RC
Av = ≅ E٥J ٥F
Vb I e re′
W
RC
Av = E٦J ٥F
re′
E١J ٥F אאאאE٦J ٥Fא
RCא،r'eאאאRCא
Kאאא،r'eא
W١J ٥
אאאאE٤J ٥F אא א
Kr'e = 50Ω
Wא
Wאא
RC 1KΩ
Av ≅ = = 20
re′ 50Ω
Wאא
Vout = AvVb = (20)(100mV) = 2V rms
RC
RB
r'e Vc VCC
Vin Vb
E٤J ٥F
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אא ١٤٦ א
אא אא
RC IC(sat) RC IC(sat) RC IC = 0 RC
RB C RB C
+VBB + 0V
IB E IB = 0 E
J אEF–אEF
Kא אE٥J ٥F
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אא ١٤٦ א
אא אא
Conditions in Cutoffא •
–אא אאא
VCEאאאאא،אא
KVCCא
VCE (cutoff ) = VCC E٢J ٥F
Conditions in Saturationא •
J אאאאאאא
،אאאא
Wאא
VCC - VCE(sat)
I C ( sat ) = E٣J ٥F
RC
KאVCCאאVCE(sat)א
Wאאאאאא
I C(sat)
I B (min) = E٣J ٥F
βdc
KIB(min)IBאא
W٢J ٥
؟VIN = 0 VCE ،E٦J ٥FאאאאEF
βdc = 200 אאא IBאאEF
؟VCE(sat)
KVIN = 5VRBאEF
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אא ١٤٦ א
אא אא
VCC = 10V
RC = 1kΩ
RB
VIN
E٦J ٥F
Wא
אא אVIN = 0V EF
W
VCE = VCC = 10V
אVCE(sat) E
F
VCC 10V
I C ( sat ) = = = 10mA
RC 1KΩ
I C ( sat ) 10mA
I B (min) = = = 50µA
β dc 200
W50µARBEF
VR = VIN − VBE = 5V − 0.7 V = 4.3V
B
VR 4.3V
RB (max) = B
= = 86kΩ
I B (min) 50µA
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אא ١٤٦ א
אא אא
אא
؟א١J ٥
؟א٢J ٥
Kא٣J ٥
250mV 5V rmsאא٤J ٥
؟rms
RC = 1200ΩאKr'e = 20ΩאE٤J ٥Fאאא٥J ٥
Kא
؟א،אא٦J ٥
؟א٧J ٥
KVCE = VCC٨J ٥
؟אא٩J ٥
؟ VCE ١٠J ٥
Wאא١١J ٥
אEF–EFJ EFJ EF
א
Wא100mVא5V (rmsFאאא١٢J ٥
100EF50EF500EF5EF
Wאאאא ١٣J ٥
EF EFEFEF
WVCEאא١٤J ٥
EF EF VCCEF 0VEF
EFEFאEFEFEFאEF
WVCEאא١٥J ٥
EF EF VCCEF 0.7VEF
Wאאא ١٦J ٥
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אא ١٤٦ א
אא אא
RC = 10kΩ RC = 102kΩ
RB =1MΩ RB
VIN VIN
אאא
Wאא
Kאאא •
Kאא •
Kאאאא •
Kאאאאאא •
Kאאאאאא •
אא،אאאא •
Kאא
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אא ١٤٦ א
אא אא
Introduction ١J ٦
אאאאאא
K אאאאאאאא
אאאאאאא
KKאאאאאKא
DC Operating Pointאאא٢J ٦
،אאא
א،VCEאICאאאאא
אאK אאאאאאא
.Qא
DC Load Line אא •
אאאE١J ٦Fאאאא
KE١J ٦F
IC, mA
IB6 IC
IB5 RC
IB4
RB VCC
IB3
VCE
IB2 IB
VBB
IB1
IE
VCE, V
EFEאF
KאאאאE١J ٦F
WאאאJ אא
VCC = IC RC + VCE E١J ٦F
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אא ١٤٦ א
אא אא
WIC = 0אVCEא
VCE = VCC E٣J ٦F
אא،אאא
VBBאKVBBאאIBא
KE٢J ٦Fא،IB3אIBא
IC, mA
אא
IB6
VCC /RC
IB5
IB4
ICQ
Q EאF IB3
IB2
IB1
VCEQ VCC VCE, V
אאE٢J ٦F
IBאVBBאאאאא
،אאא
א،אאאאאאא
אKא
Kאאאאאא
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אא ١٤٦ א
אא אא
WE١J ٦F
Kβdc = 200E٣J ٦Fאא
Wא
WאאKVCE،ICא
RC
330Ω
VCC
RB 20V
47kΩ
VBB
10V
J ٦F
VBB − VBE 10V − 0.7 V
QIB = = = 198µA
RB 47 kΩ
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אא ١٤٦ א
אא אא
אא،אא
W
אאKE٤J ٦F،(line termination circle)
WאVCC – VBERBאאא
VCC − VBE
IB = E٢J ٦F
RB
Wא،E٤J ٦Fאא
VCC − I C RC − VCE = 0
WVCEא
VCE = VCC − I C RC E٣J ٦F
W IC = βdc IBIBאE٢J ٦Fאא
V − VBE
I C = β dc CC E٤J ٦F
RB
+VCC
IC RC IC RC
+
IB IB VCC
+
RB RB
VBE
EF EF
Kא אE٤J ٦F
Effect of βdc on the Q-point (Q)אβdc •
βdc،βdcאICאE٤J ٦Fא
Kאא،VCE،IC
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אא ١٤٦ א
אא אא
אβdc،אאא βdcא
אאאאא،Kאא
βdcאאא،א
. βdcאאאא
WE٢J ٦F
25ºCאא،E٥J ٦F
אאאא
א،75ºCא150،25ºCאβdc = 100אK75ºC
،VBEאK אאא(IC , VCE)אא
Kא
VCC =12 V
RC
560Ω
RB
100KΩ
E٥J ٦F
Wא
W IC , VCE ،25ºCא
V − VBE 12V − 0.7 V
I C = β dc CC = 100 = 11.3mA
RB 100 KΩ
VCE = VCC − I C RC = 12V − (11.3mA )(560Ω ) = 5.67 V
WICאאא
I C ( 75 ) − I C ( 25
Ο Ο
)
%∆I C = × 100%
I C ( 25 Ο
)
17mA − 11.3mA
= × 100% ≅ 50% EF
11.3mA
W VCEאאאKβdcאICא
VCE (75 ) − VCE ( 25
Ο Ο
)
%∆VCE = × 100%
VCE ( 25 Ο
)
2.48 V − 5.67V
= × 100% ≅ −56.3% EאF
5.67V
Emitter Biasאא٤J ٦
אאאא
אJ אVEEא،אאKE٦J ٦F
K אא
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אא ١٤٦ א
אא אא
+VCC +VCC
IC RC RC
RB RB
+
+
IB VBE VC
+ VB
IE RE RE VE
VEE -VEE
+
E F
EF
Kא אE٦J ٦F
אאאאJ אא
W،אE٦J ٦FאאE٦J ٦F
VEE + I B RB + VBE + I E RE = 0
WVEEאא
I B RB + I E RE + VBE = −VEE
W
I C ≅ I E
W
I C = β dc I B
IE
∴IB ≅
β dc
WIB
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אא ١٤٦ א
אא אא
IE
RB + I E RE + VBE = −VEE
β
dc
R
∴ I E B + RE + VBE = −VEE
β dc
− VEE − VBE
∴IE = E٥J ٦F
RE + (RB / β dc )
W
IC ≅ I E
− VEE − VBE
∴ IC ≅ E٦J ٦F
RE + (RB / β dc )
Wא
VE = VEE + I E RE E٧J ٦F
Wא
VB = VE + VBE E٨J ٦F
Wא
VC = VCC − I C RC E٩J ٦F
W IE ≅ IC אאVCVE
VCE = VCC − I C RC − (VEE + I E RE )
≅ VCC − VEE − I C (RC + RE )
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אא ١٤٦ א
אא אא
WE٣J ٦F
אE٧J ٦FאאVCEאIE،ICא
KVBE = 0.7Vאβdc = 100
+VCC = +10V
RC
1KΩ
RB
47KΩ
RE
4.7KΩ
-VEE =-10 V
E٧J ٦F
Wא
WIEא
− VEE − VBE − (− 10V ) − 0.7 V 9.3V
∴IE = = = = 1.8mA
RE + (RB / β dc ) 4.7 KΩ + (47KΩ / 100 ) 5.17KΩ
W
∴ I C ≅ I E = 1.8mA
WVCEא
∴VCE ≅ VCC − VEE − I C (RC + RE )
≅ 10V − (− 10V ) − 1.8mA(5.7 KΩ ) = 9.74V
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אא ١٤٦ א
אא אא
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אא ١٤٦ א
אא אא
+VCC +VCC
R1 R1
אא
Aِ Aِ
R2 RIN(base) R2
EF EF
Kאא E٩J ٦F
Input Resistance at the Base אא •
אאא،אאא
אאאאIINא،אאVINאKE١٠J ٦F
K
+VCC
RC
560Ω
VCC
RE
1KΩ
Kאאא אE١٠J ٦F
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אא ١٤٦ א
אא אא
Wא
VIN
RIN(base) =
I IN
WאJ אא
VIN = VBE + IE RE
Wאא،VBE << IE RE
VIN ≅ I E RE
W
VIN β dc I B RE
RIN(base) = ≅
I IN IB
WIBא
RIN(base) ≅ β dc RE E١٠J ٦F
WE٤J ٦F
Kβdc = 125אE١٠J ٦Fאאאאא
Wא
RIN(base) ≅ β dc RE = (125)(1KΩ ) = 125KΩ
Analysis of a Voltage-Divider Bias Circuitאאא •
אאKE١١J ٦Fnpnאאאא
Wאאאאאא
RIN(base) ≅ β dc RE
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אא ١٤٦ א
אא אא
+VCC +VCC
R1 R1 RC
VBِ βdcِ
R2 βdc RE R2 RE
EF E
F
Knpnאאאא E١١J ٦F
Wאאאא
R2 // β dc RE
R2אאא(βdc RE)אאאR1אא
KE١١J ٦F
Wא
R2 // β dc RE
VB = VCC
R
1 + ( R2 // β R )
dc E
Wאא،βdc RE >>R2א
R2
VB ≅ VCC E١١J ٦F
R
1 + R2
Wאאא،VBא
VE = VB - VBE E١٢J ٦F
WאIEא
IE = VE / RE E١٣J ٦F
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אא ١٤٦ א
אא אא
W
IC ≅ I E E١٤J ٦F
W
VC = VCC − I C RC E١٥J ٦F
WVCEאVEאVC
VCE = VC − VE
WאICאVCEאא
VCC − I C RC − I E RE − VCE = 0
W IE ≅ IC
VCE ≅ VCC − I C RC − I C RE
∴VCE ≅ VCC − I C (RC + RE ) E١٦J ٦F
WE٥J ٦F
E١٢J ٦FאאאICאVCEא
Kβdc = 100
Wא
Wא
RIN(base) ≅ β dc RE = (100)(560Ω ) = 56KΩ
VCC =10V
R1 RC
10KΩ 1KΩ
R2 RE
560Ω
5.6KΩ
J ٦F
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אא ١٤٦ א
אא אא
KRIN(base)אR2אRIN(base)א
WVBא
R2 5.6KΩ
VB ≅ VCC = 10V = 3.59V
R
1 + R2 15. 6 KΩ
W
VE = VB - VBE = 3.59V - 0.7V = 2.89V
W
IE = VE / RE = 2.89V / 560Ω =5.16mA
Wא
I C ≅ 5.16mA
W
VCE ≅ VCC − I C (RC + RE ) = 10V − 5.16mA(1.56KΩ ) = 1.95V
Transistor ConfigurationsאאEF٦J ٦
אא אאאא
Wאאאאא
(Common-Emitter Configuration)אא •
(Common-Collector Configuration)אא •
(Common-Base Configuration)אא •
Common-Emitter Amplifiersאאא١J ٦J ٦
אאאאאא،E١٣J ٦F
אאאאK
אאC2א،אאC1, C3
،אאאאא
Kאאאא
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אא ١٤٦ א
אא אא
VCC = +12 V
R1 RC
22kΩ 1kΩ C3 Vout
C1
Vin βdc=150
βac=150
RL
R2 RE C2
6.8kΩ 560Ω
אE١٣J ٦F
DC Analysisאאא •
،אK אאא، E١٣J ٦Fא
אאא
אאאאא
KE١٤J ٦F(open)
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אא ١٤٦ א
אא אא
VCC = +12 V
R1 RC
22kΩ 1kΩ
βdc=150
R2 RE
6.8kΩ 560Ω
KאאאאאE١٤J ٦F
Wאאא
RIN(base) ≅ β dc RE = (150)(560Ω ) = 84KΩ
RIN(base)א،R2אRIN(base)א
Wאא
R2 6.8KΩ
VB ≅ VCC = 12V = 2.83V
R
1 + R2 28.8KΩ
W
VE = VB - VBE = 3.59V - 0.7V = 2.89V
W
IE = VE / RE = 2.13V / 560Ω =3.8mA
Wא
I C ≅ 3.8mA
W
VC ≅ VCC − I C RC = 12V − (3.8mA )(1KΩ ) = 8.2V
Wא
VCE = VC − VE = 8.2V − 2.13V = 6.07 V
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אא ١٤٦ א
אא אא
AC Analysisאאא •
אאאאא،אאאא
אאKVCCאאC1, C2, C3א
،אאא
אKE١٥J ٦Fא
KE١٥J ٦Fאאא
RS
RC RC
VS 1kΩ 1kΩ
R1 R2 R1 R2
22kΩ 6.8kΩ 22kΩ 6.8kΩ
EF EF
Kאאאא אE١٥J ٦F
J ٦FE١٦J ٦FאאVbא
WE١٦
Rin (tot )
Vb = Vs
R +R
s in ( tot )
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אא ١٤٦ א
אא אא
RS B RS B
VS VS
Vin
Rin(tot)=R1// R2 // Rin(base) R1 R2 Rin (base)
EF E
F
Kאאאאא E١٦J ٦F
W
Vb = I e re′
W
Ie ≅ Ic
Ie
∴ Ib ≅
β ac
WIbאVbא
Vb I r′
Rin (base ) = = ee
Ib Ie
β ac
WאIeא
Rin (base ) = β ac re′ E١٧J ٦F
Wאא
Rin (tot ) = R1 // R2 // Rin (base) E١٨J ٦F
Output Resistance א •
WKאאאאא
Rout ≅ RC E١٩J ٦F
Voltage Gain of the Common-Emitter Amplifier אאאא •
Wאאאא
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אא ١٤٦ א
אא אא
Vout Vc
Av = =
Vin Vb
W
KאאאVc
KאאאVb
WVb = Ie r'e Vc = αacIeRC ≅ IeRC
I e RC
Av =
I e re′
WאIe
RC
Av = E٢٠J ٦F
re′
Current Gain א •
.βac(Ic/Ib)אאא
אא،
Wאא
Ic
Ai = E٢١J ٦F
Is
א אא،אאאIsא
،(R1//R2)אאאאאא
אאא
Wא
Vs
Is =
Rin (tot ) + Rs
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אא ١٤٦ א
אא אא
(Common-Collector Amplifiers)אאא٢J ٦J ٦
א،(emitter follower) א
אאא
אאK
אא،א
،אאK(1)אא אא
K
א،E١٧J ٦Fאאא
KC2אא،C1א
+VCC
R1
C1
Vin
C2
Iin Vout
R2 RE RL
KאאאE١٧J ٦F
Voltage Gain א •
אKAv = Vo/Vinא،אאא
W،(capacitance reactance)א
Vout = I e Re
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אא ١٤٦ א
אא אא
Vin = I e (re′ + Re )
Wא
I e Re
Av =
I e (re′ + Re )
WאIe
Re
Av = J ٦F
(re′ + Re )
E٢٢
KRe = RE،RE, RLא
אאReא
W،Re >> r'eאK(1)אא
Av ≅ 1
Input Resistanceא •
(Buffer)א،א אא
Kאא
אאאאא אא
WKא
Vin Vb I e (re′ + Re )
Rin (base ) = = =
I in I b Ib
W
I e ≅ I c = β ac I b
W
β ac I b (re′ + Re )
Rin (base ) =
Ib
WאIbא
Rin (base) ≅ β ac (re′ + Re ) E٢٣J ٦F
Wא،Re >> r'eא
Rin (base ) ≅ β ac Re
Wאא
Rin (tot ) = R1 // R2 // Rin (base) E٢٤J ٦F
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אא ١٤٦ א
אא אא
Output Resistanceא •
Wאאא،
R
Rout ≅ s // RE E٢٥J ٦F
β ac
Current Gain א •
IinאK(Ie/Iin)אאאא
Wא
Vin
I in =
Rin (tot )
Rin(base)אR1, R2אאאאאא
א
K אא
WאKIc/Ibאβacאא
R1 // R2 >> β ac Re
W
Ai ≅ β ac
W
Ie
Ai = E٢٦J ٦F
I in
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אא ١٤٦ א
אא אא
(Common-Base Amplifiers)אאא٣J ٦J ٦
،אאאאאאE١٨J ٦F
C3אאא ،C1אא
Kא
+VCC
R1 RC
C3 Vout
C2
C1 RL
Vin
R2 RE
אאE١٨J ٦F
Voltage Gain א •
Wאאאא
Vout Vc I c RC I e RC RC
Av = = = ≅ =
Vin Ve I e (re′ // RE ) I e (re′ // RE ) (re′ // RE )
Output Resistanceא •
،RCאאאr'cאא
אא
Wאא
Rout ≅ RC E٢٩J ٦F
Current Gain א •
Ieא،אIcאK אאא
W.(1)א،Ic ≈ IeKאא
Ai ≅ 1 E٣٠J ٦F
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אא ١٤٦ א
אא אא
אא
Wאא J ١
KEFKאEF
KEFKβEF
Wאאאא J ٢
.REβdcEF.REEF.RBEFKβdcEF
VB = א،אאא npnאאאJ ٣
Wאא295V
0.7VEF 3.65V EF 2.95VEF2.25VEF
אא אאאאאJ ٤
KE١٩J ٦Fאא
RC
10kΩ
VCC
RB 20V
1MΩ
VBB
10V
E١٩J ٦F
אאאא VCEאICא IBאאJ ٥
Wאאא
βdc = 90, VCC =12V, RB = 22kΩ, and RC =100Ω
،אאאא א βdcאא J ٦
؟א
70ºC0ºCאאE٢٠J ٦FאאאאאJ ٧
،0ºCאא50%אβdc،
75%א
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אא ١٤٦ א
אא אא
א IC אאא.25ºCאא110אא70ºCאא
K70ºC0ºCאאאVCE
VCC =+9 V
RC
100Ω
RB
15KΩ
E٢٠J ٦F
KE٢١J ٦Fאאאאאא J ٨
KVBEאאא
VCC = +9 V
R1 RC
47kΩ 2.2kΩ
βDC=110
R2 RE
15kΩ 1kΩ
J ٦F
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אא ١٤٦ א
אא אא
، 3mAאאאאאא J ٩
Wr'eאא
0.33kΩEF 833ΩEF3ΩEF3kΩEF
.βdc =150א،r'e = 10ΩאRE = 100Ωא،אאאJ ١٠
Wאאא
16.5kΩEF 110ΩEF15kΩEF1500ΩEF
WאאאאאJ ١١
אאאEFאEFאEF
KאאאEF
Rin(base) = 68kΩאא،אאאאאJ ١٢
WאאKR2 = 15kΩאR1 = 33kΩא
12.3kΩEF 22.2kΩEF8.95kΩEF68kΩEF
RC = אא.10kΩא אאאJ ١٣
Wא،r'e = 10Ωא،2.2kΩ
180EF 10EF1000EF220EF
E٢٢J ٦FאאאאאאJ ١٤
AvEFRin(tot)EFRin(base)EF
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אא ١٤٦ א
אא אא
VCC = +15 V
R1 RC
2.2kΩ C2 = 1µF
22kΩ
Vout
C1= 1µF
Vin βdc=90
βac=70
R2 RE
E٢٢J ٦F
4.7kΩ 1kΩ
א؟E٢٣J ٦FאאאאJ ١٥
؟א
VCC =5.5V
R1
10kΩ
C1 βdc=90
Vin βac=100
10µF
Vout
R2 RE
4.7kΩ 1kΩ
E٢٣J ٦F
אאאא אא
אאאאאJ ١٦
Kאאאא
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אא ١٤٦ א
אא אא
אאא
Wאא
Kאאאאאא •
Kאאא •
K(MOSFET) אאאאאא •
Kאא(MOSFET)אא •
Kאאא(MOSFET)אא •
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אא ١٤٦ א
אא אא
Introduction١J ٧
אאא1952
א1952(Shockley)
א،אא
א1962 אאאאK
אאא
אאאKאאאא
Kאאאאאאאא
Field Effect Transistor (FET) אא٢J ٧
אאאא
אאאאE١J ٧FK
אאאאא
Kא
אאא
Field Effect Transistor
(FET)
אאאאאאאא
Metal OxideSemiconductor Field Effect TransistorJunction Field Effect Transistor
(MOSFET)(JFET)
א(Unipolar transistor)אאאא
אא، (Bipolar transistor)אאא
אא(n-channel)nJ אא(majority carriers)אא
אאאא،(p-channel)pJ א
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אא ١٤٦ א
אא אא
אאאאK(minority carriers)אאאא
Wא
אאאא (thermal stability)אאאאJ ١
Kאא
KאאאאJ ٢
KJ ٣
KאאאאJ ٤
א،אאאאאJ ٥
Kאאאאא
Kאאא(efficiency)J ٦
Kאא א (active load)אJ ٧
אאאאאא
Kאא(gain bandwidth product)
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אא ١٤٦ א
אא אא
אאאאWDrain(D)• א
(D)אKIDא(Drain current)א
Kאאא(C)אאאא
אאאא :Gate(G)א• א
אאא(G)אאא א
Kאאא(B)אא
א א
(Drain) (Drain)
D D
G G
(n-channel)
(p-channel)
(Gate) اﻟﺒﻮاﺏﺔ P P (Gate) اﻟﺒﻮاﺏﺔ n n
p
S S
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(Source) (Source)
(JFET)אאאאאE٢J ٧F
pJ א JFETאEFnJ א JFET א EF
אpJ א JFETאאאE٣J ٧F
pJ אאאאאא،nJ א
JFET
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אא ١٤٦ א
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D D
G G
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(JFET)אאאאאE٣J ٧F
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Operation of the JFET אאא١J ٣J ٧
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אא ١٤٦ א
אא אא
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אא אא
IDאVPoאVDSא VDS
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K(ohmic region)
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(Vp)אאאVGSא
Kאאאאא، VDSא
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KE٦J ٧FVGS
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אא ١٤٦ א
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אVPאאWPinch-off voltage VPא •
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VP (VGS = -1V )ﻋﻨﺪ
EF E F
nJ אJFETאאא
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ID
IDSS
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VGS(off) 0
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JFET Parameters אאא٣J ٢J ٣J ٧
VDSא :Drain resistance rdא •
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IDא:Transconductance gm • א
KL20 0.1אא،VDSאVGSא
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אא ١٤٦ א
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Metal OxideSemiconductor Field Effect Transistor (MOSFET)
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(Insulated Gate Field Effect Transistor)אאאאא
אאא אאאKIGFET
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א(Enhancement type)אאאאאא Kא
K(Depletion type)אאאא
The EnhancementMOSFETאאMOSFETאא١J ٤J ٧
אא (Substrate)אאאא
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MOSFET אאא١J ١J ٤J ٧
The Enhancement MOSFET Operation
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Ep-substrate) Ep-substrate)
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אא ١٤٦ א
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אא ١٤٦ א
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KEE٢J ٨Fא
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KEE٢J ٨FאDEאF
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