BFR360F: Product Description

BFR360F
Low profile silicon NPN RF bipolar transistor
Product description
The BFR360F is a low noise device based on Si that is part of Infineon’s established third
generation RF bipolar transistor family. Its low current and low voltage characteristics
make the device suitable for low current amplifiers. It remains cost competitive without
compromising on ease of use.
Feature list
• Minimum noise figure NFmin = 1 dB at 1.8 GHz, 3 V, 3 mA
• High gain Gma = 15.5 dB at 1.8 GHz, 3 V, 15 mA
• OIP3 = 24 dBm at 1.8 GHz, 3 V, 15 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
• Low noise amplifiers (LNAs) for FM and AM radio
• LNAs for sub-1 GHz ISM band applications
Device information
Table 1 Part information
Product name / Ordering code Package Pin configuration Marking Pieces / Reel
BFR360F / BFR360FH6327XTSA1 TSFP-3-1 1=B 2=E 3=C FBs 3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0
www.infineon.com 2019-01-25
BFR360F
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package information TSFP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Datasheet 2 Revision 2.0

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BFR360F
Absolute maximum ratings
1 Absolute maximum ratings
Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test condition
Min. Max.
Collector emitter voltage VCEO – 6 V Open base
Collector emitter voltage VCES 15 E-B short circuited
Collector base voltage VCBO 15 Open emitter
Emitter base voltage VEBO 2 Open collector
Base current IB 4 mA –
Collector current IC 35
Total power dissipation 1) Ptot 210 mW TS ≤ 98 °C
Junction temperature TJ 150 °C –
Storage temperature TStg -55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
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BFR360F
Thermal characteristics
2 Thermal characteristics
Table 3 Thermal resistance

Min. Typ. Max.
Junction - soldering point RthJS – 250 – K/W –
240
mW
180
Ptot
120
60
00 15 30 45 60 75 90 105 120 °C 150

TS
Figure 1 Total power dissipation Ptot = f(TS)

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BFR360F
Electrical characteristics
3 Electrical characteristics
3.1 DC characteristics
Table 4 DC characteristics at TA = 25 °C (unless otherwise specified)

Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 6 9 – V IC = 1 mA, IB = 0,
open base
Collector emitter leakage current ICES – 1 30 2) nA VCE = 4 V, VBE = 0,
E-B short circuited
2 50 2) VCE = 10 V, VBE = 0,
TA = 85 °C,
E-B short circuited
Collector base leakage current ICBO 1 30 2) VCB = 4 V, IE = 0,
open emitter
Emitter base leakage current IEBO 1 500 2) VEB = 1 V, IC = 0,
open collector
DC current gain hFE 90 120 160 VCE = 3 V, IC = 15 mA,
pulse measured
3.2 General AC characteristics
Table 5 General AC characteristics at TA = 25 °C

Min. Typ. Max.
Transition frequency fT 11 14 – GHz VCE = 3 V, IC = 15 mA,
f = 1 GHz
Collector base capacitance CCB – 0.32 0.5 pF VCB = 5 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance CCE 0.2 – VCE = 5 V, VBE = 0,
f = 1 MHz,
base grounded
Emitter base capacitance CEB 0.4 VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
2 Maximum values not limited by the device but by the short cycle time of the 100% test.
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BFR360F
3.3 Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VCE
Bias-T RFOUT
3
VBE
RFIN Bias-T 1 2
GND
Figure 2 Testing circuit
Table 6 AC characteristics, VCE = 3 V, f = 1.8 GHz

Min. Typ. Max.
Power gain – – dB
• Maximum power gain Gma 15.5 IC = 15 mA
• Transducer gain |S21|2 13
Noise figure
• Minimum noise figure NFmin 1 IC = 3 mA
Linearity dBm
• 3rd order intercept point at output OIP3 24 IC = 15 mA, ZS = ZL = 50 Ω
• 1 dB gain compression point at output OP1dB 9
Table 7 AC characteristics, VCE = 3 V, f = 3 GHz

Min. Typ. Max.
Power gain – – dB
• Maximum power gain Gma 11 IC = 15 mA
• Transducer gain |S21|2 9
Note: Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 MHz to 6 GHz.

2019-01-25
BFR360F
3.4 Characteristic AC diagrams
17
GHz
14
5V
12
fT
3V
10
2V
1V
6
0.7V
00 5 10 15 20 25 30 mA 40
IC
Figure 3 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter
30
dBm
20
IP 3
15
10
6V
4V
3V
5 2V
1V
-5 0 5 10 15 20 25 30 mA 40
IC
Figure 4 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = 1.8 GHz, VCE = parameter

2019-01-25
BFR360F
0.8
pF
Ccb 0.6
0.4
0.2
00 2 4 6 8 10 12 V 16
VCB
Figure 5 Collector base capacitance CCB = f(VCB), f = 1 MHz
36
dB
Ic = 15mA
28
5V
24 2V
1V
G
20 0.7V
16
12
0
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
Figure 6 Transducer Gain IS21I2 = f(f), IC = 15 mA, VCE = parameter

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BFR360F
49
dB
Ic = 15mA
39
34
G
29
24
19
5V
14
2V
1V
9 0.7V
4
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
Figure 7 Gain Gma, Gms = f(f), IC = 15 mA, VCE = parameter
24
dB
22
5V
3V
2V
G
20
18
1V
16
0.7V
14
12 0 5 10 15 20 25 30 mA 40
IC
Figure 8 Gain Gma, Gms = f(IC), f = 900 MHz, VCE = parameter

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BFR360F
18
dB
5V
G
3V
14 2V
12
1V
10
0.7V
80 5 10 15 20 25 30 mA 40
IC
Figure 9 Gain Gma, Gms = f(IC), f = 1.8 GHz, VCE = parameter
22
dB 0.9GHz
19
18
17
G
16
15
1.8GHz
14
13
12 2.4GHz
11
3GHz
10
9
4GHz
8
7
0 5 10 15 20 25 30 35 mA 45
IC
Figure 10 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz

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BFR360F
24
dB Ic = 15mA 0.9GHz
Gmax
20 0.9GHz
S21
18
G
1.8GHz
16 Gmax
1.8GHz
14
S21
12
10
8
0 1 2 3 4 5 V 7
VCE
Figure 11 Maximum power gain Gmax = f(VCE), transducer gain |S21|² = f(VCE), IC = 15 mA,
f = parameter in GHz
+j50
+j25 +j100
+j10
2.4GHz 1.8GHz
0.9GHz
3GHz
0
10 25 50 100
4GHz
-j10 3mA
15mA
-j25 -j100
-j50
Figure 12 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 3 / 15 mA

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BFR360F
Figure 13 Minimum noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 3 / 15 mA
3
dB
F50
2.4
2.2
2 NFmin
F
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30 35 mA 45
IC
Figure 14 Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = 1.8 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.

2019-01-25
BFR360F
Package information TSFP-3-1
4 Package information TSFP-3-1
Figure 15 Package outline
Figure 16 Foot print
TYP E CODE
NOTE OF MANUFACTURER
P IN 1
Figure 17 Marking layout example
Figure 18 Tape information

2019-01-25
BFR360F
Revision history
Revision history
Document Date of Description of changes
version release
Revision 2.0 2019-01-25 New datasheet layout.

2019-01-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2019-01-25 IMPORTANT NOTICE WARNINGS

Published by The information given in this document shall in no Due to technical requirements products may contain
event be regarded as a guarantee of conditions or dangerous substances. For information on the types
Infineon Technologies AG
characteristics (“Beschaffenheitsgarantie”) . in question please contact your nearest Infineon
81726 Munich, Germany With respect to any examples, hints or any typical values Technologies office.
stated herein and/or any information regarding the Except as otherwise explicitly approved by Infineon
© 2019 Infineon Technologies AG application of the product, Infineon Technologies Technologies in a written document signed by
hereby disclaims any and all warranties and liabilities of authorized representatives of Infineon Technologies,
All Rights Reserved.
any kind, including without limitation warranties of Infineon Technologies’ products may not be used in
non-infringement of intellectual property rights of any any applications where a failure of the product or
Do you have a question about any third party. any consequences of the use thereof can reasonably
aspect of this document? In addition, any information given in this document is be expected to result in personal injury
Email: erratum@infineon.com subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
Document reference customer’s products and any use of the product of
IFX-kan1525443952290 Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.

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BFR360F

Low profile silicon NPN RF bipolar transistor

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet 2 Revision 2.0

Absolute maximum ratings

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Table 3 Thermal resistance

00 15 30 45 60 75 90 105 120 °C 150

Figure 1 Total power dissipation Ptot = f(TS)

Datasheet 4 Revision 2.0

Table 4 DC characteristics at TA = 25 °C (unless otherwise specified)

3.2 General AC characteristics

Table 5 General AC characteristics at TA = 25 °C

3.3 Frequency dependent AC characteristics

Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.

Figure 2 Testing circuit

Table 6 AC characteristics, VCE = 3 V, f = 1.8 GHz

Table 7 AC characteristics, VCE = 3 V, f = 3 GHz

Datasheet 6 Revision 2.0

3.4 Characteristic AC diagrams

Figure 3 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter

Datasheet 7 Revision 2.0

Figure 5 Collector base capacitance CCB = f(VCB), f = 1 MHz

Figure 6 Transducer Gain IS21I2 = f(f), IC = 15 mA, VCE = parameter

Datasheet 8 Revision 2.0

Figure 7 Gain Gma, Gms = f(f), IC = 15 mA, VCE = parameter

Figure 8 Gain Gma, Gms = f(IC), f = 900 MHz, VCE = parameter

Datasheet 9 Revision 2.0

Figure 9 Gain Gma, Gms = f(IC), f = 1.8 GHz, VCE = parameter

Datasheet 10 Revision 2.0

Datasheet 11 Revision 2.0

Figure 13 Minimum noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 3 / 15 mA

Datasheet 12 Revision 2.0

Package information TSFP-3-1

4 Package information TSFP-3-1

Figure 15 Package outline

Figure 16 Foot print

Figure 17 Marking layout example

Figure 18 Tape information

Datasheet 13 Revision 2.0

Datasheet 14 Revision 2.0

Edition 2019-01-25 IMPORTANT NOTICE WARNINGS

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