SMD Type MOSFET

N-Channel MOSFET
AO4496 (KO4496)

SOP-8 Unit:mm

■ Features
● VDS (V) = 30V
● ID = 10 A (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 19.5mΩ (VGS = 10V)

+0.04
0.21 -0.02
● RDS(ON) ＜ 26mΩ (VGS = 4.5V)
1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
4 Gate 8 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TA=25℃ 10
Continuous Drain Current ID
TA=70℃ 7.5
A
Pulsed Drain Current IDM 50
Avalanche Current IAR 17
Repetitive Avalanche Energy L=0.1mH EAR 14 mJ
TA=25℃ 3.1
Power Dissipation PD W
TA=70℃ 2
t ≤ 10s 40
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 75 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 24
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

N-Channel MOSFET
AO4496 (KO4496)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 1
Zero Gate Voltage Drain Current IDSS uA
VDS=30V, VGS=0V, TJ=55℃ 5
Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA 1.4 2.5 V
VGS=10V, ID=10A 19.5
Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=10A TJ=125℃ 29 mΩ
VGS=4.5V, ID=7.5A 26
On State Drain Current ID(ON) VGS=10V, VDS=5V 50 A
Forward Transconductance gFS VDS= 5V, ID=10A 30 S
Input Capacitance Ciss 550 715
Output Capacitance Coss VGS=0V, VDS=15V, f=1MHz 110 pF
Reverse Transfer Capacitance Crss 55
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 3 4.9 Ω
Total Gate Charge (10V) 9.8 13
Qg
Total Gate Charge (4.5V) 4.6 6.1
VGS=10V, VDS=15V, ID=10A nC
Gate Source Charge Qgs 1.8
Gate Drain Charge Qgd 2.2
Turn-On DelayTime td(on) 5
Turn-On Rise Time tr VGS=10V, VDS=15V, RL=1.5Ω, 3.2
Turn-Off DelayTime td(off) RGEN=3Ω 24 ns
Turn-Off Fall Time tf 6
Body Diode Reverse Recovery Time trr 22 29
IF= 10A, dI/dt= 500A/us
Body Diode Reverse Recovery Charge Qrr 14 nC
Maximum Body-Diode Continuous Current IS 3 A
Diode Forward Voltage VSD IS=1A,VGS=0V 1 V

Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

■ Marking
4496
Marking
KC****

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SMD Type MOSFET

N-Channel MOSFET
AO4496 (KO4496)
■ Typical Characterisitics
50 50
10V VDS= 5V
4.5V
4V 40
40

30 30

ID(A)
ID (A)

3.5V
20 20

VGS= 3V 125°C
10 10
25°C

0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.8

24 VGS= 10V
On-Resistance

VGS= 4.5V 1.6 ID= 10A

22
Ω)
RDS(ON) (mΩ

1.4 VGS= 4.5V

ID= 7.5A
Normalized On

20
1.2
18
VGS= 10V

16 1.0

14 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

50
ID= 10A
45 1E+01
40 1E+00
35
Ω)

1E-01
RDS(ON) (mΩ

125°C
IS (A)

30
1E-02 125°C
25
1E-03
20 25°C
1E-04
25°C
15
1E-05
10
1E-06
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

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 SMD Type MOSFET

N-Channel MOSFET
AO4496 (KO4496)
■ Typical Characterisitics

10 800
VDS= 15V
ID= 10A
8 Ciss
600

Capacitance (pF)
VGS (Volts)

6
400
4

200 Coss
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
10µs TJ(Max)=150°C
TA=25°C
10 100µs
100
Power (W)
ID (Amps)

RDS(ON) 1ms
1 limited
10ms
100ms 10
0.1 10s
TJ(Max)=150°C DC
TA=25°C
0.01 1
0.1 1 10 . 100 0.0001 0.01 1 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E) to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=75°C/W
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

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