CED3055LA/CEU3055LA

Nov. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES
30V , 12A , RDS(ON)=60m Ω @VGS=10V. D
RDS(ON)=90m Ω @VGS=5V.
6
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-251 & TO-252 package.
D
G
G G
D
S S
CEU SERIES CED SERIES
TO-252AA(D-PAK) TO-251(l-PAK) S

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS Ć20 V
ID 12 A
Drain Current-Continuous
-Pulsed IDM 45 A
Drain-Source Diode Forward Current IS 12 A
Maximum Power Dissipation @Tc=25 C 31 W
PD
Derate above 25 C 0.25 W/ C
Operating and Storage Temperature Range TJ, TSTG -55 to 150 C

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case RįJC 4.0 C/W
Thermal Resistance, Junction-to-Ambient RįJA 50 C/W

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 CED3055LA/CEU3055LA
ELECTRICAL CHARACTERISTICS (TC= 25 C unless otherwise noted)
C
4
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID=250µA 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 µA 6
Gate-Body Leakage IGSS VGS =Ć 20V, VDS = 0V Ć100 nA
ON CHARACTERISTICS a
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 2.5 V
VGS = 10V, ID = 12A 45 60 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS = 5.0V, ID =12A 70 90 mΩ
On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 12 A
Forward Transconductance gFS VDS = 10V, ID = 12A 20 S
b
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 364 PF
VDS =15V, VGS = 0V
Output Capacitance COSS 197 PF
f =1.0MHZ
Reverse Transfer Capacitance CRSS 62 PF
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) VDD = 15V, 12 25 ns
Rise Time tr ID = 12A 5 15 ns
VGS = 10V,
Turn-Off Delay Time tD(OFF) RGEN =2.5Ω 14 30 ns
Fall Time tf 14 30 ns
Total Gate Charge Qg VDS = 15V,ID = 6A 10 15 nC
Gate-Source Charge Qgs VGS = 10V 2 nC
Gate-Drain Charge Qgd 3 nC
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 CED3055LA/CEU3055LA
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage VSD VGS = 0V, Is = 12A 0.9 1.3 V
6
Notes
a.Pulse Test:Pulse Width ś 300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.

30 50
VGS=10,9,8,7,6V 25 C
25
40
VGS=5V
ID, Drain Current (A)

ID, Drain Current (A)

20
30
15

VGS=4V 20
10 -55 C
Tj=125 C
10
5
VGS=3V
0 0
0 1 2 3 4 5 6
0 0.5 1.0 1.5 2.0 2.5 3.0

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

600 1.80
RDS(ON), On-Resistance(Ohms)

ID=12A
VGS=10V
500 1.60
RDS(ON), Normalized
C, Capacitance (pF)

400 1.40
Ciss

300 1.20
Coss
200 1.00

100 0.80
Crss
0
0 5 10 15 20 25 30
0.60
-50 -25 0 25 50 75 100 125 150

VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation with

Temperature

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 CED3055LA/CEU3055LA
1.30 1.15

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

VDS=VGS ID=250ijA
1.20 1.10
ID=250ijA
1.10

BVDSS, Normalized
1.05
Vth, Normalized

1.00
1.00
0.90
0.95
0.80
0.90
0.70
0.60 0.85 6
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature
50 50
gFS, Transconductance (S)

40
Is, Source-drain current (A)

10

30

20 1.0
VDS=10V
10

0 0.1
0 5 10 15 20 0.6 0.8 1.0 1.2 1.4 1.6

IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
with Drain Current Variation with Source Current

10 70
VGS, Gate to Source Voltage (V)

it
VDS=15V ) Lim 10
0ij
8 ID=6A ( ON s
DS
ID, Drain Current (A)

20 R 1m
s
10
6 10 ms
DC

VGS=10V
2 Single Pulse
1
Tc=25 C
0 0.5
0 3 6 9 12 1 10 30 100

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 9. Gate Charge Figure 10. Maximum Safe
Operating Area
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 CED3055LA/CEU3055LA

4
VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN
6 G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

1
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.2
0.1
0.1 PDM
0.05
t1
0.02 t2
0.01 1. RįJC (t)=r (t) * RįJC
Single Pulse 2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

Square Wave Pulse Duration (sec)

Figure 13. Normalized Thermal Transient Impedance Curve

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