PHYSICS OF DEVICES

Enrico Sangiorgi
ARCES, University of Bologna

ESONN’ 2005

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 OUTLINE OF THE COURSE
CLASS 1
• Introduction to nano-micro-electronics.
• Electrostatic and electrodynamics in
mesoscopic devices: Schroedinger and
Boltzmann equations.
• Limits of the BTE. How to solve the BTE .
• The method of moments.
• The Monte Carlo method.

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 OUTLINE OF THE COURSE
CLASS 2

• MOSFET : basic theory.

• Threshold voltage
• MOSFET current-voltage characteristics.
• Short Channel Effects

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 OUTLINE OF THE COURSE
CLASS 3

• The MOSFET scaling approaches

• Scaled MOSFETS
• Limits of Scaling
• MOSFETs for the ITRS
• Alternative MOSFET architectures

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 OUTLINE OF THE COURSE
CLASS 4
• Simulation challenges in view of the ITRS
nodes.
• Ballistic and semiballistic deca-nanometer
MOSFETs

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Suggested Readings
Y. Taur T. H. Ning, Fundamentals of Modern VLSI Devices,
Cambridge University Press, ISBN 0 521 559596

Mark Lundstrom, Fundamentals of Carrier Transport, 2nd

Edition, Cambridge University Press

R.S. Muller T.I. Kamins, Device Electronics for Integrated

circuits, Wiley

Robert F. Pierret, Semiconductor device Fundamentals,

Addison-Wesley, ISBN 0201 54393 1

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Introduction to nano- and
micro- electronics

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 The Worldwide Semiconductor Industry
Food Chain

Electronics Revenue Electronics Revenue

$988 Billion $1,284 Billion 1.3X
3.0% of Worldwide GDP 3.3% of Worldwide GDP

Semiconductor Revenue Semiconductor Revenue

$144.7 Billion $223.4 Billion 1.5X
14.6% of Electronics 17.4% of Electronics

Capital Spending Capital Spending

$26.9 Billion $41.6 Billion
18.6% of 18.6% of 1.5X
Semiconductor Semiconductor

WFE WFE
$15.7 $24.7
Billion Billion 1.6X

2002 2007F Increases

Over 2002
Sources: Dataquest, Applied Materials, WSTS, SEMI

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Definition of Nanotechnology
Working at the length scale of 1-100 nm to
create materials, devices, and systems
with fundamentally new properties and
functions because of their nanoscale size.

paraphrased from www.nano.gov

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Technology for electronic systems:
from milli- to micro- to nano-
Moore’s Law

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

Moore’s Law
Components/chip (thousands) 100,000
Doubling every two years
10,000
1,000
100
10
1
0.1
0.01
0.001
Doubling every year
0.0001
55 60 65 70 75 80 85 90
Year
After G. Moore, 1975 IEDM
8/18/2005 Enrico Sangiorgi ARCES University of Bologna
 Device Performance
10.00
IEDM Benchmark Technologies
Normalized Device
Performance

ITRS Projections

1.00 Experimental (bulk-Si) Data

Bulk-Si Transport Properties

Historical Trend (17% per year)

0.10
1985 1990 1995 2000 2005 2010 2015 2020

Year

D. A. Antoniadis, MIT

ƒ 17% performance gain per half generation

– Consistent with our technology

12
 Power - Delay
3 Way NAND, Unloaded
0.22 0.18
HP
1 0.25
Power/Stage (mW)

0.1

Improving Device
Performanmce 0.22 SOI

0.01 0.13 SOI 0.18

0.18 SOI0.18+
0.1 1

Delay (nS)

13
 Enabling Elements
Node Feature Density Performance

250 Tinv: 35 A 0.5X 34%

Lpoly: 120 nm
Leakage: ~2 nA

SOI, Cu
180 Tinv: 28 A 0.5X 34%
Lpoly: 85 nm
Leakage: ~20 nA

SOI, Cu
130 Tinv: 23 A 0.5X 34%
Lpoly: 55 nm
Leakage: ~100 nA

Thin SOI
90 Tinv: 19 A 0.5X ~34%
Lpoly: 45 nm
Leakage: ~300 nA

Strain, Low K BEOL

14
 Wafer Dimensions

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Feature size scaling

DNA

10 nm
viruses
nerve
fibers 100 nm
groove
hair 1 µm spacing
diameter on CD
large
10 µm
bacteria

biological
100 µm
cells
insects
1 mm
1 cm

8/18/2005 Enrico Sangiorgi

nano scale
ARCES University of Bologna
 Scaling ed Integration

12 inch wafer: Earth:

300 mm diameter 13000 km diameter
23 billion components 7 billion people
8/18/2005 Enrico Sangiorgi ARCES University of Bologna
 Complexity and acceleration
Silicon-Germanium
Metal gates
High-k dielectrics
Low-k dielectrics
10 3 Copper interconnects
Tungsten plugs
Cobalt silicide
[nm]

Titanium silicide
Ef

Nichel silicide
fe

199 BPSG
Device dimensions

10 2 4
cti

Polysilicon
ve

Silicon nitride
L g (nm)

199
sc

9 Oxinitrides
a

Indium
li n

20
10 1 01 Arsenic
g

Boron Boron
ra

Phosphorous Phosphorous
t e

Aluminum Aluminum
SiO2 SiO2
10 0 Silicon Silicon
1990 1995 2000 2005 2010 2015 2020 1970 2000

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 Si Technology:
Complexity Increasing Exponentially

Source: Intel – ISTAC Meeting 2-2004

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 One roadmap for each product
DRAM 1/2 pitch
MPU/ASIC 1/2 pitch
MPU printed gate length
130n MPU physical gate length
100 90nm ASIC/low-power printed gate length
ASIC/low-power physical gate length
Dimension / nm

65nm
65nm 45nm
32nm
37nm
22nm
25nm
18nm

10 13nm
9nm

2002 2006 2010 2014

Year
8/18/2005 Enrico Sangiorgi ARCES University of Bologna
Nanometer electronic devices in Si
6nm gate
length 16nm gate
pMOSFET length
(IBM) nMOSFET
(MINATEC)

Gate
Source Drain
L g~16nm
8/18/2005 Enrico Sangiorgi ARCES University of Bologna
 Mobility in Ultra-thin-body SOI

8/18/2005 Enrico Sangiorgi ARCES University of Bologna

 The Problem: Power Density
1000 Air Cooling Limits (W/cm2)

100 Active Power Density

90 – Unipocessor
60 – Multi Processor
Power (W/cm2)

10

0.1

0.01
Stand-by Power Density

0.001
0.01 0.1 1
Gate Length (µm)

23
 Enabling Elements
Node Feature Density Performance

180 Tinv: 28 A 0.5X 34%

Lpoly: 85 nm
Leakage: ~20 nA

SOI, Cu
130 Tinv: 23 A 0.5X 34%
Lpoly: 55 nm
Leakage: ~100 nA

Thin SOI
90 Tinv: 19 A 0.5X ~34%
Lpoly: 45 nm
Leakage: ~300 nA

Strain, Low K BEOL

65 Tinv: Same > 0.5X ~15-30% (?)
Lpoly: <45
Leakage: Same

More Strain

24
 BEYOND SI-MOSFET

Carbon nanotubes:
(expected 2x improvement in current drivability)
8/18/2005 Enrico Sangiorgi ARCES University of Bologna
 When nano-electronics meets
biology

8/18/2005 Enrico Sangiorgi ARCES University of Bologna