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CEP50N06/CEB50N06: N-Channel Enhancement Mode Field Effect Transistor
CEP50N06/CEB50N06: N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 1.14 W/ C
Thermal Resistance, Junction-to-Ambient RθJA 62.5 W/ C
Rev 4. 2009.Nov
Specification and data are subject to change without notice . http://www.cetsemi.com
1
CEP50N06/CEB50N06
Electrical Characteristics Tc = 25 C unless otherwise noted
2
CEP50N06/CEB50N06
120 125
VGS=10V 25 C
100 VGS=8V
100
ID, Drain Current (A)
VGS=5V 25
20
TJ=125 C -55 C
VGS=4V
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10
1800 2.6
ID=30A
RDS(ON), On-Resistance(Ohms)
VGS=10V
1500 2.2
Ciss
C, Capacitance (pF)
RDS(ON), Normalized
1200 1.8
900 1.4
300 0.6
Crss
0 0.2
0 5 10 15 20 25 -100 -50 0 50 100 150 200
ID=250µA
IS, Source-drain current (A)
1.2
1
1.1 10
VTH, Normalized
1.0
0.9
0
10
0.8
0.7
-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 1.5 1.8
3
CEP50N06/CEB50N06
10 V =48V
VGS, Gate to Source Voltage (V)
DS RDS(ON)Limit
ID=50A
8 2
6 1ms
10ms
100ms
4 10
1 DC
2 TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 7 14 21 28 0 1 2
10 10 10
VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%
PULSE WIDTH
0
Transient Thermal Impedance
10
r(t),Normalized Effective
D=0.5
0.2
-1 0.1 PDM
10
t1
0.05 t2
0.02
1. RθJC (t)=r (t) * RθJC
0.01 2. RθJC=See Datasheet
Single Pulse 3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10