Essentials of MOSFETs

Unit 3: MOS Electrostatics

Lecture 3.7:
The Mobile Charge
vs. Gate Voltage
Mark Lundstrom
lundstro@purdue.edu
Electrical and Computer Engineering
Purdue University
West Lafayette, Indiana USA

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 MOSFET drain current

We have been discussing QS and QD, but we need Qn as

a function of surface potential and gate voltage.

last lecture

this lecture

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1) Subthreshold charge vs. gate voltage

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Mobile charge vs. gate voltage: Subthreshold

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Subthreshold charge vs. gate voltage

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Subthreshold charge vs. gate voltage

Below threshold, the

“inversion” layer
charge increases
exponentially with gate
voltage.

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2) Mobile charge vs. gate voltage: Above threshold

  

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 About the gate capacitance

p-Si or n-Si p-Si or n-Si

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 Semiconductor capacitance

Depletion: Strong inversion:

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Mobile charge vs. gate voltage

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 Equivalent Oxide Thickness (EOT)

high-k gate insulators

p-Si or n-Si

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 Capacitance Equivalent Thickness (CET)

EOT

Note: We will frequently refer to the gate capacitance in inversion, ,

as just . Remember that is just part of the total gate
capacitance in inversion..
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 Example

On-current conditions:

Oxide thickness:

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 Why is it hard to bend the bands more than 2ψB?

below threshold:

above threshold:

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Fully depleted ultra thin body (UTB) MOS structures

bottom oxide (BOX)

silicon

(ETSOI: Source: IBM, 2009) (FinFET: Source: Intel, 2015)

Does anything change for these UTB MOS structures?

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3) Mobile charge vs. gate voltage: Subthreshold UTB

Two gates, twice the capacitance.

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Mobile charge vs. gate voltage: Subthreshold UTB

subthreshold

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 Aside

m = 1 for fully depleted structures.

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Subthreshold charge vs. gate voltage

Below threshold, the electron

charge increases exponentially
with gate voltage.

(FD UTB) (bulk MOS) 19

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4) Above threshold charge vs. gate voltage

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Summary

FD UTB

bulk

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 Next topic

We have considered 1D MOS

electrostatics – in the direction n-Si
normal to the channel.

We now understand how the

mobile charge varies with gate
voltage above and below
threshold.

Next Lecture: How does two-

dimensional electrostatics affect
MOSFETs? n-Si p-Si
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