MOSFET (Metal Oxide Semiconductor Field Effect

Transistor) Characteristics

By M. Alfadhli
 Introduction
 MOSFETs are tri-terminal, unipolar, voltage-controlled, high input impedance devices which
form an integral part of vast variety of electronic circuits.
 The device is classified into two types, depletion-type and enhancement-type:
 Enhancement Type: The transistor requires a Gate-Source voltage(VGS) to switch the device “ON”. The
enhancement-mode MOSFET is equivalent to a “Normally Open” switch.

N-MOSFET SYMBOL ABD STRUCTURE P-MOSFET SYMBOL AND STRUCTURE

 Advantages
 It generates enhanced efficiency even when functioning at minimal voltage levels
 There is no presence of gate current this creates more input impedance which further provides
increased switching speed for the device
 These devices can function at minimal power levels and uses minimal current
 Disadvantages
 When these devices are functioned at overload voltage levels, it creates instability of the device
 As because the devices have a thin oxide layer, this may create damage to the device when
stimulated by the electrostatic charges

N.B: in the lab only the n-E-MOSFET is used 

CD4007 IC – CONTAINS 6 MOSFETS Structure of n-EMOSFET

 Modes Of Operation
Cut-Off Region
(VGS < VT  OFF), (ID = 0)

Saturation Region
(VGS > VT  ON)
VDS > VGS – VT
ID = K (VGS – VTH)2

Triode-Linear Region
(VGS > VT  ON)
VDS < VGS – VT
Modes Of Operation of MOSFET
 Small Signal Model / Hybrid-π Model
 The hybrid-pi model is a popular circuit model used for analysing the small signal behaviour of
bipolar junction and field effect transistors.
 Both Transfer Characteristic Curve and Output Characteristic Curve are used to set the
parameters required for modelling the MOSFET.
 The parameters are as following:
 Transconductance gm = ΔID/ ΔVGS, [A/V]
 where ID is drain current, and VGS is gate-to-source voltage

 Process parameter K = (Δ√ID/ ΔVGS)2 [A/V2]

 Output resistance due to channel modulation ro= ΔVDS/ΔID [Ω]

 Where VDS is the drain-to-source voltage.
Transfer Characteristic Graph
 Transfer Characteristic Graph

To find the parameter

K, get the slope K =
(Δ√ID/ ΔVGS)2 Δy
[A/V2]
Δx
 Output Characteristics Graph

From the slope on the

graph and at a constant
VGS

ro= ΔVDS/ΔID [Ω]

MOSFET CONFIGURATION

Common source: This FET configuration is

probably the most widely used. The common
source circuit provides a medium input and
output impedance levels. Both current and
voltage gain can be described as medium, but
the output is the inverse of the input, i.e. 180°
phase change. This provides a good overall
performance and as such it is often thought of
as the most widely used configuration.
Common Sourse: CS = CE
DC Measurements:
 FG is OFF
 Capacitor is open circuit
Measure VD, VG, and VS : VDS > VGS – Vt Operating on Saturation region
AC Measurements:
 FG is ON
 Capacitor is short circuit
You have to achieve two conditions:
1) adjust Vin until getting Vout without distortion
2) adjust f to get straight line
Same as what we did in CE
MOSFET CONFIGURATION

Common drain: This FET configuration is

also known as the source follower. The
reason for this is that the source voltage
follows that of the gate. Offering a high
input impedance and a low output
impedance it is widely used as a buffer.
The voltage gain is unity, although current
gain is high. The input and output signals
are in phase.
MOSFET CONFIGURATION

Common gate: This transistor configuration

provides a low input impedance while offering
a high output impedance. Although the voltage
is high, the current gain is low and the overall
power gain is also low when compared to the
other FET circuit configurations available. The
other salient feature of this configuration is that
the input and output are in phase.