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11 Design Verification 53
Some cell library vendors specify typical routed standard cell layout densities in
kgates / mm2.7 Commonly, a gate is defined as a 3-input static CMOS NAND or NOR
with six transistors. A 65 nm process (Q ~ 0.03 Rm) with eight metal layers may achieve a
density of 160–500 kgates / mm 2 for random logic. This corresponds to about
370–1160 Q2 / transistor. Processes with many metal layers obtain high density because
routing channels are not needed.