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Irgp4066Dpbf Irgp4066D-Epbf: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode
Irgp4066Dpbf Irgp4066D-Epbf: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode
IRGP4066DPbF
IRGP4066D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology C
VCES = 600V
• Low Switching Losses
• Maximum Junction Temperature 175 °C IC(Nominal) = 75A
• 5 μS short circuit SOA
• Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
E VCE(on) typ. = 1.70V
• Tight Parameter Distribution
• Lead Free Package n-channel
Benefits C C
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to E E
Low VCE (ON) and Low Switching Losses C C
G G
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD
IRGP4066DPbF IRGP4066D-EPbF
G C E
Gate Collector Emitter
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.33 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f ––– ––– 1.0
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
1 www.irf.com
10/08/2010
IRGP4066DPbF/IRGP4066D-EPbF
Notes:
VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2 www.irf.com
IRGP4066DPbF/IRGP4066D-EPbF
140 400
120
300
100
80
Ptot (W)
IC (A)
200
60
40
100
20
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000
IC (A)
10
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V TJ = 175°C; VGE =20V
300 300
250 250
VGE = 18V
200 200 VGE = 18V
VGE = 15V
VGE = 15V
VGE = 12V
ICE (A)
ICE (A)
VGE = 12V
150 VGE = 10V 150
VGE = 10V
VGE = 8.0V
VGE = 8.0V
100 100
50 50
0 0
0 2 4 6 8 10 0 2 4 6 8 10
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IRGP4066DPbF/IRGP4066D-EPbF
300 300
VGE = 18V
250 VGE = 15V 250
VGE = 12V
VGE = 10V
200 200
VGE = 8.0V
ICE (A)
IF (A)
150 150
0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = ≤60μs tp = 80μs
20 20
18 18
16 16
14 14
12 ICE = 38A 12
VCE (V)
VCE (V)
ICE = 38A
10 ICE = 75A 10 ICE = 75A
ICE = 150A
8 8 ICE = 150A
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 300
18
IC, Collector-to-Emitter Current (A)
250
16 T J = 25°C
14 T J = 175°C
200
12
VCE (V)
ICE = 38A
10 150
ICE = 75A
8 ICE = 150A
100
6
4 50
2
0 0
5 10 15 20 4 6 8 10 12 14 16 18
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IRGP4066DPbF/IRGP4066D-EPbF
12000 1000
10000
tdOFF
EON
tF
6000 100
4000
EOFF tdON
2000 tR
0 10
0 25 50 75 100 125 150 0 50 100 150
IC (A) IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
11000 10000
9000
EON tF
5000
tR
100
EOFF
3000 tdON
1000 10
0 25 50 75 100 0 20 40 60 80 100 120
RG (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
35 30
RG = 5.0Ω
30
RG = 10Ω 25
25
IRR (A)
IRR (A)
20 RG = 47Ω
20
15
RG = 100Ω
10 15
20 40 60 80 100 120 140 160 0 20 40 60 80 100
IF (A) RG (Ω)
Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
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IRGP4066DPbF/IRGP4066D-EPbF
30 3000
5.0Ω
150A 10Ω
47Ω
25 2500
QRR (nC)
100Ω 75A
IRR (A)
38A
20 2000
15 1500
200 300 400 500 600 700 200 300 400 500 600 700
Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C
400 20 800
RG = 10Ω
350 Tsc
15 600
300 RG = 22Ω
Energy (μJ)
Current (A)
Isc
Time (μs)
250 10 400
RG = 47Ω
200
5 200
150 RG = 100Ω
100 0 0
10 20 30 40 50 60 70 8 10 12 14 16 18
IF (A) VGE (V)
Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
10000 16
VCES = 300V
12
1000
Capacitance (pF)
10
Coes 6
100
Cres
4
10 0
0 100 200 300 400 500 0 20 40 60 80 100 120 140 160
VCE (V) Q G, Total Gate Charge (nC)
Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 75A; L = 485μH
6 www.irf.com
IRGP4066DPbF/IRGP4066D-EPbF
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05 R1 R2 R3 R4
R1 R2 R3 R4 Ri (°C/W) τi (sec)
0.01 0.02 τJ τC 0.00738 0.000009
τJ τ
0.01 τ1 0.09441 0.000179
τ2 τ3 τ4
τ1 τ2 τ3 τ4
0.13424 0.002834
Ci= τi/Ri
SINGLE PULSE Ci i/Ri 0.09294 0.0182
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
10
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1 0.10
R1 R2 R3 R4
0.05 R1 R2 R3 R4 Ri (°C/W) τi (sec)
τJ τC 0.02738 0.000053
0.02 τJ τ
τ1 τ2 τ3 τ4 0.34077 0.000485
0.01 0.01 τ1 τ2 τ3 τ4
0.41380 0.005203
Ci= τi/Ri
Ci i/Ri 0.22819 0.034407
0.001 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRGP4066DPbF/IRGP4066D-EPbF
DUT VCC 80 V +
0 - DUT
1K VCC
Rg
diode clamp /
DUT
L
4X
DC VCC -5V
DUT / VCC
DUT
DRIVER
Rg
SCSOA
C force
R= VCC
ICM
100K
D1 22K
VCC C sense
DUT
DUT
Rg G force 0.0075μF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
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IRGP4066DPbF/IRGP4066D-EPbF
300 60 300 60
VCE (V)
VCE (V)
ICE (A)
ICE (A)
200 40 200 40
5% V CE 10%
5% V CE
ICE
100 20 100 20
5% ICE
0 0 0 Eon 0
Eoff Loss Loss
-100 -20 -100 -20
-0.4 -0.2 0.0 0.2 0.4 0.6 7.6 7.8 8.0 8.2
time(µs) time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4
90 700 700
80
QRR 600 600
70
60 VCE
500 500
50
t RR
40
400 400
30
Vce (V)
V F (V)
ICE (A)
20 300 300
ICE
10
0 200 200
-10
Peak IRR
-20 100 100
-30
0 0
-40
-50 -100 -100
-0.20 -0.10 0.00 0.10 0.20 0.30 0.40 -3 0 3 6 9 12
time (µS) Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 25°C using Fig. CT.3
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IRGP4066DPbF/IRGP4066D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 ,5)3(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com
IRGP4066DPbF/IRGP4066D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
'$7(&2'(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010
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