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Tic116 Series Silicon Controlled Rectifiers
Tic116 Series Silicon Controlled Rectifiers
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC116D 400
TIC116M 600
Repetitive peak off-state voltage VDRM V
TIC116S 700
TIC116N 800
TIC116D 400
TIC116M 600
Repetitive peak reverse voltage VRRM V
TIC116S 700
TIC116N 800
Continuous on-state current at (or below) 70°C case temperature (see Note 1) IT(RMS) 8 A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
IT(AV) 5 A
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3) ITM 80 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 W
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
PRODUCT INFORMATION
2
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
THERMAL INFORMATION
14
12
0° 180°
Φ 10
10 Conduction
Continuous DC Angle
8
6
1
4 Φ = 180°
0 0·1
30 40 50 60 70 80 90 100 110 0·1 1 10 100
TC - Case Temperature - °C IT - Continuous On-State Current - A
Figure 1. Figure 2.
10 1
TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3. Figure 4.
PRODUCT INFORMATION
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
TYPICAL CHARACTERISTICS
VAA =12 V
RL = 100 Ω
IGT - Gate Trigger Current - mA
0·8
10
0·6
0·4
VAA =12 V
RL = 100 Ω
0·2
tp(g) ≥ 20 µs
1 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 5. Figure 6.
2 Duty Cycle ≤ 2 %
IH - Holding Current - mA
1·5
10
0·5
1 0
-50 -25 0 25 50 75 100 125 0·1 1 10 100
TC - Case Temperature - °C ITM - Peak On-State Current - A
Figure 7. Figure 8.
PRODUCT INFORMATION
4
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
6,6
6,0
15,32
14,55
14,1
1,47 12,7
0,97 1,07
0,66
1 2 3
2,74 0,64
2,34 0,41
5,28 2,90
4,68 2,40
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT INFORMATION
5
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PRODUCT INFORMATION