Cable Model for Partial Discharge Measurements

Abderrahim Khamlichi Fernando Garnacho Fernando Álvarez

Dept. of Electrical Engineering High Voltage Technological Center Dept. of Electrical Engineering
Polytechnic University of Madrid LCOE-FFII. Polytechnic University of Madrid
Madrid, Spain Madrid, Spain Madrid, Spain
ak@lcoe.etsii.upm.es fernandog@lcoe.etsii.upm.es fernando.alvarez@upm.es

Abstract— A transient analysis software for high voltage
cables has been developed as an aid to partial discharge
measurements carried out to assess the insulation condition of
installed cables. Knowledge of the transient behavior of cable
systems allow to know if a specific measuring PD system is
sensitive enough to detect partial discharge pulses that can occur
along a high voltage cable. Series impedances of a high voltage
II. ELECTRICAL PARAMETERS OF INSULATED CABLES
A. Series Impedance in High Voltage Power Cables
Series impedance of a power cable is given by the Bessel
differential equation that correlates the electrical magnetic
field Hϕ as function of the cable parameters.

H
cable are analyzed considering its semiconducting layers using

H
Bessel functions. The influence of semiconducting layers is also d2 (κ ) d (κ )
κ2 ⋅ φ
2
+κ⋅ φ
− (κ 2 + ν 2 ) ⋅ φ (κ ) = 0 (1)
taken into account to determine the parallel impedance of a high dκ dκ
voltage cable. A Gaussian pulse is considered as a PD pulse
where: κ = m⋅ r μ
traveling along the cable and the inverse Laplace transform is m2 = j ⋅ ω ⋅
used to determine the resulting pulse at the end of a cable length.
ρ
The results presented in this paper show that attenuation and
ω: voltage pulsation = 2.π. f
distortion of PD pulses traveling along any cable system depend
largely on the resistivity and the permittivity relativity of μ: permittivity of the medium
semiconducting layers of the high voltage cables.
ρ: resistivity of the medium.
Keywords— Power system modeling; partial discharges; power
cable insulation; insulation testing; attenuation measurement. The solution of the equation (1) applied to a power cable
with cable sheath and the inner and outer semiconductors
I. INTRODUCTION layers, requires to apply modified Bessel functions of first and
second species, Iv(κ), Kv(κ) [5]. The analysis of flux links of a
Signal attenuation in medium and high voltage cables has shielded cable with semiconducting layers, in which the
been discussed in the past by Stone and Boggs [1] and by
geometric and electrical parameters are known involves
Lemke [2] Gulski and others [3]. These studies are especially
important when PD measurements using unconventional determining the series impedance array [6] that correlates
methods for on-line PD measurements are planned [4]. The conductor voltage and sheath voltage, Uc and Us, with their
resistivity and permittivity of inner and outer semiconducting currents, Ic and Is:
layers play an important role in the behavior of attenuation and
distortion. U c   Z cc Z cs   I s 
U  =  Z ⋅ 
Z ss   I p 
(2)
Cable impedances in frequency domain are studied in [5]  s   sc
for HF, VHF and UHF ranges and they can be easily
implemented using numerical methods and a PD pulse can be The impedance array [Z] includes conductor self-
simulated by a Gaussian pulse. The inverse Laplace transform impedance, Zcc, sheath self-impedance, Zss and mutual
is applied to the resulting function of a Gaussian pulse through impedance between conductor and sheath Zcs, that are
a transfer function associated to a high voltage cable.
determined considering the contribution the inner and outer
The influence of the resistivity and the relative permittivity flux links, and considering also the current through the earth
of the semiconducting layers of high voltage cable in the signal impedance Ze .
propagation through the cable are analyzed using an example
published in [2]. The results show that both permittivity and the Z cc = Z cci + Z cce + Z e
resistivity of both semiconducting layers have a relevant Z cs = Z sc = Z csi + Z cse + Z e (3)
importance in the attenuation of the PD pulse depending on its i e
frequency spectrum causing effects of signal distortion. Z ss = Z + Z + Z e
ss ss

978-1-5090-2804-7/16/$31.00 ©2016 IEEE

 Each term of the formulas (3) is calculated by means of B. Parallel Admitance of High Voltage Power Cables
Bessel functions of first and second specie on the basis of the
cable geometry (see Fig. 1) and the knowledge of resistivity Fig. 2a shows the equivalent circuit of the parallel branch of
and relativity permeability of each cable component according a shielded cable composed by three different parallel arms
to the formulation given in [7] and [8]. For simplicity, only the connected in series, all in series with the parallel of the
formulation associated to the internal impedance of the cable capacitance and conductance of the over-sheath. The three
sheath, Z ssi , that is directly determined by the outer surface parallel arms connected in series are: the capacitance and the
conductance of the main insulation, (Cmi, Gmi) and of the both
impedance of the cable sheath, Z out ,is expressed: semiconducting layers (Csi, Gsi and Cse, Gse).
p

m2 ⋅ ρ2 (4)
Z out = ( ) ⋅ (m1 ⋅ ρ1 ⋅ G ⋅ R + m2 ⋅ ρ2 ⋅ H ⋅ S )
2⋅π ⋅c⋅ D a) b)

where Csi Gsi

m1 = j ⋅ ω ⋅ μ1 / ρ1 ; m2 = j ⋅ ω ⋅ μ2 / ρ2
D = m1 ⋅ ρ1 ⋅ F ⋅ G + m2 ⋅ ρ2 ⋅ E ⋅ H Cmi Gmi
Cape Gape
E = I 0 ( x3 ) ⋅ K1 ( x4 ) + I1 ( x4 ) ⋅ K 0 ( x3 )
F = I1 ( x4 ) ⋅ K1 ( x3 ) − I1 ( x3 ) ⋅ K1 ( x4 )
Cse Gse
G = I 0 ( x2 ) ⋅ K1 ( x1 ) + I1 ( x1 ) ⋅ K 0 ( x2 ) (5)
H = I1 ( x2 ) ⋅ K1 ( x1 ) − I1 ( x1 ) ⋅ K1 ( x2 )
R = I 0 ( x4 ) ⋅ K1 ( x3 ) + I1 ( x3 ) ⋅ K 0 ( x4 ) Cos Gos
Cos Gos
S = I 0 ( x4 ) ⋅ K0 ( x3 ) − I 0 ( x3 ) ⋅ K0 ( x4 )
x1 = m1 ⋅ a , x2 = m1 ⋅ b , x3 = m2 ⋅ b , x4 = m2 ⋅ c
Fig. 2. a) Parallel branch of the high voltage cables with inner and outer
semiconducting layers, b) Simplified equivalent circuit.
μ1: permittivity of the internal medium
ρ1: resistivity of the internal medium 2 ⋅ π ⋅ ε0 ⋅ εr si 2 ⋅ π ⋅ σ r si
Csi = ; Gsi =
μ2: permittivity of the external medium cc c
ln ln c
bc bc
ρ2: resistivity of the external medium.
2⋅ π ⋅ ε0 ⋅ εr mi
Cmi = ; Gmi = ω ⋅ Cmi ⋅ tan δmi
d
ln c
SHEATH cc (6)
2 ⋅ π ⋅ ε0 ⋅ εrse
; Gse = 2 ⋅ π ⋅ σ r se
INSULATION
INSULATION dp
dc cp Cse =
bp bp b
bc
cc ap
ln ln c
ac ap ac
CONDUCTOR: ρ 1c, μ 1c

2 ⋅ π ⋅ ε0 ⋅ εros ;
INNER SEMICONDUCTING Cos = Gos = ω ⋅ Cos ⋅ tanδos
LAYER : ρ 2c, μ 2c
d
OUTER SEMICONDUCTING
LAYER: ρ1p, μ 1p
ln p
SCREEN: ρ 2p, μ 2p
cp
The admittances formulas are expressed as functions of
Fig. 1. Geometric parameters associated to: a) cable conductor , b) cable capacitances and conductances:
sheath.
Ysi = Gsi + jCsi Ymi = Gmi + jCmi
The earth impedance due to the current through earth was Yse = Gse + jCse Yos = Gos + jCos (7)
studied by Carson [9] for overhead lines and by Pollaczek [10]
for high voltage cables. Recent studies carried out by Lima y The equivalent admittance of the three parallel admittances
Portela [11] led to simple formulas to determine the earth for the main insulation and the inner and outer semiconducting
impedances. However, numeric tools allow to perform the layers is expressed by Ymi:
numerical integration with high accuracy without using
1
analytical simplified formulas. Ymi = = Gmi + jCmi (8)
e
1 / Ysi + 1 / Ymi + 1 / Yse e e
 The total parallel admittance is given by the admittance A good compatibility between curves and the results
array. obtained applying FEM (blue circles) is achieved (see Fig. 4
and Fig. 5). Significant changes in the slope of curve of the real
 Ymie −Ymie  part of Zout of the inner semiconducting layer for frequencies
[Y ] =   lower than 1 GHz when the resistivity values are lower than
(9)
 −Ymie Ymie + Yos  10 Ω·m.
2
10

III. FORMULATION VALIDATION BY F.E.M. 10

In order to validate the formulation used for the numerical

10

model developed, the results of formulas presented in section II -1

10

were compared with the results obtained by F.E.M. [12]. For

imag(Zout-c)(Ω )
-2
10
1e-006
this comparison a 220 kV cable comprising a conductor of -3
10
1e-005
0.0001
2.000 mm2 cupper section, with XLPE insulation, whose 0.001
0.01
geometrical and electrical characteristics are given in Fig. 3 is
-4
10
0.1
1
analyzed. In Fig. 4 the impedance of the outer surface Zout for -5
10 10
100
the set conductor-inner semiconducting layer is compared. The -6
10
1000

curves Zout impedance versus frequency determined by means -7

of the formula (4) are compared with discrete results obtained 10

0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
10
8
10
9
10

by means of the FEM (blue circles).

f(Hz)

Fig. 5. Comparison of the imaginary part of the Zout of the set conductor-
inner semiconducting layer: curves obtained by formula (4), blue circles results
SHEATH obtained by FEM.
60,0 mm
54,73 mm
53,0 mm
54,0 mm

XLPE
IV. CABLE FREQUENCY MODELING
Fig. 6 shows the simplified circuit of a high voltage cable
27,75mm
26,75mm

with a cable length ℓ, as a quadrupole of two pair of terminals:

conductor and cable sheath versus grounding plane at the cable
origin (x=0) and at the cable end (x= ℓ), and voltages and
CONDUCTOR: ρ 1c, μ 1c
current being correlated by the formula [13].
INNER SEMICONDUCTING
LAYER : ρ 2c, μ 2c
OUTER SEMICONDUCTING [V ()] [Φ11 ()] [Φ12 ()]  [V (0)]
LAYER: ρ 1p, μ 1p
SCREEN: ρ 2p, μ 2p  [ I ()]  = [Φ ()] [Φ ()] ⋅  [ I (0)]  (10)
   21 22   

Fig. 3. Cable de 220 kV utilizado para la validación por FEM. where

Fig. 4 shows the real part of the outer impedance applying V (0)  V () 
formula (4) associated to the set of inner semiconducting layer- [V (0)] =  c  [V ()] =  c 
conductor, when the resistivity of the semiconducting layer Vs (0)  Vs ()  (11)
changes from 10-6 to 103 Ω·m.  I (0)   I ( ) 
2
10 [ I (0)] =  c  [ I ()] =  c 
1
10
1e-006
1e-005
0.0001
 I s (0)   I s ( ) 
0.001

Each subarray [φij], has 2x2 individual elements, that

0
10 0.01
0.1
1
-1
10 10
100
depend on the impedance array of formula (2) and the
real(Zout-c )(Ω )

-2
10
1000
admittance array given by formula (9).
-3
10
-
1

-4
10 [Φ11 ()] = [Y ] ⋅ cosh ( )
[Y ] ⋅ [ Z ] ⋅  ⋅ [Y ]

[Φ12 ()] = − sinh ( [Z ] ⋅ [Y ] ⋅  ) ⋅[Z ]

-5
c

10

(12)
()] = − sinh ( [Y ] ⋅ [ Z ] ⋅  ) ⋅ [ Z ]
-6
10
−1
0 1 2 3 4 5 6 7 8 9
10 10 10 10 10
f(Hz)
10 10 10 10 10
[Φ21 c
Fig. 4. Comparison of the real part of the Zout of the set conductor-inner
semiconducting layer: curves obtained by formula (4), blue circles results [Φ22 ()] = [Y ] ⋅ cosh ( )
[ Z ] ⋅ [Y ] ⋅  ⋅ [Y ]−1
obtained by FEM.
 x=0 x=l Fig. 7 shows the conductor-sheath mode of the propagation
Ic(0) Ic(l) velocity versus frequency for the 220 kV cable shown in
Fig. 3. The propagation velocity is saturated for high
frequencies, but two different saturations levels appear for
Vc(0) Ip(0) Ip(l) Vc(l) frequencies lower than 1 GHz when the resistivity is lower
Vp(0) Vp(l)
than 0.1 Ω·m. This strange saturation effect ratifies that in
Ic(0) +Ip(0) Ic(l) +Ip(l)
practice resistivity values lower than 0.1 Ω·m are not usually
used for the semiconducting layers.
Fig. 6. Conductor and sheath voltages and currents at the cable origin and
at the cable end. 190

185
Two different propagation modes are distinguished: the
coaxial propagation mode between the conductor and the cable 180

sheath (c-s mode) and earth propagation mode between sheath 175
ρsemi= 1e-006Ω ·m
ρsemi= 1e-005Ω ·m
and earth (e-s mode) [14]. For this reason [Z] and [Y] arrays ρsemi= 0.0001Ω ·m

v(m/μs)
are transformed: 170
ρsemi= 0.001Ω ·m

Z 0  ρsemi= 0.01Ω ·m
165

[Zm ] = [T ]t ⋅ [Z ] ⋅ [T ] =  c−s
ρsemi= 0.1Ω ·m

 ρsemi= 1Ω ·m

 0 Ze− s  160
ρsemi= 10Ω ·m
(13) ρsemi= 100Ω ·m
Y 0 
t

−1 155
[Ym ] = [T ]−1 ⋅ [Y ] ⋅ [T ]  =  c−s
ρsemi= 1000Ω ·m

0 Y 
 e−s  150
10
2 3
10
4
10 10
5 6
10
7
10 10
8 9
10
f(Hz)

where: [T] is the array that allows diagonal separation of both Fig. 7. Signal propagation velocity between conductor-sheath versus oscillation
propagation modes: c-s mode and e- s mode. frequency for different resistivity values of the semiconducting layer of a
220 kV cable (relative permeability εrs=50).
The propagation constant of each mode is given by:
γ 0  V. INVERSE LAPALACE TRANSFORM
[ γ ] = [Y ] ⋅ [ Z ] =  c − s (14)
m

 0 γ e − s  The transfer function Gx(s) associated with a generic length

where γ c−s = Yc-s·Zc-s ; γ e−s = Ye−s ·Z e−s (15) x of a high voltage cable is determined using the frequency
response of the cable parameters presented in section IV. When
the transfer function of a hv cable is known, the attenuation and
The characteristic imedance is given by: distortion of a PD pulse, h(t), generated in a cable defect,
 Zccs 0  which is placed at a specific cable length x, can be determined
[Z ] = [Z ] / [Y ] =   (16)
c

by applying the Laplace transform (Fig. 8):

 0 Zce−s 
where: Fx (s) = Gx (s) ⋅ H (s) (22)
where:
Z cs = Z c−s / Yc−s ; Z cse = Z e − s / Ye − s (17)
H(s): Laplace transform of the PD pulse h(t) in the defect site.
The propagation velocity array is given by: Gx(s): cable Laplace transfer function for the x cable length.
Fx(s): Laplace transform of the pulse h(t) at x.
2 ⋅ π ⋅ f / ℑ(γc−s ) 0 
[v] =   (18)
 0 2 ⋅ π ⋅ f / ℑ(γ )
e−s 
a) h(t) f(t)

x
and the conductor-sheath velocity is given by.
vc − s = 2 ⋅ π ⋅ f / ℑ(γc − s ) (19) b) H(s) Fx(s)
Gx(s)
The attenuation constant array is given by:
ℜ(γ ) 0  Fig. 8. DP pulse traveling along a cable: a) in the time domain,
[α] = [ℜ(γ)] =  c−s (20)
 0 ℜ(γs-e ) b) in the frequency domain.

and the signal attenuation conductor-sheath mode is given by: The transient response fx(t) of a PD pulse to a distance, x,
from the PD source is determined by applying the Bromwich
αc − s = ℜ(γc − s ) (21) integral [15] and [16].
 1 a + j⋅∞ VI. PD PULSE PROPAGATION ALONG A H.V. CABLE
⋅ Fx (s) ⋅ es⋅t ⋅ ds
f x (t ) = (23)
2 ⋅ π ⋅ j a− j⋅∞ In order to check the effectiveness of the numerical model
The “a” parameter is a real value for which the integral developed to predict the signal attenuation of a PD pulse after
Fx(s) converges. When the integral (23) is applied to real traveling a x distance along a specific power cable, the 24 kV
signals, such as PD pulses, where Fx(s) is known up to an upper cable presented in the reference [19] is here also analyzed (see
frequency limit, Ω, the inverse transform is determined by the Fig. 9). A Gaussian pulse modeled by the equation (25) is
following expression [17]: considered the PD pulse injected to a distance x from the cable
2 ⋅ ea⋅t Ω
end where a measuring system is placed. This analysis has
π 0
f x (t ) = ⋅ ℜ[ Fx (a + j ⋅ ω)] ⋅ cos(ω ⋅ t ) ⋅ dω (24) been performed for different resistivity values ρrs and for
Both parameters the real value “a” and the integration step, different relative permittivity values εrs of the semiconductors
Δω, should be appropriately chosen. The numerical calculation layers (ρrs between the limits 0.1 Ω·m and 1000 Ω·m and εrs
applying the expression (24), require a lot computing time to between 1 and 100), because usually these parameters are not
achieve good results, but there are special numerical methods well known in practice. In Fig. 11 signal attenuation curves
to reduce the time consumption and to improve numerical versus frequency are shown, which were obtained after
integration [18]. applying the numerical model. Reference [19] established the
signal attenuation curve C03 (Fig. 11) by means of the
formula (29) derived for lossless in the cable sheath and
A. PD pulse waveforms without semiconducting layers. For this reason the formula
includes the correction factor kcs to take into account these two
The waveforms of PD pulses in a cavity can be simulated effects. This factor is chosen so that results given by the
by means of symmetric or asymmetric waveforms using formula are close to experimental data. For the cable under
Gaussian pulses or double exponential functions respectively, study (Fig. 11) the value of the kcs factor given in reference
whose mathematical equations in the time and frequency [19] is 1.7. Attenuation curves derived from Stone y Boggs [1]
domains are given by the following formulas: studies are also included in Fig. 11.
2
1  t −τ 
− ⋅  2
Gaussian pulse: i (t ) = I 0 ⋅ e 2 σ 
(25)  
2 ⋅ ds μ0  ε0 ⋅ εr 
(29)
1
− ⋅( σ ⋅ω )
2 α d = k cs ⋅ ⋅ ⋅  .ω 5/ 4
I ( ω) = 2π ⋅ I 0 ⋅ σ ⋅ e 2
⋅e − jω⋅τ
(26) κs 2 ⋅ κ c  d ⋅ ln d 4 
 1 d3 
 
where I0 and σ are the waveform parameters of the pulse and τ where:
is the time displacement parameter. d1: conductor diameter
Double exponential pulse: d2: internal diameter of the sheath
ds: thickness of the inner semiconducting layer
i(t ) = I 0 ⋅ e−α⋅(t −τ ) − e− β⋅(t −τ )  (27) d 3 = d1 + 2 · d s
− j ⋅ω
d 4 = d2 - 2 · d s
( β − α) ⋅ e (28)
I ( ω) = I 0 ⋅ εr: relative permittivity of the main insulation
( α + j ⋅ ω) ⋅ ( β + j ⋅ ω)
κc=1/ρc
where I0, α and β are the waveform parameters of the pulse κp=1/ρp
and τ is the time displacement parameter.
A Gaussian pulse with a pulse width of 100 ns such as the SHEATH

one shown in Fig. 9 is used to analyze the pulse attenuation.

Φ 25,0 mm

ρp=1,728·10-8 Ω·m XLPE

Gaussian pulse 100 ns width. Gaussian pulse 100 ns width: Frequency amplitude spectrum ε r=2,4
1 0

0.9
Φ 14,0 mm

Φ 26,6 mm

-50
Φ 15,6 mm

0.8 Continuous Signal

Sampled signal at 20GHz ρc=2,824·10-8 Ω·m
0.7 -3dB level
Φ 27,0 mm

-100
0.6 CONDUCTOR
pu

dB

0.5 -150

0.4 INNER
SEMICONDUCTING
-200
0.3 LAYER
OUTER
0.2 SEMICONDUCTING
-250 LAYER SCREEN
0.1

0 -300
0 100 200 300 -1 0 1 2 3
10 10 10 10 10
t(ns) f(MHz)

Fig. 9. Gaussian pulse of 100 ns pulse width: a) Pulse waveform, b) FFT of the
Fig. 10. 24 kV cable geometry and electrical characteristics.
Gaussian pulse.
 Fig. 11 shows the attenuation and distortion curves of a
Gaussian PD pulse after traveling 2 km along the 24 kV cable
shown in Fig. 10 when the software model is applied. The
analysis is performed for two different relative permittivity
values of the semiconducting layers, from εrs= 1 to 100. For
each permittivity value different resistivity values of the
semiconducting layer ρrs are considered (between 0.1 Ω·m and
1000 Ω·m). For values of relative permittivity εrs≤50
(see Fig. 12), PD pulses have its peak approximately around
the same time, ∼12.7 μs, but attenuation and distortion
increases when the resistivity also increases if the resistivity
is in the range between 0.1 Ω·m and 100 Ω·m. However for
higher resistivity values (e.g. 1000 Ω·m), signal amplification
and signal anticipation effects appear. This effect can be
justified by analyzing the equivalent series impedance of the
cable parallel admittance Ymi (see equation (8).
35
C01
C02
30 C03
εrs = 50
25 εrs = 100
εrs = 250
20 εrs = 500
dB /k m
permittivity of the semiconducting layers are needed to
perform correct simulations. If they are not available,
characterization measurements should be performed to
estimate these parameters. After analyzing cable simulations,
and regarding the behavior of the measured PD pulses, it can
be predicted the most reasonable range of values for the
resistivity (between 0.1 Ω·m and 50 Ω·m) and for the relative
permittivity (several tens) of the semiconducting layers of
high voltage and medium voltage cables.
REFERENCES
[1] G.C. Stone, S.A. Boggs: Propagation of partial discharge pulses in
shielded power cables. Proceedings of Conference on Electrical
Insulation and Dielectric Phenomena. IEEE Publication 82CH1773-
1(1982) paper V-6, pp. 275-280.
[2] E. Lemke, T. Strehl: Möglichkeiten und Grenzen der TE-
Fehlstellenortung in kunststoffisolierten Energiekabeln unter Vor-Ort-
Bedingungen. ETG-Fachtagung Köln (2004) pp. 209-213
30 C01
C02 [3] E. Gulski, E. Lemke, M. Gamlin, E. Gockenbach, W. Hauschild, E.
Pultrum: Experiences in partial discharge detection of distribution power
C03
25 εrs= 100
εrs= 250 cable systems. ELECTRA 35 (2003) No. 208
20 εrs= 500
[4] IEC 62478 - High-voltage test techniques: Measurement of partial
εrs= 750
discharge by electromagnetic and acoustic methods.

εrs= 1000
dB /k m

εrs = 750
15
15
[5] S. A. Schelkunoff, “The Electromagnetic Theory of Coaxial
εrs = 1000
Transmission Lines and Cylindrical Shields”, Bell System Technical
10
10
Journal, Volume 13, Issue 4, pages 532–579, October 1934
ρ = 50 Ω·m [6] Milton Abramowitz, Irene A. Stegun, “Handbook of Mathematical
5 ρs = 10 Ω·m 5
s
Functions”. Dover Publications, Inc, New York.
0
1 2 3 4 5 6 7 8 9 10
0
1 2 3 4 5 6 7 8 9 10
[7] Amekawa, N., Nagaoka, N.; Baba, Y.; Ametani, A.”Derivation of a
f(MHz) f(MHz) semiconducting layer impedance and its effect on wave propagation
Fig. 11. Attenuation curves family in (dB/km) versus frequency for different characteristics on a cable”. Generation, Transmission and Distribution,
relative permittivity values of the semiconducting layer: IEE Proceedings - (Volume: 150, Issue: 4).
a) for a resistivity of 10 Ω·m, b) for a resistivity of 50 Ω·m [8] Ametani, A., Miyamoto, Y.; Nagaoka, N. ”Semiconducting Layer
impedance and its effect on cable wave-propagation and transient
Characteristics”. Power Delivery, IEEE Transactions on (Volume:19 ,
ρs=1000 Ω·m
ρs=100 Ω·.m Issue: 4 ).
0.6 ρs=50 Ω·m [9] John R, Carson, “Wave Propagation in Overhead Wires with Ground
ρs=10 Ω·.m
Return”. Bell System Technical Journal, Volume 5, Issue 4, pages 539–
ρs=1 Ω·.m
0.4 ρs=0,1 Ω·m 554, October 1926.
[10] Pollaczek, “Sur le champ produit par un conducteur simple infiniment
long parcouru par un courant alternatif”. Revue Générale de l’Électricité,
0.2 Tome XXIX-Nº22, pages 851-867,30 Mai 1931.
[11] Antonio C.S. Lima, Carlos Portela. “Closed-form expressions for ground
0 return impedances of overhead lines and underground cables”. Elsevier,
12.4 12.6 12.8 13 Electrical Power and Energy Systems 38 (2012) 20–26.
t(μs) [12] http://www.femm.info/wiki/HomePage
Fig. 12. Attenuation and distortion of a Gaussian PD Pulse after traveling 2 [13] Clayton R. Paul. “Analysis of Multiconductor Transmission Lines”.
John Wiley & Sons, Inc, 1994.
km along a 24 kV cable with a semiconducting layer of relative
permeability εrs=50. [14] Luis Marti. “Simulation of electromagnetic transients in underground
cables with frequency dependent modal transformation matrices”. Ph.D.
Thesis, University of British Columbia, November 1986.
VII CONCLUSIONS [15] Alexander D. Popularikas. “Transforms and Applications Handbook”.
The transient analysis software developed for determining CRC Press.
PD attenuation in high voltage cables is a useful tool to [16] Brian Davies. “Integral Transforms and Their Applications”. Texts in
Applied Mathematics 41, Springer.
evaluate PD sensitivity in high frequencies range where
[17] Alan, M., Cohen. ”Numerical Methods for Laplace Transform
unconventional PD methods are used. The numerical tool Inversion”. Springer, 2007.
developed has allowed analyzing the influence of the [18] Philip J. Davis, Philip Rabinowitz. “Methods of Numerical Integration”.
resistivity and relative permittivity of the semiconducting Dover publications, Inc,New York. Second Edition.
layers of high voltage cables on the PD signal attenuation and [19] CIGRE Brochure 297: “Practical aspects of the detection and location of
distortion. The knowledge of resistivity and relative partial discharges in power cables”, Task Force D1.02.05, June 2008.