AO4407

30V P-Channel MOSFET

General Description Product Summary

The AO4407 combines advanced trench MOSFET VDS -30V

technology with a low resistance package to provide ID (at VGS=-20V) -12A
extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V) < 13mΩ
and battery protection applications.
RDS(ON) (at VGS =-10V) < 14mΩ
RDS(ON) (at VGS =-5V) < 30mΩ

* RoHS and Halogen-Free Compliant

100% UIS Tested
100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G
G
S S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -12
ID
Current TA=70°C -10 A
Pulsed Drain Current C IDM -60
Avalanche Current C IAS, IAR 26 A
Avalanche energy L=0.3mH C EAS, EAR 101 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

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 AO4407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 -2.25 -2.8 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -60 A
VGS=-20V, ID=-12A 8.5 13 mΩ
VGS=-10V, ID=-12A 10 14
RDS(ON) Static Drain-Source On-Resistance mΩ
TJ=125°C 12 19
VGS=-5V, ID=-7A 19 30 mΩ
gFS Forward Transconductance VDS=-5V, ID=-10.5A 27 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1 V
IS Maximum Body-Diode Continuous Current -4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2060 2600 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 370 pF
Crss Reverse Transfer Capacitance 295 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2.4 3.6 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 24 30 36 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-12A 4.6 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, 9.4 ns
tD(off) Turn-Off DelayTime RL=1.25Ω, RGEN=3Ω 24 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 22 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V VDS=-5V
-6V -5V

60 60
-ID (A)

-ID(A)
-4.5V
40 40

20 -4V 20 125°C 25°C

VGS=-3.5V
0 0
0 1 2 3 4 5 1 2 3 4 5 6
-VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.6

Normalized On-Resistance
25
VGS=-5V 1.4 VGS=-10V
20 ID=-12A
Ω)
RDS(ON) (mΩ

17
15 1.2 5
2
10
1
10
VGS=-10V VGS=-5V
5 ID=-7A

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

30 1.0E+01
ID=-12A
1.0E+00
25
40
1.0E-01
Ω)

20
RDS(ON) (mΩ

125°C
IS (A)

1.0E-02 125°C
15
1.0E-03 25°C

10 25°C
1.0E-04

5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=-15V
ID=-12A
2500
8 Ciss

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4
1000
Coss
2
500

Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 10000
TA=25°C
100.0
1000
10µs
Power (W)

RDS(ON) 100µs
ID (Amps)

10.0
limited
100
1ms
1.0
10ms
10
TJ(Max)=150°C 10s
0.1 TA=25°C
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=75°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4407

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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