GISAGARA DISTRICT MAXIMUM: 100 MARKS

SAVE SECTOR DATE: /03/2018

ECOLE TECHNIQUE ST KIZITO DE SAVE DURATION: 3 HOURS
SCHOOL YEAR: 2018 TEACHER: DONAT URIMUBEMSHI
TERM: I

LEVEL: SENIOR SIX (6) COMPUTER ELECTRONICS (CEL)

EXAMINATION OF POWER ELECTRONICS (PEL)

SECTION A: ATTEMPT ALL QUESTIONS (55 MARKS)

1. Define the following terms: /5marks

(a) Power electronics
(b) cut-in voltage.

ANSWER:

(a) Power electronics is a subject that concerns the application of electronic-principles

into situations that are rated at power level rather than signal level.

(b) The forward voltage at which the current through the junction starts increasing
rapidly, is called the knee voltage or cut-in voltage. A Silicon diode has higher
forward voltage potential (0.7V) than Germanium diode (0.3V).

2. Classify the semi conductor devices based on gate signal requirements. /5marks

ANSWER:

1. Pulse gate requirement

Example: SCR, GTO, SITH, MCT
To Turn ON these devices, pulse voltage is applied as a control signal. Once the device
is turned on, the gate pulse is not required and thus removed.
2. Continuous gate requirement
Example: BJT, MOSFET, IGBT
For these devices, continuous gate signal is required to maintain them in ON state.

3. Differentiate controlled power semiconductor devices from uncontrolled power

semiconductor devices and give two examples for each. /5marks

ANSWER:

(a) Controllable devices: These devices are turned-on and –off by the application of
control signal. The devices which behave as controllable switches are BJT,
MOSFET, GTO, SITH, SIT and MCT.
(b) Uncontrollable power semiconductor devices: These are uncontrolled rectifying
devices. Their on and off states are controlled by power supply.
 4. List semiconductors which can withstand (i) unipolar voltages and (ii) bipolar
voltages. /5marks

ANSWER:

(a) Unipolar voltage withstanding devices. Ex:- BJT, MOSFET, IGBT

(b) Bipolar voltage withstanding devices. Ex:- SCR, GTO

5. Give the difference between AC voltage controller and a cycloconverter. /5marks

ANSWER:

(a) AC voltage controllers (AC voltage regulators): These convert

fixed ac voltage directly to variable ac voltage at the same
frequency. AC voltage controllers employ two thyristors in
antiparallel or triac.
(b) Cycloconvertes: These circuits convert input power at one
frequency to output power at different frequency through one-
stage conversion.
6. (a) Explain how power transistor can be operated in hard saturation. What is the
advantage of hard drive condition? /5marks

ANSWER:

7. What are the attributes of ideal switches? /5marks

ANSWER:
Ideal Characteristics

The attributes of an ideal switch may be summarized as follows:

Primary Attributes

1. Switching times of the state transitions between ‘‘on’’ and ‘‘off’’ should be zero.
2. ‘‘On’’ state voltage drop across the device should be zero.
3. ‘‘Off’’ state current through the device should be zero.
4. Power–control ratio (i.e., the ratio of device power handling capability to the
control electrode power required to effect the state transitions) should be infinite.
5. ‘‘Off’’ state voltage withstand capability should be infinite.
6. ‘‘On’’ state current handling capability should be infinite.
7. Power handling capability of the switch should be infinite.

Secondary Attributes

1. Complete electrical isolation between the control function and the power flow
2. Bidirectional current and voltage blocking capability
8. (a) What do you understand by Uni-junction transistor (UJT)? (b) Draw the V-I
characteristics of UJT. /5marks

ANSWER:

(a) UJT is an n-type silicon bar in which p-type emitter is embedded.

It has three terminals:

- Base 1
- Base2
- Emitter
(b)

9. (a) Give the types of MOSFETs. (b) What are the similarities between IGBT and MOSFET.
/5marks

ANSWER:
 (a)

(b)
Operating voltage
Blocking voltage
Since most power modules are used in DC voltage links which are AC-voltage supplied via
single-phase or three-phase rectifier bridges, the blocking voltages of IGBT and MOSFET
modules are adjusted to common line voltage levels for general-purpose use (600 V, 1200 V,
1700 V).
Switching frequency
Switching times of MOSFET and IGBT power modules are within the range of some ns to
some 100 ns.
Stress conditions of freewheeling diodes in rectifier and inverter mode
Most available IGBT and MOSFET modules with integrated freewheeling diodes are
dimensioned for use in inverters in reference to the power losses that can be dissipated at
rated current (e.g. cos φ = 0.6...1).
On-state current
There is no stationary or dynamic operating condition (with the exception of short-circuit
turn-off which may only be repeated to a limited extent) where the maximum rated chip
temperature of IGBTs, diodes, or MOSFETs may be exceeded.

10.List five (5) applications of IGBTs. /5marks

ANSWER:

(a) Medium power applications like DC and AC motor drives

(b) medium power supplies
(c) solid state relays and contractors

(d) general purpose inverters (e) UPS

(f) welder equipments (h) robotics

(g) servo controls (i) cutting tools
 (j) induction heating

11.How SCR can be turned on? /5marks

ANSWER:

SCR Triggering or Turn ON Methods

Forward Voltage Triggering

(a)
Temperature Triggering
(b)
dv/dt Triggering
(c)
Light Triggering
(d)
Gate Triggering:
(e)
1. DC Gate Triggering
2. AC Triggering
3. Pulse Triggering
SECTION B: ATTEMPT ANY THREE OF YOUR CHOICE QUESTIONS (30 MARKS)

12.

ANSWER:
13.
ANSWER:
 14. Itemize (ten) 10 differences between transistor and thyristor.

ANSWER:

15.Provide the followings:

(a) Stracture of SCR
(b) Transistor equivalent model for SCR
 (c) V-I characteristics of SCR.
(d) Expression for anode current.

ANSWER:

16.Discuss the types of SCR commutation circuits.

ANSWER:

SCR Turn OFF Methods

 Natural Commutation
 Forced Commutation
 Class A Commutation
 Class B Commutation
 Class C Commutation
 Class D Commutation
 Class E Commutation
(See the detailed circuit in your handouts)

SECTION C: ATTEMPT ONLY ONE QUESTION OF YOUR CHOICE (15 MARKS)

17.An SCR half-wave rectifier has a forward breakdown voltage of 150V when a gate current of
1mA flows in the gate circuit. If a sinusoidal voltage of 400V peak is applied, find:
(i) firing angle
(ii) average output voltage
(iii) average current for a load resistance of 200Ω
(iv) Power output.

ANSWER:

18.(a) Give the name of the circuit.

 (b)What is the role of C2? R2 and C3?

(c)Explain the working principle of the circuit.

ANSWER:

(a) Light operated lamp switch.

(b) R2 and C3 form a Snubber circuit (Snubbers are energy-absorbing circuits used
to suppress the voltage spikes caused by the circuit's inductance when a switch,
electrical or mechanical, opens.)
(c) When LDR is illuminated by mean of any light source (like torch light), the
resistance of LDR suddenly decreases and further drive triac as a result switch on
the lamp. LDR is so adjusted that light received from the lamp keeps resistance low.
So, the lamp remains continuously ‘ON’. Once lamp is ‘ON’ it can be switched ‘OFF’
again by interrupting the light falling on LDR, either by waving hand in front of it or
by interrupting power supply to the circuit for a   moment.

“Ich wϋnsche dir frohen Ostertag”