Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

FEATURES SYMBOL QUICK REFERENCE DATA

• ’Trench’ technology d
• Low on-state resistance VDSS = 100 V
• Fast switching
• Low thermal resistance ID = 17 A
g
RDS(ON) ≤ 110 mΩ
s

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a drain
plastic envelope using ’trench’ 1 gate
technology.
2 drain
Applications:-
• d.c. to d.c. converters 3 source
• switched mode power supplies 1 2 3
gate source
tab drain drain
The IRF530N is supplied in the
SOT78 (TO220AB) conventional
leaded package.

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj = 25 ˚C to 175˚C - 100 V
VDGR Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 100 V
VGS Gate-source voltage - ± 20 V
ID Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 17 A
Tmb = 100 ˚C; VGS = 10 V - 12 A
IDM Pulsed drain current Tmb = 25 ˚C - 68 A
PD Total power dissipation Tmb = 25 ˚C - 79 W
Tj, Tstg Operating junction and - 55 175 ˚C
storage temperature

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 7.8 A; - 150 mJ
energy tp = 300 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:14
IAS Peak non-repetitive - 17 A
avalanche current

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Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 1.9 K/W
to mounting base
Rth j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient

ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - 6 V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 9 A - 80 110 mΩ
resistance Tj = 175˚C - - 275 mΩ
gfs Forward transconductance VDS = 25 V; ID = 9 A 6.4 11 - S
IGSS Gate source leakage current VGS = ± 20 V; VDS = 0 V - 10 100 nA
IDSS Zero gate voltage drain VDS = 100 V; VGS = 0 V - 0.05 10 µA
current VDS = 80 V; VGS = 0 V; Tj = 175˚C - - 250 µA
Qg(tot) Total gate charge ID = 9 A; VDD = 80 V; VGS = 10 V - - 40 nC
Qgs Gate-source charge - - 5.6 nC
Qgd Gate-drain (Miller) charge - - 19 nC
td on Turn-on delay time VDD = 50 V; RD = 2.7 Ω; - 6 - ns
tr Turn-on rise time VGS = 10 V; RG = 5.6 Ω - 36 - ns
td off Turn-off delay time Resistive load - 18 - ns
tf Turn-off fall time - 12 - ns
Ld Internal drain inductance Measured tab to centre of die - 3.5 - nH
Ld Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
Ls Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 633 - pF
Coss Output capacitance - 103 - pF
Crss Feedback capacitance - 61 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IS Continuous source current - - 17 A
(body diode)
ISM Pulsed source current (body - - 68 A
diode)
VSD Diode forward voltage IF = 17 A; VGS = 0 V - 0.92 1.2 V
trr Reverse recovery time IF = 17 A; -dIF/dt = 100 A/µs; - 55 - ns
Qrr Reverse recovery charge VGS = 0 V; VR = 25 V - 135 - nC

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Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

Normalised Power Derating, PD (%) Transient thermal impedance, Zth j-mb (K/W)
10
100
90
80
D = 0.5
70 1
0.2
60
50 0.1
0.05
40 P D = tp/T
0.1 D tp
30 0.02

20 single pulse
T
10
0.01
0
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0 25 50 75 100 125 150 175
Mounting Base temperature, Tmb (C) Pulse width, tp (s)

Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance.

PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Zth j-mb = f(t); parameter D = tp/T

Drain Current, ID (A)

Normalised Current Derating, ID (%) 20
100 VGS = 10V 8V
18
90 Tj = 25 C
16 6V
80
14
70
12
60
50 10
5.4 V
40 8
5.2 V
30 6
20 5V
4
10 4.8 V
2 4.6 V
0 4.4 V
0
0 25 50 75 100 125 150 175
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Mounting Base temperature, Tmb (C) Drain-Source Voltage, VDS (V)

Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V ID = f(VDS)

Peak Pulsed Drain Current, IDM (A)

100 Drain-Source On Resistance, RDS(on) (Ohms)
0.2
RDS(on) = VDS/ ID 4.8V 5.2 V Tj = 25 C
0.18 4.6V 5V 5.4 V
tp = 10 us 0.16
10 0.14 6V
100 us
0.12
D.C. 0.1
1 ms
10 ms 0.08 8V
1
100 ms 0.06 VGS = 10V
0.04
0.02
0.1 0
1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20
Drain-Source Voltage, VDS (V) Drain Current, ID (A)

Fig.3. Safe operating area. Tmb = 25 ˚C Fig.6. Typical on-state resistance, Tj = 25 ˚C.
ID & IDM = f(VDS); IDM single pulse; parameter tp RDS(ON) = f(ID)

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Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

Drain current, ID (A) Threshold Voltage, VGS(TO) (V)

4.5
20
VDS > ID X RDS(ON) 4
18 maximum
16 3.5
14 3 typical
12
2.5
10 minimum
2
8
175 C 1.5
6
Tj = 25 C
4 1
2 0.5
0 0
0 1 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
Gate-source voltage, VGS (V) Junction Temperature, Tj (C)

Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage.

ID = f(VGS) VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Transconductance, gfs (S) Drain current, ID (A)

15 1.0E-01
14 VDS > ID X RDS(ON)
13 Tj = 25 C
12 1.0E-02
11
10
175 C minimum
9 1.0E-03
8
7 typical
6 1.0E-04
5 maximum
4
3 1.0E-05
2
1
0 1.0E-06
0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Drain current, ID (A) Gate-source voltage, VGS (V)

Fig.8. Typical transconductance, Tj = 25 ˚C. Fig.11. Sub-threshold drain current.

gfs = f(ID) ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Normalised On-state Resistance

2.9 Capacitances, Ciss, Coss, Crss (pF)
2.7 10000
2.5
2.3
2.1
1000 Ciss
1.9
1.7
1.5
1.3 Coss
100
1.1
0.9
0.7 Crss
0.5 10
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100
Junction temperature, Tj (C) Drain-Source Voltage, VDS (V)

Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.
RDS(ON)/RDS(ON)25 ˚C = f(Tj) C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

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Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

Source-Drain Diode Current, IF (A) Maximum Avalanche Current, IAS (A)

20 100
VGS = 0 V
18
16
14
10
25 C
12
175 C
10
8
Tj = 25 C Tj prior to avalanche = 150 C
6 1

4
2
0 0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.001 0.01 0.1 1 10
Source-Drain Voltage, VSDS (V) Avalanche time, tAV (ms)

Fig.13. Typical reverse diode current. Fig.14. Maximum permissible non-repetitive

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj avalanche current (IAS) versus avalanche time (tAV);
unclamped inductive load

August 1999 5 Rev 1.100

Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78

E A
P A1

q
D1

L2(1) L1

Q
b1
L

1 2 3

b c

e e

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)
UNIT A A1 b b1 c D D1 E e L L1 L2 P q Q
max.
4.5 1.39 0.9 1.3 0.7 15.8 6.4 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.27 0.7 1.0 0.4 15.2 5.9 9.7 13.5 2.79 3.6 2.7 2.2

Note
1. Terminals in this zone are not tinned.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT78 TO-220 97-06-11

Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)

Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".

August 1999 6 Rev 1.100

Philips Semiconductors Product specification

N-channel TrenchMOS transistor IRF530N

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 1999 7 Rev 1.100