L.

J Institute of Engineering and Technology

Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
1 1 Dielectrics are basically ________ C 1 Conductors Semiconductors Insulators Supeconductors
2 1 Identify a good dielectric. B 1 Iron Ceramic Plastic Magnesium
3 1 What is the process of producing electric dipoles inside the dielectric by an external electric A 1 Polarisation Dipole moment Susceptibility Magnetisation
field?
4 1 Polar molecules have permanent dipole moments even in the absence of _______field A 1 Electric Magnetic Electromagnetic None of these

5 1 Dielectric materials do not have________. A 1 Free electrons Bound charge Protons Neutrons
6 1 Dielectric characteristics are decided by _______ C 1 Dielectric cinstant Relative oermittivity Both None of these
7 1 Which of the following is not an example of Polar dielectric? B 1 Water Carbon dioxide Carbon monoxide Hydrochloric acid
8 1 The value of dielectric constant for dielectric materials is always ______ B 1 <1 >1 1 0
9 1 The stressed region around a charged body is called__________ A 1 Electric Magnetic Electromagnetic None of these
10 1 The unit of electric field is __________ B 1 NC N/C Vm Vm2
11 1 The polarization P in a solid dielectric is related to the electric field E and the electric flux C 1 E=e0 D+P D= E+ e0P D= e0 E+P D= e0 (E+P)
density D by the relation _________.
12 1 Polarization is defined as _______ C 1 Flux passing per unit Stressed region around a Induced dipole moment ratio of permittivity of
area charged body per unit volume of medium to permittivity
dielectric of free space
13 1 What is the effect of Electric field on a dielctric? Define a dipole. 3
14 1 What do you mean by polar and non-polar dielectrics? Give examples. 3
15 1 Define the following: i) dielectric constant ii) electric flux density iii) polarization vector iv) 4
electric susceptibility.
16 1 Explain polarisation vector of a dielectric. 3
17 1 Establish the relation between susceptibilty and dielectric constant. 5
18 1 The unit of Polarizability is B 1 farad / metre2 farad . metre2 farad / metre farad . metre
19 1 The unit of dipole moment is ____ A 1 coulomb.metre coulomb/metre coulomb.metre2 metre / coulomb
20 1 The value of relative permittivity for air is A 1 1 1.6 1.66 1.8
21 1 How does ionic polarisation occur? C 1 Splitting of ions Passing magnetic field Displacement of cations Never occurs
and anions
22 1 Which of the following polarisations is very rapid? A 1 Electronic polarisation Ionic polarisation Space charge Orientation polarisation
polarisation
23 1 Which of the following is the slowest polarisation method? D 1 Electronic polarisation Ionic polarisation Orientation polarisation Space charge
polarisation
24 1 Polarization that occurs in multiphase dielectrics is _________ C 1 Electronic polarisation Ionic polarisation Space charge Orientation polarisation
polarisation
25 1 Dipolar polarization is also called________ D 1 Electronic polarisation Ionic polarisation Space charge Orientation polarisation
polarisation
26 1 Explain the different mechanisms of Polarization mechanisms in dielectrics. 7
27 1 What do you mean by Electronic and ionic polarizability? Explain 4
28 1 At higher frequencies, which type of polarisation occurs? B 1 Ionic polarisation Electronic polarisation Orientation polarisation All of these

29 1 Calculate the electronic polarizability of an isolated Se atom.The atomic radius of Se atom is 3

-12
0.12nm.(Given: ε0=8.85×10 )
30 1 25 3
Calculate the electronic polarizability of argonatom.Given εr=1.0024 and N=2.7x 10
atoms/m3
31 1 Calculate the polarizability and relative permittivity in hydrogen gas with a density of 3
9.8×1026atoms/m3.Given the radius of hydrogen atom to be 0.5 Ǻ
32 1 Copper is a FCC crystal with the lattice constant of 3.6Ao and atomic number 29. If the 3
average displacement of electrons relative to the nucleus is 10-18m, on applying an electric
field, calculate the electronioc polarisation.
33 1 The electronic polarisability of an argon atom is 1.75 x 10-40 Fm2. What is the static dielectric 3
3 3
constant if its density is 1.8x10 kg/m ? Given atomic weight of Ar = 39.95 and NA = 6.025
x1026/ kmole
34 1 The internal or Lorentz field equals to______________ D 1 Ei = E + Ec E = (P/ 3ε0) 2
E = E + (P / 3ε0) Ei = E + ( P/ 3ε0)
35 1 What is meant by internal field? 3
36 1 Derive the Clausius Mossotti equation 5
37 1 For a cubic structure, total polarisability αT is equal to _______ D 1 αT= αO+ αE +αI αT= αO+ αE αT= αE +αI αT= αE
38 1 The Clausius Mossotti equation is given by A 1 [(3ε0)( εr -1)]= [(Nαe)(εr+2)] =[(3ε0)( [(3ε0)( εr -1)]= [(3ε0)( εr+1)]=
[(Nαe)(εr+2)] εr+1)] [(Nαe)(εr -2)] [(Nαe)(εr-2)]
39 1 Calculate the ratio between electronic and ionic polarisability of a material having εr = 4.94 4
and n2 = 2.69
40 1 The electronic polarisability of an argon atom is 1.75 x 10-40 Fm2. What is the static dielectric 3
constant using Clausius Mossotti equation if its density is 1.8x103 kg/m3? Given atomic
weight of Ar = 39.95
41 1 _________ is a naturally available dielectric material A 1 Air Nitrogen Sulphurhexafluoride Inert gas
42 1 ________ belongs to the category of mineral insulating oils. D 1 Sovol Vegetable oil Silicon oil Transformer oil
43 1 ________ belongs to the category of synthetic oils. A 1 Sovol Vegetable oil Silicon oil Transformer oil
44 1 ________ belongs to the category of miscellaneous oils. B 1 Sovol Vegetable oil Capacitor oil Transformer oil
45 1 _______ dielectric material is used for high temperature applications. D 1 Cotton Paper Silk Mica
46 1 Which is having higher breakdown strength? A 1 Solid dielectrics Liquid dielectrics Gaseous dielectrics All of these
47 1 Which of the following statements is true for rubber dielectric material? C 1 Both are true Both are false Only 1 is true Only 2 is true
1. It has good electrical and thermal properties
2. It has low tensile strength
48 1 Asbestos has ______ dielectric loss and _______dielectric strength C 1 High, high Low, low High, low Low, high
49 1 Explain types of dielectric materials in detail. 7
50 1 Discuss solid dielectric materials 3
51 1 Discuss liquid dielectric materials 3
52 1 Discuss gaseous dielectric materials 3
53 1 List some solid dielectric materials 3
54 1 List some gaseous dielectric materials 3
55 1 Capacitors with ________ dielectrics are used in radio frequency and low frequency C 1 Solid dielectrics Liquid dielectrics Gaseous dielectrics All of these
applications?
56 1 Capacitors with ________ dielectrics are used in high voltage applications? B 1 Solid dielectrics Liquid dielectrics Gaseous dielectrics All of these
57 1 Capacitors with ________ dielectrics are used in laboratory as standard capacitors? A 1 Solid dielectrics Liquid dielectrics Gaseous dielectrics All of these
58 1 ________ is used as a coolant that also maintains the insulation of the winding in a A 1 Transformer oil Silicon oil Sovol Vaseline
transformer

Page 1 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
59 1 The use of _______ in transformers prevents oxidation? B 1 Air Nitrogen Sulphurhexafluoride Inert gas
60 1 Discuss the role of dielectric materials in capacitors. 3
61 1 Discuss the role of dielectric materials in transformers. 3
62 2 Define magnetic material 1
63 2 Define Magnetization 1
64 2 Define magnetic poles 1
65 2 Define pole strength 1
66 2 Define magnetic length 1
67 2 Define magnetic field 1
68 2 Define magnetic lines of force 1
69 2 Define magnetic flux density 1
70 2 Define magnetic moment 1
71 2 Define magnetic field intensity 1
72 2 Define magnetisation 1
73 2 Define permeability 1
74 2 Define magnetic susceptiblity 1
75 2 Explain relation between B,H and M 4
76 2 A Magnetic field strength of 2×105 A/m in applied to paramagnetic material with relative 3
permeability of 1.01. Calculate the values of B and M.
77 2 A silicon material is subjected to a magnetic field of strength 1000 A/m. If the magnetic 3
susceptibility of silicon is -0.3 × 10-5, calculate its magnetisation. Also calculate the magnetic
flux density of the field inside the material. The permeability of free space is
4π × 10-7 H/m

78 2 Which one is not having permanent dipoles in absence of magnetic field? D 1 Paramagnetic Ferromagnetic material Ferrimagnetic material diamagnetic material
material
79 2 Magnetic susceptibility (χm) equals ___________ C 1 dipole moment per unit torque per unit area magnetization per unit none of these
volume magnetic field intensity
80 2 Which of the following is the unit of magnetic flux density? B 1 Weber/meter Tesla Newton-m/A All of these
81 2 The magnetism of a magnet is due to D 1 Earth Cosmic rays due to pressure of big spin motion of electrons
magnet inside the earth

82 2 Which of the following statements is true about magnetic lines of force? A 1 Magnetic lines of force Magnetic lines of force Magnetic lines of force Magnetic lines of force
are always closed. always intersect each tend to crowd far away do not pass through the
other. from the poles of the vacuum.
magnet
83 2 Basic source of magnetism ______________. B 1 Charged particles alone Movement of charged Magnetic dipoles Magnetic domains
particles
84 2 Magnetic permeability has units as_______ B 1 Wb / m2 Wb / A.m A/m Tesla/m
85 2 The unit of magnetic field strength is______ C 1 Wb / m2 Wb / A.m A/m Tesla/m
86 2 The ratio of intensity of magnetization to the magnetization force is known as B 1 Flux density Susceptibility Relative permeability None of these
87 2 Which of the following is not a unit of flux? B 1 Maxwell Tesla Weber All of these
2
88 2 One tesla is equal to______ C 1 1 Wb/mm 1 Wb/m 1 Wb/m2 1 mWb/m2
89 2 The direction of magnetic lines of force is B 1 From South Pole to From North Pole to From one end of the None of these
North Pole South Pole magnet to another
90 2 Which of the following is a vector quantity? B 1 Relative permeability Magnetic field intensity Flux density Magnetic potential

91 2 The unit of relative permeability is _____ D 1 Henry/m Henry Henry / sq-m Unitless
92 2 The magnetization is defined by the ratio of B 1 Magnetic moment to Magnetic moment to Magnetic flux density to Magnetic flux density to
area volume area volume
93 2 A paramagnetic material has a magnetic field intensity of 104 A/m. If the susceptibility of 3
the material at room temperature is 3.7x10-3, calculate the magnetization and flux density
of the material
94 2 Magnetic field intensity of a paramagnetic material is 104 A/m. At room temperature, its 3
susceptibility is 3.7x 10-3. Calculate the magnetization in the material.
95 2 A magnetic material has a magnetization of 3400 A/m and flux density of 0.0048 Wb/m2. 3
Calculate the magnetic field and relative permeability of the material.
96 2 The magnetic field strength of copper is 106 A/m. If the magnetic susceptibility of copper is 3
0.8 x 10-5, calculate the flux density and magnetization in copper.
97 2 A magnetic field of 1800 A/m produces a magnetic flux of 3 x10-5 Wb in an iron bar of cross 3
sectional area 0.2 cm2. Calculate permeability.
98 2 A magnetic material has a magnetization of 2300 A/m and flux density of 0.00314 Wb/m2. 3
Calculate the magnetizing field and relative permeability of the material.
99 2 Describe and Explain contributions to magnetic moments of the materials. 7
100 2 The Bohr magneton is given by_________ D 1 eh/2m eh/2πm eh/4m eh/4πm
101 2 The value of Bohr magneton is______ B 1 9.27 x 1024 A / m2 9.27 x 1024 Am2 9.27 x 1021 A / m2 9.27 x 1021 Am2
102 2 The magnetic moment of the atom is mainly due to_______ motion of electrons. C 1 Orbital Spin Both A and B None of these
103 2 The possible value of spin magnetic moment for each electron in an atom can be_______ C 1 +μB -μB Both A and B Zero

104 2 Which of the following contributions to the magnetic moment of the atom can be ignored? C 1 Due to orbital angular Due to spin of electrons Due to nuclear spin All of these
momentum of electrons

105 2 A paramagnetic material has BCC structure with a cube edge 2.5Ao. If the saturation value 4
of magnetization is 1.8 x 106 A/m, calculate the average magnetization contributed per
atom in bohr magneton.
106 2 The saturation magnetic induction of Nickel is 0.65 Wb/m2. If the density of the nickel is 4
8906 kg/m3 and atomic weight is 58.7. Calculate the magnetic moment of the nickel atom in
Bohr magneton
107 2 Define Diamagnetism and its general Properties 5
108 2 Define Paramagnetism and its general Properties 5
109 2 Define Ferromagnetism and its general Properties 5
110 2 Define AntiFerromagnetism and its general Properties 5
111 2 Comparision between Diamagnetic,paramagnetic and ferromagnetic matrial 6

Page 2 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
112 2 For which of the following is magnetic susceptibility negative? D 1 Paramagnetic and Paramagnetic Materials Ferromagnetic Materials Diamagnetic Materials
Ferromagnetic materials only only

113 2 Which of the following materials can behave as permanent magnets? C 1 Diamagnetic Paramagnetic Ferromagnetic Anti ferromagnetic
114 2 For which of the following materials the net magnetic moment is zero? C 1 Diamagnetic materials Ferrimagnetic Anti ferromagnetic None of these
115 2 Paramagnetic materials have relative permeability C 1 Slightly less than unity Equal to unity Slightly more than unity Equal to that
ferromagnetic mate rails

116 2 Susceptibility is positive for__________ C 1 Nonmagnetic Diamagnetic substances Ferromagnetic None of the above
substances substances
117 2 A magnetic material that is repelled by magnetic field is called______ A 1 Diamagnetic Paramagnetic Ferromagnetic Anti ferromagnetic
118 2 Explain hysteresis. 5
119 2 Draw B-H curve for a ferromagnetic material and identify retentivity and coercive fields on 4
the curve
120 2 What is retentivity? 1
121 2 What is Coercivity? 1
122 2 What are hard and soft magnetic materials? Compare them on the basis of hysteresis 7
curve, Give examples of each type.
123 2 The magnetism left in the iron after exciting field has been removed is known as B 1 Permeance Residual magnetism Susceptance Reluctance
124 2 The area of his hysteresis loss is a measure of_______ C 1 Permittivity Permeance Energy loss per cycle Magnetic flux
125 2 In order to minimise hysteresis loss, the magnetic material should have______ D 1 Large B - H loop area Large coercivity High retentivity Low retentivity
126 2 B/H curve shows the relationship between? B 1 Magnetic field strength Magnetic field strength Current and magnetic Voltage and magnetic
and magnetic flux and magnetic flux flux density flux density
density
127 2 The value of H needed to make the intensity of magnetic field zero is called______. B 1 Retentivity Coercivity Permeability Susceptibilty
128 2 Which of the following techniques are employed in digital recording? D 1 Return to zero Non-return to zero Phase and coding All of these
129 2 Which of the following materials are commonly used in magnetic storage? D 1 Ferromagnetic Ferrimagnetic Paramagnetic Both A and B
130 2 The hard disc records information by_______. C 1 Propagation Gravitation Magnetization None of these
131 2 Which of the follwing can store maximum amount of data? B 1 Compact disc Hard disc Floppy disc Magneto optic disc
132 2 Hard disc is a type of ______ storage. B 1 Volatile Non-volatile Flash Cache
133 2 The storage device which can retain the stored information even when the power is off is B 1 Volatile Non-volatile Flash Cache
called________
134 2 Which of the following statements is true for magnetic hard disc? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. Access time is very less during reading and writing datas.
2.Recovery of data is possible if the data is corrupted.
135 2 Explain the process of recording and reading data in magnetic hard disc. 5
136 2 State few advantages and disadvantages of magnetic hard disc. 4
137 2 Explain in detail various techniques in digital recording. 5
138 3 What do you mean by vector and scalar quantities? Explain. 3
139 3 Explain products of vectors. 7
140 3 The expression of dot product of vectors C and D is _______ A 1 CD cosθ CD sinθ CD Zero
141 3 The expression of dot product of vectors C and D when they are parallel to each other is C 1 CD cosθ CD sinθ CD Zero
_______
142 3 The expression of dot product of vectors C and D when they are perpendicular to each D 1 CD cosθ CD sinθ CD Zero
other is _______
143 3 The expression of dot product of vectors C and D when they are opposite to each other is C 1 CD cosθ CD -CD Zero
_______
144 3 According to the identity of dot product, _________ A 1 A.B=B.A A . B = '-B . A AB sinθ -AB sinθ
145 3 The expression of cross product of vectors C and D is _______ B 1 CD cosθ CD sinθ CD Zero
146 3 Calculate A . B and angle between A and B for vector A = 5ax + 4ay + 3 az and B = 2ax + 3ay + 3
4az.
147 3 Two vectors are given as A = ax + ay and B = ax + 2ay - 2az. Determine A . B and angle 3
between A and B
148 3 Two vectors are given as A = ax + ay and B = ax + 2ay - 2az. Determine A x B and angle 3
between A and B
149 3 Calculate A . B and angle between A and B for vector A = 2ax + 2ay - az and B = ax - 3ay + 4az. 3

150 3 Calculate A x B and angle between A and B for vector A = 2ax + 2ay - az and B = ax - 3ay + 4az. 3

151 3 The expression of cross product of vectors C and D when they are parallel to each other is D 1 CD cosθ CD sinθ CD Zero
_______
152 3 Which of the following statements is true in case of product of vectors? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. Dot product is commutative.
2. Cross product is commutative.
153 3 Define gradient, divergence and curl. 3
154 3 ______ is the net outward flux of any vector per unit volume as the volume about the point A 1 Divergence Gradient Curl None of these
shrinks to zero.
155 3 Which of the following statements is true in case of Gradient? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. The divergence of a vector is a scalar.
2. The value of divergence depends on the position of the point at which it is evaluated.

156 3 Find the gradient of the function given by, x2 + y2 + z2 at (1,1,1) B 1 i+j+k 2i + 2j + 2k 2xi + 2yj + 2zk 4xi + 2yj + 4zk
157 3 Compute the divergence of the vector xi + yj + zk. D 1 0 1 2 3
158 3 Find the divergence of the vector yi + zj + xk. B 1 -1 0 1 3
159 3 Find the divergence of the vector F= xe-x i + y j – xz k A 1 (1 – x)(1 + e-x) (x – 1)(1 + e-x) (1 – x)(1 – e) (x – 1)(1 – e)
160 3 Find the divergence of the field, P = x2yz i + xz k B 1 xyz + 2x 2xyz + x xyz + 2z 2xyz + z
161 3 Find the gradient of function φ. 3
1. φ = cos xyz
2. φ = x2 + y2 + z2
162 3 If φ(x, y, z) = 3x2y - y3z2, find ∇φ at the point(1, -2,-1). 3
163 3 If A = 3x2yax - 2y2z2ay + xy2zaz find ∇A at the point(1, -1,1). 3
164 3 Determine curl of vector A = ax(2x2 + y2) + ay(xy -y2) and B = yzax + 4xy ay + yaz 3
165 3 Find out the divergence of the following function, A = 2xyax+ x2zay+z3az 3
166 3 Find out the curl of the following function, A = 2xyax+ x2zay+z3az 3
167 3 Find the curl of vector field yax - xay. and yzax + zxay + xyaz 5

Page 3 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
168 3 The Cartesian system is also called as B 1 Circular coordinate Rectangular coordinate Spherical coordinate Space coordinate
system system system system
169 3 Which of t he foloowing statements is true? C 1 Only 1 is true Only 2 is true Both are true Both are false
1.The Cartesian coordinates can be related to cylindrical coordinates and spherical
coordinates.
2.The scalar factor of Cartesian system is unity. State True/False.
170 3 A charge is placed in a square container. The position of the charge with respect to the C 1 Spherical system Circular system Cartesian system Space coordinate
origin can be found by______ system
171 3 The cylindrical coordinate system is also referred to as B 1 Cartesian system Circular system Spherical system Space system
172 3 A charge located at point p (5,30⁰,2) is said to be in which coordinate system? B 1 Cartesian system Cylindrical system Spherical system Space system
173 3 Find expressions for differential lengths, area and volume for cartesian system. 5
174 3 Find expressions for differential lengths, area and volume for cylindrical system. 5
175 3 Find expressions for differential lengths, area and volume for spherical system. 7
176 3 dr, rdθ, rsinθ dφ are the differential lengths for _________ C 1 Cartesian system Cylindrical system Spherical system Space system
177 3 dr, rdφ, dz are the differential lengths for _________ B 1 Cartesian system Cylindrical system Spherical system Space system
178 3 dx, dy, dz are the differential lengths for _________ A 1 Cartesian system Cylindrical system Spherical system Space system
179 3 dv = rdrdφdz is the differential volume for ________ B 1 Cartesian system Cylindrical system Spherical system Space system
180 3 ________is the diffrential volume for spherical system. C 1 dv = rdrdφdz dv= dx dy dz dv = r2sinθ dr dθ dφ dv = rsinθ dr dθ dφ
181 3 The vector differential length in cylindrical system is given by_________ A 1 dl= drar + rdφar + dzaz dl= drar + dφar + dzaz dl= drar + r2dφar + dzaz dl= drar - rdφar + dzaz
182 3 Which of the following is not true for differential area of Cylindrical system? D 1 ds = r dφ dz ar ds = drdz aφ ds = rdrdφ az ds = rdr dθ aφ
183 3 ∇ x H = J is the point form of Maxwell's equation derived from ________ B 1 Faraday's law Ampere's law Gauss law(Electric field) Gauss law(Magnetic
field)
184 3 ∇ x E = 0 is the point form of Maxwell's equation derived from ________ A 1 Faraday's law Ampere's law Gauss law(Electric field) Gauss law(Magnetic
field)
185 3 Mathematically, Faraday's law is expressed as_________ A 1 ∲E. dl = 0 ∲E. dl = 1 ∲V. dl = 0 ∲V. dl = 1
186 3 The statement of Faraday's law is_______ B 1 The line integral of H The EMF is induced in a The total electric flux The total magnetic flux
aroung a single closed loop when the magnetic crossing the closed crossing the closed
path is equal to the flux is changing in the surface is equal to the surface is zero.
current enclosed by that vicinity of it. total charge enclosed by
path. that surface.
187 3 The statement of Ampere's law is_______ A 1 The line integral of H The EMF is induced in a The total electric flux The total magnetic flux
aroung a single closed loop when the magnetic crossing the closed crossing the closed
path is equal to the flux is changing in the surface is equal to the surface is zero.
current enclosed by that vicinity of it. total charge enclosed by
path. that surface.
188 3 The total electric flux crossing the closed surface is equal to the total charge enclosed by C 1 Faraday's law Ampere's law Gauss law(Electric field) Gauss law(Magnetic
that surface is the statement of ______ field)
189 3 Derive the point form of Maxwell's equation from Faraday's law. 3
190 3 Derive the point form of Maxwell's equation from Ampere's law. 3
191 3 Derive the point form of Maxwell's equation from Gauss's law for Electric field. 3
192 3 Derive the point form of Maxwell's equation from Gauss's law for Magnetic field. 3
193 3 Point form of Maxwell's equation derived from current continuity equation can be written D 1 ∇xH=J ∇xE=0 ∇.B=0 ∇.J=0
as________
194 3 Discuss continuity equation for current and displacement current 5
195 4 Define Ultrasonic waves 1
196 4 Classify the sound based on its frequencies. 1
197 4 Sound having frequency higher than 20 KHz is called________ B 1 Infrasonic waves Ultrasonic waves Audible sound None of these
198 4 Frequency range for ultrasonic sound wave is___________. C 1 < 2 Hz 20Hz-20,000Hz > 20 kHz 2 Hz-10Hz
199 4 The frequency of Infrasonic wave is ______. C 1 < 2 Hz 20Hz-20,000Hz < 20 Hz 2 Hz-10Hz
200 4 Which one is not correct for Ultrasonic waves? C 1 Type of sound wave longitudinal wave Transverse wave mechanical wave
201 4 Which of the following waves does not belong to the electromagnetic spectrum? D 1 X-rays Microwave Infrared Ultrasonic wave
202 4 State properties of Ultrasonic Waves. 4
203 4 Which of the following is correct for Ultrasonic waves? B 1 Only 1 is true Only 2 is true Both are true Both are false
1. They have very high wavelength.
2. They have a high penetration depth.
204 4 Magnetostriction effect is obtained from ________ material. C 1 Diamagnetic Paramagnetic Ferromagnetic Ferrimagnetic
205 4 Explain Magnetostriction effect. 3
206 4 Describe the principle and the method of producing of ultrasonic waves by 7
Magnetostriction method(with diagrams).
207 4 Write the answers of below given questions based on the ultrasonic waves production 7
method using ferromagnetic material.
(1) What is the principle for ultrasonic wave production?
(2) Draw a figure of the oscillatory circuit.
(3) Write the working of the ultrasonic wave production method.
(4) Give merits and demerits of the method
208 4 Draw the circuit diagram for Magnetostriction oscillator method 3

209 4 Explain Piezoelectric effect. 3

210 4 Draw circuit diagram of piezoelectric oscillator and explain the production of ultrasonic 7
waves using it
211 4 Draw the circuit diagram for Piezoelectric oscillator method 3

212 4 Calculate the frequency to which piezoelectric oscillator circuit should be tuned so that a 3
piezoelectric crystal of thickness 0.1cm vibrates in its fundamental mode to generate
ultrasonic waves.(Young-s modulus and the density of material of crystal are 80 Gpa and
2654 kg/m3)
6
213 4 Calculate the capacitance required to produce ultrasonic waves of 10 Hz with an 3
inductance of 1 Henry.
214 4 The wavelength of light transmitted through a liquid is 6000 Å. The first order angle of 3
diffraction is 0.046o. Calculate the velocity of ultrasonic waves in the liquid. The frequency
of the ultrasonic waves produced by the transducer is 2MHz.
215 4 Calculate the thickness of a quartz plate needed to produce ultrasonic waves of frequencies 3
(i) 2MHz (ii) 30KHz. (Given ƍ= 2650Kg/m3 and Young-s Modulus = 8 x1010N/m2.

216 4 Calculate the length of an iron rod which can be used to produce ultrasonic waves of 20 3
3 3 10
KHz. Density of iron is 7.23 x 10 kg/m andYoung’s modulus is 11.6 x 10 N/m2.

Page 4 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
217 4 In Magnetostriction method the length of rod is kept 10 mm. If the inductance of the coil is 3
25 mH. Find (i) The value of resonance Frequency and (ii) The value of capacitance to
produce an ultrasonic wave at resonance. (E=125 GPa and ρ =3568kg/m3)

218 4 Which of the following effects can be used to produce ultrasonic waves? A 1 Magnetostriction effect Doppler Effect Magnetic effect Sound effect

219 4 When is ultrasonic waves produced using piezo electric oscillator? B 1 At constant temperature At resonance At constant pressure At constant voltage

220 4 Which of the following is true for Magnetostriction oscillator? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. It uses ferromagnetic materials for generation of ultrasonic waves.
2. It generates ultrasonic waves of frequency upto 500MHz.
221 4 Piezoelectric effect is when materials produce electric charges when ____________ B 1 Voltage is applied Mechanical Stress is Electric field is applied Magnetic field is applied
applied
222 4 The working principle of generating ultrasonic waves using Quartz is __________ C 1 Magnetostriction effect Piezoelectric effect Inverse piezoelectric None of these
effect
223 4 Piezoelectric oscillator consists of _________ D 1 copper rod aluminum wire gold crystal quartz crystal
224 4 What is piezoelectric effect in a crystal? D 1 Change in resistance Change in frequency due Current developed due Voltage developed due
due to temperature to temperature to force applied to mechanical stress
225 4 Which of the following method is used to produce the sound of frequency more than D 1 Magnetostriction Piezo-electric method Inverse piezo-electric Both A and B
20kHz? method method
226 4 In the magnetostriction method, a ferromagnet substance changes its shape and size when C 1 magnetic field alternating current Both A and B None of these
placed in a ______
227 4 In magnetostriction method of ultrasonic sound production, _______ A 1 a ferromagnetic rod is a magnetic cube is used a dielectric rod is used a conducting rod is used.
used
228 4 Describe the methods for the detection of ultrasonic waves. 5
229 4 Explain Kundt`s tubes method for the detection of Ultrasonic Sound. 5
230 4 Explain thermal detection method for the detection of ultrasonic waves. 3
231 4 What is an acoustical grating? 1
232 4 What is an acoustic grating? Describe an experimental method of determining the velocity 7
of ultrasonic waves in liquids
233 4 Which of the following causes acoustical grating? D 1 Magnetic waves Electric waves Magnetostriction effect Ultrasonic waves

234 4 What is the principle for measurement of the velocity of ultrasonic waves? B 1 Magnetostriction effect Acoustical grating Doppler Effect Acceleration effect

235 4 Which of the following is not a qualitative method? B 1 Piezoelectric crystal Sensitive flame method Kundt's tube method Acoustic grating method
method
236 4 When a pressure is applied to a quartz crystal then ____________ D 1 positive charges are negative charges are no charge is induced both positive and
induced induced negative charges are
induced
237 4 __________ is not an example of Piezoelectric material D 1 Quartz Tourmaline Rochelle salt Glass
238 4 Which of the following is true for sensitive flame method? B 1 Only 1 is true Only 2 is true Both are true Both are false
1. It is a quantitative method.
2. The flame flickers at the nodes.
239 4 Quartz crystal method of ultrasonic waves works on the principle of _______ A 1 Piezoelectric method Inverse Piezoelectric Magnetostriction None of these
method method
240 4 ________ wire is used in thermal detection method of ultrasonic waves. D 1 Nickel Lead Copper Platinum
241 4 Which of the following method is used to detect ultrasonic waves? D 1 Piezoelectric method Sensitive flame method Kundt’s tube method All of these

242 4 A sensitive flame can be used to detect ultrasonic waves because_____ C 1 it is sensitive to it is sensitive to density a and b none of these
mechanical pressure variation
243 4 In Kundt’s tube method, C 1 talcum powder is used a vertical glass tube is Lycopodium powder can All are correct.
used be used
244 4 Explain the applications of ultrasonics. 5
245 4 What is ultrasonic welding? Why is it called cold welding? 5
246 4 Explain what is ultrasonic cutting/drilling. Also state some of its uses. 5
247 4 Which of the following statements are true for ultrasonic welding? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. Welding is done without melting.
2. It is used to join dissimilar metals.
248 4 Which of the following uses ultrasonic sound waves? D 1 Non-destructive testing SONAR Ultrasonography All of these

249 4 What is Ultrasonic cleaning? Explain. Also discuss its uses 5

250 4 What is Cavitation? Explain. 4
251 4 Which of the following statements are true for ultrasonic drilling/cutting? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. It is used to cut materials of high impact brittleness.
2. It uses abrasive materials for drilling/cutting.
252 4 What is cold welding? B 1 Welding at very low Welding using ultrasonic Welding under water Welding at constant
temperature waves temperature
253 4 Full form of SONAR is …………. C 1 Sound Negative and Solar Navigation and Sound Navigation and Solar Negative and
Radiation Radiation Ranging Ranging
254 4 Explain the applications of ultrasonics. 5
255 4 Write short note on SONAR. 3
256 4 How can the depth of sea be measured using ultrasonic waves? 3
257 4 An ultrasonic source of (i) 0.09 MHz (ii) 1 MHz sends down a pulse towards the seabed 3
which returns after 0.55 sec. The velocity of sound in water is 1800 m/s. Calculate the depth
of the sea and wavelength of pulse
258 4 An ultrasonic source of 0.07 MHz sends down a pulse towards the seabed which returns 3
after 0.65 sec. The velocity of sound in water is 1700 m/s. Calculate the depth of the sea
and wavelength of pulse
259 5 State the full form of LASER Light 1
Amplificat
ion by
stimulate
d
emission
of
Radiation
260 5 Which one is not correct for LASER? C 1 Highly monochromatic highly polychromatic highly polarized light highly directional light
light light

Page 5 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
261 5 State the characteristics of LASER. Coherenc 1
e
High
Intensity
High
Directiona
lity
High
Monochro
maticity
262 5 State and explain the characteristics of laser. 4
263 5 Which of the following is a unique property of laser? C 1 Directional Speed Coherence Wavelength
264 5 Which of the following statements is true? C 1 Only 1 is true Only 2 is true Both are true Both are false
1. Laser beam has very high intensity and directional properties.
2. When laser light is focussed on a particulkar area for a long time, then that particular
area will be heated.
265 5 LASER is abbreviations used for B 1 Name of scientist Light amplification by Light amplification by Light absorption by sun
stimulated emission of spontaneous emission of and earth radiation
radiation radiation
266 5 A Laser beam is monochromatic. It means it has A 1 Single Frequency Wide Width Narrow Width Several Colours
267 5 Which of the following is not the property of laser? D 1 Coherence High directionality Extreme brightness Divergence
268 5 Derive the relation between Einstein’s ‘A’ and ‘B’ coefficients. 6
269 5 What is Einstein coefficient? 1
270 5 Show that the ratio of Einstein A coefficient for spontaneous emission to that of Einstein B 6
3 3
coefficient for stimulated emission is given by 8πhν /C
271 5 The mathematical expression for existence of stimulated emission is proposed by A 1 Einstein Ohm Newton Pascal
___________(
272 5 Process in which a photon is absorbed by the atom, causing an electron to jump from a A 1 Absorption of Radiation Spontaneous Emission Stimulate Emission Population Inversion
lower energy level to a higher energy level.
273 5 Which formula is giving the correct absorption of radiation D 1 h= (E2 + E1)/v h= (E2 – E1)/v v= (E2 + E1)/h v= (E2 – E1)/h
274 5 Process in which an electron without any outside influence decays from a higher energy B 1 Absorption of Radiation Spontaneous Emission Stimulate Emission Population Inversion
level to a lower energy level
275 5 Process in which an electron with the help of outside influence decays from a higher energy C 1 Absorption of Radiation Spontaneous Emission Stimulate Emission Population Inversion
level to a lower energy level
276 5 The Process by which an electron-induced to jump from a Higher energy level to a lower B 1 Spontaneous Emission Stimulated Emission Both 1 and 2 None of These
energy level by the presence of Electromagnetic Radiation is called___
277 5 Which emission has a broad spectrum and many wavelengths? A 1 Spontaneous Emission Stimulated Emission Both 1 and 2 None of These
278 5 Which emission has monochromatic radiation and a single wavelength? B 1 Spontaneous Emission Stimulated Emission Both 1 and 2 None of These
279 5 Stimulated emission rate depends on _____ C 1 intensity of the external number of atoms in the both 1 & 2 none of these
radiation excited state
280 5 The ratio of Einstein’s coefficient A and B can be expressed as C 1 8πhC³/V³ 8πhV/C³ 8πhV³/C³ 8πhdV
281 5 Name the main components of LASER system Optical 1
Resonator

Pumping
Source

Active
Medium

282 5 The LASER can be produced by A 1 Stimulated Emission spontaneous emission Instantaneous emission Induced Absorbtion

283 5 Define Metastable state 1

284 5 Define: (1) Population Inversion (2) Stimulated Emission (3) Life Time (4) Metastable State. 5

285 5 What are population inversion and optical pumping? 2

286 5 State condition for population inversion. N2>N1 1
287 5 What is an optical resonator cavity? What role does it play in a laser? 2
288 5 Define: Pumping, Life time 3
289 5 What are population inversion, optical pumping and active medium for laser? 3
290 5 Briefly explain spontaneous and stimulated emission 6
291 5 State the differences between laser light and ordinary light. 4
292 5 Briefly explain Stimulated emission 4
293 5 Briefly explain Induced Absorbtion 4
294 5 Difference between spontaneous and stimulated emission 6
295 5 The life time of an atom in meta stable state is of order of _______ seconds. A 1 -3 -2 -9 -8 -8 -6 -6 -3
10 – 10 10 – 10 10 – 10 10 – 10
296 5 What is the life time of charge carrier in excited state? B 1 -3 -2 -9 -8 -4 -2 -6 -3
10 – 10 10 – 10 10 – 10 10 – 10
297 5 What is the need to achieve population inversion? A 1 To excite most of the To bring most of the To achieve stable To reduce the time of
atoms atoms to ground state condition production of laser
298 5 Which is the Process to Achieve the Condition of Population Inversion A 1 Pumping Emission Both 1 & 2 None of These
299 5 Presence of a metastable state is essential for B 1 spontaneous emission stimulated emission stimulated absorption non-radiative transition

300 5 An active medium is that B 1 which can move in which population population inversion can which can interact with
inversion is created never be created another medium
301 5 The process of population inversion is to increase the number of atoms in the ____ A 1 excited state ground state intermediate state None of These
302 5 If N1, N2 be the number of atoms in energy States E1, E2 (E2>E1) then the condition of B 1 N1 > N2 N1 < N2 N1 = N2 N1 >= N2
inverse population is _______
303 5 Which of the following condition is very essential for the production of laser light? D 1 Spontaneous emission Stimulated emission Population inversion All of the above
304 5 Define on which three things wavelength of emitted radiation depends on? 2
305 5 Explain principle of Laser 4
306 5 Define semiconductor laser 1
307 5 Explain principle of semiconductor Laser 5
308 5 State advantages and disadvantages of semiconductor Laser 5
309 5 Write shortnote onSemiconductor Laser along with construction and working 7
310 5 Calculate the wavelength of radiation emitted by an LED made up of a semiconducting D 1 2.8 Å 4.3308 Å 5548.4 Å 4430.8 Å
material with band gap energy 2.8eV
311 5 Direct Conversion Method is used in C 1 Solid laser Gas Laser Semi Conductor Laser Liquid Laser

Page 6 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
312 5 Which one is a two-level laser _____ C 1 Ruby laser Helium-Neon laser Semiconductor laser Carbondioxide laser
313 5 What is holography? 1
314 5 Explain holography in detail. 7
315 5 Describe how laser is used in LIDAR. 4
316 5 Write short note on: Laser cutting 5
317 5 Which of the following is used for the formation of holograms? D 1 X-ray Visible Light Infrared Lasers
318 5 The information in the hologram exists in ____ A 1 Interference Diffraction Interferometer Polarization
319 6 Define fibre optic system. 1
320 6 What is communication? 1
321 6 Which of the following is the transmission frequency in optical fibre? B 1 1014 1011 1012 1013
322 6 Loss of signal in fibre optic cable occurs due to_______ D 1 Dispersion Attenuation Bending All of these
323 6 The bandwidth available with a single glass fibre is more than_______ C 1 100MHz 1000MHz 100 GHz 1000GHz
324 6 What is the predicted life span of fibre optic cables? B 1 10 to 15 years 20 to 30 years 5 to 10 years more than 30 years
325 6 Discuss the advantage of optical fibre communication system over the conventional coaxial 4
communication system
326 6 Discuss in detail the advantages of fibre optics cable over metallic cable 7
327 6 Materials that cannot be used in the construction of fibre optic cables are_________ C 1 Glass Plastic Metals All of these
328 6 1. Fibre optic cables are resistant to spark hazards. C 1 Only 1 is true Only 2 is true Both are true Bothe are false
2. Fibre optic cables are corrosion resistant
329 6 Which of the following is not an advantage/s of fibre optic cable? D 1 Low cost Greater safety Extremely large Cross talk
bandwidthg

330 6 The basic principle behind fibre optic communication is ____________. C 1 reflection refraction total internal reflection diffraction
331 6 State the working principle of fibre optics. Total 1
Internal
Reflection

332 6 The conditions to be satisfied for Total Internal Reflection is_________. A 1 n1 > n2, ø>øc n1 < n2, ø> øc n1 > n2, ø< øc n1 < n2, ø< øc
333 6 Give two conditions for TIR n1> n2 1
&ø > øc
334 6 According to Snell's law, _______ B 1 n1/n2 = sin φ1 / sin φ2 n1/n2 = sin φ2 / sin φ1 n1/n2 = sin φ1 + sin φ2 n1/n2 = sin2 φ1 / sin2 φ2

335 6 State the main components of the optical fibre Core, 1

Cladding,
Buffer
jacket,
Kevlar,
Polyureth
ane jacket

336 6 Total internal reflection occurs when a light ray travels from _______to ______. More 1
dense to
Less
dense
medium
337 6 Define total internal reflection 1
338 6 Can light propagate through a fibre optic cable with an angle of incidence at the entrance No 1
end greater than acceptance angle?
339 6 What is kevlar? 1
340 6 What is the purpose of cladding in fibre optic cable? 3
341 6 Explain construction of an Optical fibre. 3
342 6 Describe the construction of fibre optic cable 4
343 6 Discuss in detail the principle of optical fibre communication 5
344 6 Which layer gives tensile strength to the fibre? B 1 Buffer jacket Kevlar Polyurathane jacket Cladding
345 6 How many protective layers does a fibre optic cable have? C 1 1 2 3 4
346 6 Which layer helps in keeping the light inside the fibre? D 1 Buffer jacket Kevlar Polyurathane jacket Cladding
347 6 Which among the following is described by the concept of numerical aperture in an optical A 1 Light collection Light scattering Light dispersion Light polarisation
fibre?
348 6 Define: Acceptance angle 1
349 6 Define Critical Angle in optical fibre 1
350 6 What do you mean by acceptance angle and numerical aperture of a fibre? 3
351 6 What do you mean by acceptance angle and numerical aperture of a fibre? Derive 7
expression for them.
352 6 What is relative refractive index? Derive relation between numerical aperture and relative 3
refractive index.
353 6 The refractive indices of the core and the cladding materials are 1.55 and 1.51 respectively. 3
Calculate the numerical aperture of the optical fibre made from these materials.

354 6 A silica optical fibre has a core of refractive index 1.55 and a cladding of refractive index 3
1.47. Determine (i) the critical angle at the core-cladding interface (ii) the numerical
aperture for the fibre and (iii) the acceptance angle in the air for the fibre
355 6 A refractive index of core for step index fibre is 1.52, diameter is 2.9 μm and a fractional 3
difference of refractive index is 0.0007. It is operated at a wavelength of 1.3 μm. Find the
number of modes the fibre will support
356 6 Calculate the NA, the acceptance angle of the fibre having n1 =1.48 and n2 = 1.43. 3
357 6 An optical fibre core and its cladding have refractive indexes of 1.545 and1.495 respectively. 3
Calculate the critical angle øc, acceptance angle øin(max) and numerical aperture.

358 6 A step index fibre has a numerical aperture of 0.26, a core of refractive index 1.5 and 3
diameter of 100μm. Calculate
(i) the refractive index of the cladding,
(ii) the acceptance angle, and
(iii) the maximum number of modes with a wavelength of 1μm that the fibre can carry.

359 6 A light ray enters from air to fibre. The refractive index of air is 1. The refractive index of 3
core is 1.5 (n1) and cladding is 1.48 (n2), find: (i) the critical angle (ii) fractional
refractive index (iii)acceptance angle (iv) numerical aperture.

Page 7 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
360 6 Calculate the refractive index of the core and cladding material of an optical fibre with 3
numerical aperture 0.11 and relative refractive index difference 0.015.
361 6 Acceptance angle depends on________ D 1 Diameter of core Material Diameter of cladding Both A and B
362 6 State the types of the optical fibres Based of 1
Materials
Based on
Modes of
propagati
on
Based on
Index
profile
363 6 We prefer ______ fibre for short distance communication B 1 Single mode Multi mode Dual mode None of these
364 6 If light takes more than one path to propagate down the cable, it is called a ______fibre A 1 Multi mode Single mode Dual mode None of these

365 6 _______ fibre has a uniform refractive index C 1 Multimode graded-index Multimode step-index Singlemode step-index None of these
fibre fibre fibre
366 6 Which of the following has more distortion? C 1 Singlemode step index Graded index Multimode step index None of these
367 6 Multimode step index fibre has a large core diameter of range is ___________ A 1 100 to 300 μm 100 to 300 nm 200 to 500 μm 200 to 500 nm
368 6 The performance characteristics of multimode graded index fibres is ___________ A 1 Better than multimode Same as multimode step Lesser than multimode Negligible
step index fibre index fibre step index fibre
369 6 What are the types of fibres on the basis of materials? Plastic 1
core with
plasctic
cladding
Glass core
with
plastic
cladding
Glass core
with glass
cladding

370 6 What are the types of fibres on the basis of modes of propagation? Singlemod 1
e&
Multimod
e
371 6 What are the types of fibres on the basis of index profile? Step- 1
index &
Graded
index
372 6 What is V-number? Define it. 1
373 6 Distinguish between Singlemode and Multimode optical fibre 4
374 6 List the differences between step index and graded index optical fibre. 4
375 6 What do you understand by index profile? List out the difference between step and graded 4
index fibre.
376 6 Classify the fibres on the basis of refractive index profile, on the basis of modes of 7
propagation and on the basis of materials
377 6 Explain the different types of fibres based on (i) material (ii) mode and (iii) index profile 7

378 6 Explain the following configuration with diagrams (i) Multimode Step-Index fibre (ii) 7
Multimode Graded-Index fibre.
379 6 Explain in detail, the three major fibre configurations with diagrams and applications. 7

380 6 Which type of fibre is not possible? D 1 Plastic fibre Glass fibre Plastic clad silica Silica clad plastic
381 6 On the basis of modes of propagation and index profile, which fibre is not possible? B 1 Singlemode step index Singlemode graded Multimode step index Multimode graded index
index
382 6 No. of modes of propagation for a multimode graded index fibre can be expressed as A 1 Nstep/2 Ngraded/2 2Nstep Nstep/4
______
383 6 Multimode graded index fibre has _______ bandwidth and _______ numerical aperture. C 1 High, low Low, low High, high Low high

384 6 In case of multimode step index fibre, pulse dispersion is _______ and attenuation is A 1 More, less Less, more More, more Less, less
_______.
385 6 What is fibre optic communication link? 1
386 6 What are the important components iof fibre optic communication link? Transmitt 1
er, fibre
optic
cable,
receiver
387 6 With a neat block diagram explain fibre optic communication link 5
388 6 Which of the following is not a component of the transmitter? D 1 Voltage to current LED Source to fibre coupler Amplifier
converter
389 6 Which of the following is true? A 1 Only 1 is true Only 2 is true Both are true Both are false
1. The current to voltage converter transforms changes in detector current to changes in
output signal voltage
2. Amplifier is a part of transmitter
390 7 A semiconductor has generally ___________ valence electrons C 1 2 3 4 6
391 7 When a pure semiconductor is heated, its resistance __________ B 1 Increases Decreases Remains the same Can't say
392 7 The strength of a semiconductor crystal comes from ________ C 1 Forces between nuclei Forces between protons Electron-pair bonds None of these

393 7 When a pentavalent impurity is added to a pure semiconductor, it becomes_______ D 1 Insulator Intrinsic semiconductor P-type semiconductor N-type semiconductor

394 7 Addition of pentavalent impurity to a semiconductor creates many______ A 1 Free electrons Holes Bound electrons Valence electrons
395 7 An n-type semiconductor is______ C 1 Positivel charged Negatively charged Eelectrically neutral None of these
396 7 Addition of trivalent impurity to a semiconductor creates many_______ B 1 Free electrons Holes Bound electrons Valence electrons
397 7 As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor C 1 Increases Remains the same Decreases Can't say

398 7 A semiconductor is formed by_________ bonds. C 1 Coordinate Electrovalent Covalent None of these

Page 8 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
399 7 A semiconductor has __________ temperature coefficient of resistance. C 1 Positive Zero Negative Can’t say
400 7 In an N-type silicon, which of the following statement is true? D 1 Electrons are majority Electrons are minority Holes are majority Holes are minority
carriers and trivalent carriers and pentavalent carriers and trivalent carriers and pentavalent
atoms are the dopants atoms are the dopants atoms are the dopants atoms are the dopants

401 7 In an P-type silicon, which of the following statement is true: C 1 Electrons are majority Electrons are minority Holes are majority Holes are minority
carriers and trivalent carriers and pentavalent carriers and trivalent carriers and pentavalent
atoms are the dopants atoms are the dopants atoms are the dopants atoms are the dopants

402 7 How does a semiconductor behave at absolute zero? B 1 Conductor Insulator Semiconductor Protection device
403 7 What are the charge carriers in semiconductors? A 1 Electrons and holes Only electrons Only holes Charges
404 7 What type of material is obtained when an intrinsic semiconductor is doped with A 1 N-type semiconductor P-type semiconductor Conductor Insulator
pentavalent impurity?
405 7 What type of material is obtained when an intrinsic semiconductor is doped with trivalent B 1 N-type semiconductor P-type semiconductor Conductor Insulator
impurity?
406 7 What is a hole in a semiconductor? 1
407 7 Explain why does a pure semiconductor behave like an insulator at room temperature? 3

408 7 What are donor and acceptor impurities? Give examples 3

409 7 Classify semiconductors on the basis of different characteristics 4
410 7 Discuss properties of semiconductors. 4
411 7 Explain intrinsic and extrinsic semiconductors with examples. 5
412 7 Differentiate between intrinsic and extrinsic semiconductors. 4
413 7 Differentiate between P-type and N-type semiconductors. 4
414 7 In an intrinsic semiconductor, the mobility of electrons in the conduction band is_________ C 1 Less than the mobility of zero Greater than the None of these
holes in the valence mobility of holes in the
band valence band
415 7 Derive an expression for density of holes in valence band of an Intrinsic semiconductor. 7

416 7 Derive an expression for density of electrons in conduction band of an Intrinsic 7

semiconductor.
417 7 Explain the variation of Fermi level with temperature for an intrinsic semiconductor. 5
418 7 Obtain expression for majority carriers in N-type semiconductor. 7
419 7 Obtain expression for majority carriers in P-type semiconductor. 7
420 7 Explain the variation of Fermi level with temperature and concentration for N-type 5
semiconductor
421 7 Explain the variation of Fermi level with temperature and concentration for P-type 5
semiconductor
422 7 What is law of mass action? Explain 4
423 7 Derive an expression for conductivity of intrinsic semiconductor. Also brief, on what factors 4
it depends.
424 7 -4 -1 -1 3
For intrinsic silicon the room temperature electrical conductivity is 4x10 Ω m .The
electron and hole mobilities are 0.14 and 0.040 m-2V-1S-1 respectively Compute
electron and hole concentrations at room temperature.
425 7 For intrinsic carrier density at room temperature in Ge is 2.37x1019, electrons and hole 3
mobilities are 0.38 and 0.18 m2V-1S-1 respectively. Calculate its resistivity.
426 7 2 -1 -1 3
The electron and hole mobilities in In-Sb semiconductor are band 6 and 0.2 m V S . At
-4
room temperature the resistivity of In-Sb is 2x10 Ωm. Assuming material is
intrinsic determine carrier density at room temperature.
427 7 Suppose that effective mass of holes in a material is 4 times the mass of electrons. At what 3
temperature would Fermi level be shifted by 10% from the middle of forbidden energy gap.
Given Eg= 1eV.
428 7 Find the resistance of an intrinsic Ge rod 1 cm long. 1 mm wide and 1 mm thick at 300 K. For 3
19 3 2 -1 -1 2 -1 -1.
Ge, ni = 2.5 *10 /m , µh = 0.39 m V s and µh = 0.19 m V S
429 7 o -1 -1 o 4
At 20 C, conductivity of Ge is 2 Ω m . Find the conductivity of Ge at 40 C. Band
gap is given as 0.72eV.
430 7 The conductivity of a semiconductor at 20oC is 250Ω-1 m- 1 and at 100oC is 1100Ω-1 m-1. Find 4
the band gap energy.
19 3 23 3
431 7 In a p-type Ge, ni=2.1x10 /m , density of boron is 4.5x10 atoms/m . The electron and 3
2 -1 -1
hole mobilities are 0.4 and 0.2 m V s respectively. Find the conductivity before and after
addition of boron atoms.
432 7 Find the density of impurity atoms that must be added to an intrinsic crystal in order to 4
convert it into 10 Ω cm p-type silicon and 10 Ω cm n-type silicon. Also find the concentration
10 3 2 -1 -1
of minority charge carriers in each case. For Si, ni is 1.5x10 /cm , µe is 1350 cm V s
and µh is 480cm2 V-1s-1.
433 7 If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec, the mobility(in SI A 1 0.05 0.55 500 None of these
unit) is_________
434 7 Indirect recombination is also known as______ A 1 Phonon transition Photon transition Auger recombination None of these
435 7 Recombination process in InGaAs is in the form of _________ B 1 Photons Phonons Transferred to third None of these
electron
436 7 Recombination in GaAsP is in the form of _________ A 1 Photons Phonons Transferred to third None of these
electron
437 7 The process where EHP is formed is called _______________ A 1 Carrier generation Carrier diffusion Carrier recombination None of these
438 7 ______________ is a process where EHP are annihilated C 1 Carrier generation Carrier diffusion Carrier recombination None of these
439 7 Which process dominates in case of low carrier concentration? C 1 Phonon transition Photon transition Carrier generation None of these
440 7 What do you mean by Carrier generation and Recombination? 3
441 7 What do you mean by Trap-assisted transition? Why is it non-radiative? 4
442 7 Write a short note on direct recombination. Why is called band-to-band transition? 4
443 7 Drift current is due to ___________ D 1 Random motion of Random motion of holes Recombination of holes Applied electric field
electrons and electrons
444 7 What makes up the total current in a semi-conductor? C 1 Only diffusion current Only drift current Drift+diffusion current Drift+diffusion
current+biasing current

445 7 Diffusion current is due to ___________ C 1 Random motion of Random motion of holes Variation in carrier Applied electric field
electrons concentration

Page 9 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
446 7 Why does a gradient occur in a semi-conductor? D 1 Because of current flow Because of diffusion Because of drift current Because of difference in
current concentrations
447 7 Write a short note on Drift current. 5
448 7 What do you mean by Diffusion current? Explain. 5
449 7 Differentiate between drift and diffusion currents in semiconductors. Which is more 5
present in semiconductors?
450 7 In the Hall Effect, the directions of electric field and magnetic field are ________ to each B 1 Parallel Perpendicular Opposite None of these
other.
451 7 Which of the following parameters can’t be found with Hall Effect? C 1 Polarity Conductivity Area of device Carrier concentration
452 7 Define Hall effect. 1
453 7 Define Hall coefficient. 1
454 7 Choose correct Lorentz force equation in hall effect D 1 F = qeB F = qsB F = qlB F = qvB
455 7 Explain Hall effect with suitable diagram. 3
456 7 What is Hall voltage? Derive its expression. 5
457 7 What is Hall coefficient? Explain how is it related to Hall voltage? 3
458 7 A semiconductor crystal 12mm long, 1mm wide and 1mm thick has a magnetic flux density 4
of 0.5 Wb /m2, applied from to back, and is perpendicular to largest faces. When a current of
20 mA flows lengthwise through the specimen, the voltage measured across its width is
found to be 37µV. What is the Hall coefficient of semiconductor and the density of charge
carrier?
459 7 2 4
2.0 cm wide and 1.0 mm thick copper strip is placed in a magnetic field 1.5Wb/m
perpendicular to the strip. Suppose a current of 200A is set up in the strip what will
be the Hall potential appeared across the strip? (n=8.4x10 28 electrons /m3).
460 8 In a PN junction with no external voltage, the electric field between acceptor and donor ion B 1 Peak Barrier Threshold Path
is called ______
461 8 For a PN junction diode, the current in reverse bias may be in ______ D 1 Few milliamperes Between 0.2 A and 15 A Few amperes Few micro or nano
amperes
462 8 When a PN junction is reverse biased______ C 1 Holes and electrons tend The barrier tends to Holes and electrons tend None of these
to concentrate towards break down to move away from the
the junction junction
463 8 In an unbiased PN junction, _______ B 1 The junction current is The junction current at The junction current The junction current at
due to minority carriers equilibrium is zero as reduces with rise in equilibrium is zero as
only equal but opposite temperature charges do not cross the
carriers are crossing the junction
junction
464 8 In a PN junction when the applied voltage overcomes the ........ potential, the diode current D 1 Depletion, negative bias Reverse, reverse bias Resistance, reverse bias Barrier, forward bias
is large, which is known as .............
465 8 A PN junction _____ C 1 Has low resistance in Has high resistance in Conducts in forward Conducts in reverse
forward as well as forward as well as direction only direction only
reverse directions reverse directions
466 8 What is meant by potential barrier across a p-n junction? How is it formed? 3
467 8 Explain what is zero bias of a PN Junction diode? 4
468 8 What do you mean by external bias of a PN Junction diode? Explain forward and reverse 7
bias of a PN Junction diode.
469 8 Define: a) Depletion layer b) Threshold voltage c) Leakage current 3
470 8 What do you mean by V-I characteristics of a PN Junction diode? Explain both the cases 7
with the help of suitable diagrams.
471 8 Briefly discuss some applications of PN Junction diode. 3
472 8 When a forward bias is applied to a p-n junction, it______ C 1 raises the potential reduces the majority lowers the potential None of the above.
barrier. carrier current to zero
barrier
473 8 In an unbiased PN Junction, holes diffuse from P region to N region because_____ C 1 free electrons in the n- they move across the hole concentration in p- All of these
region attract them junction by the potential
region is more as
difference. compared to n-region
474 8 When a PN Junction diode is reverse biased, what causes current across the junction? C 1 Diffusion of charges Nature of material Drift of charges Bothe drift and diffusion
of charges
475 8 In the forward bias arrangements of a PN junction diode B 1 The N end is connected The P end is connected The direction of the The P end is connected
to the positive terminal to the positive terminal current is from N end to to the negative terminal
of the battery of the battery the P end in the diode of the battery

476 8 The electrical resistance of the depletion layer is large because A 1 It has no change carriers It has a large number of It contains electrons as It has holes as charge
charge carriers charge carriers carriers
477 8 On increasing the reverse bias to a large value in a PN junction diode, current C 1 Increases slowly Remains fixed Suddenly increases Decreases slowly
478 8 The reverse current in a diode is of the order of _______ C 1 kA mA μA A
479 8 The fermi level of a PN Junction diode in equilibrium is______ C 1 Close to Conduction Close to Valence band Aligned in centre None of these
band
480 8 What happens to Fermi level when the PN Junction diode is forward biased? B 1 Moves towards Valence Moves towards Aligned in centre None of these
band Conduction band
481 8 Explain the energy band digram of PN Junction diode in zero bias 3
482 8 Explain forward and reverse bias of PN Junction diode with the help of Energy band 7
diagram.
483 8 The breakdown mechanism in a lightly doped PN Junction diode is called________ B 1 Zener breakdown Avalanche breakdown High voltage breakdown Tunneling

484 8 The breakdown mechanism that occurs in a narrow junction diode is called________ A 1 Zener breakdown Avalanche breakdown Reverse breakdown Tunneling
485 8 Zener breakdown occurs _____ B 1 mostly in germanium due to very strong in lightly doped diodes due to thermally
diodes electric field generated minority
carriers
486 8 Avalanche breakdown primarily depends on the phenomenon of_____ A 1 collision doping ionization recombination
487 8 Avalanche breakdown occurs _____ A 1 due to thermally due to very strong in heavily doped diodes Both B & C
generated minority electric field
carriers
488 8 Zener breakdown is________ D 1 gradual exponential linear sudden
489 8 How is the breakdown region set during the manufacturing of the diode? B 1 By controlling the size of By controlling the By managing the biasing All of the above
the diode doping of the diode of diode
490 8 Write a shortnote on Avalanche breakdown 5
491 8 What is Zener breakdown? How does it occur? Explain 5
492 8 Zener diode is used as a_________ D 1 Rectifier Amplifier Switch Voltage regulator

Page 10 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
493 8 A zener diode when biased correctly _________ C 1 Acts as a fixed resistance Never overheats Has a constant voltage Has a constant current
across it passing through it
494 8 Zener diode is designed to specifically work in which region without getting damaged? B 1 Active region Breakdown region Forward bias Reverse bias

495 8 What is the level of doping in Zener Diode? B 1 Lightly Doped Heavily Doped Moderately doped No doping
496 8 The depletion region of the Zener diode is ____________ C 1 Thick Normal Very thin Very thick
497 8 How is the depletion layer of a zener diode? Why does it have a very strong electric field? 3
Explain
498 8 What is a zener diode? Explain its construction and working. 7
499 8 In the breakdown region, a zener diode behaves like a _______ source A 1 Constant voltage Constant current Constant resistance None of the above
500 8 A zener diode is a _______ device A 1 Non linear Linear Amplifying None of the above
501 8 Discuss some applications of Zener diode 3
502 9 EHP is generated in LED by_________ A 1 Electric current Radiation High energy electrons None of these
503 9 LED operates in __________ C 1 Zero bias Reverse bias Forward bias None of these
504 9 Which process of the Electron-hole pair is responsible for emitting of light? C 1 Generation Diffusion Recombination None of these
505 9 When forward biased, LED emits light because of _________ A 1 Recombination of Light generated in Light produced by All of the above reasons
carriers breaking the covalent collisions
bonds
506 9 Which of the following materials can be used to produce infrared LED? B 1 Si GaAs CdS PbS
507 9 Which of the following is not a characteristic of LED? B 1 Fast action High Warm-up time Low operational voltage Long life

508 9 The colour of emitted light from LED depends on __________ C 1 Physical dimensions of No. of available carriers Type of semiconductor No. of recombinations
LED materials used taking place
509 9 The advantage of LED is ________ D 1 Long life Fast on-off switching Low operating voltage All of the above
510 9 Explain the working principle of an LED with suitable diagram. 3
511 9 What is an LED? Explain its construction and working with the help of suitable diagrams. 7

512 9 Why is LED more efficient than conventional light? Also discuss some advantages of LED. 4

513 9 List down some applications of LED 3

514 9 What is the full form of the LDR Sensor? D 1 Lithium Diode Resistor Light Diaphragm Lithium Disk Resistor Light Dependent
Resistor Resistor
515 9 What is the use of the LDR Sensor? C 1 Monitors Motion Monitors air pressure Monitors Light Intensity Monitors current

516 9 How many pins are present in the LDR Sensor? B 1 1 2 3 4

517 9 Which one of the following materials can be used for making an LDR? A 1 Lead Sulfide Pure Aluminium Iron ore Aluminium oxide
518 9 In darkness, the LDR has _______ D 1 High current Low resistance Both A and B High resistance
519 9 What will be resistance of LDR if light intensity increases? B 1 Increase Decreases Remains same Becomes infinity
520 9 Explain the working principle of LDR. 3
521 9 What materials are used in construction of LDR? Also explain its construction and working. 7

522 9 EHP is generated in photodiode by__________ B 1 Electric current Radiation High energy electrons None of these
523 9 The leakage current in photodiode is called ______ C 1 Photocurrent Forward current Dark current None of these
524 9 When light increases, the reverse minority current in a photodiode ________ A 1 Increases Decreases Is unaffected Changes direction
525 9 A photodiode is normally ______ B 1 Forward biased Reverser biased Neither forward nor A light emitter
reverse biased
526 9 On what principle does a photodiode work? Explain it briefly. 3
527 9 Explain the construction and working of a Photodiode. 7
528 9 Briefly discuss some applications of a photodiode. 3
529 9 When the source of light is not sun light then the photo voltaic cell is used as_________ C 1 Photodiode Photovoltaic cell Photo detector Photo transmitter

530 9 A solar cell converts light energy into __________ A 1 Electrical energy Thermal energy Light energy None of these
531 9 Solar cell works on the principle of _______ A 1 Photovoltaic effect Photoelectric effect Photo conductive effect None of these

532 9 Solar cells are mainly made of______ A 1 Silicon Germanium Gallium arsenide Cadmium sulphide
533 9 The solar or photo voltaic cell converts_________ B 1 Chemical energy to Solar radiation into Solar radiation into Thermal energy into
electrical energy electrical energy thermal energy electrical energy
534 9 A solar cell is a PN Junction operating in______ C 1 Reverse bias condition Forward bias condition Unbiased condition In both forward and
reverse condition
535 9 What is the difference between Photodiode and Solar cell? B 1 No External Bias in No External Bias in Solar Larger surface area in No difference
Photodiode cell photodiode
536 9 Which of the following should not be a characteristic of a solar cell material? C 1 High Absorption High Conductivity High Energy Band High Availability
537 9 Full form of FF in the solar cell is ____________ B 1 Face factor Fill factor Form factor None of these
538 9 What is Photovoltaic effect? Explain briefly with a diagram. 3
539 9 What is a solar cell? Explain its construction and working. 7
540 9 Explain the parameters of a solar cell and discuss about its efficiency. 5
541 9 What are optical losses in a solar cell? Suggest some remedies for the same. 5
542 9 List down some merits and demerits of a solar cell 4
543 9 Briefly discuss some applications of solar cell. 5
544 9 If the work function of a metal is less than the semiconductor it is a ______ junction. D 1 Schottky Ohmic rectifying both a and c
545 9 Which of the below mentioned statements is false regarding Schottky diodes? C 1 Schottky diodes have a There is no storage of The majority charge Schottky diodes can be
Al-Silicon junction charges in a Schottky carriers in a Schottky switched off faster than
diode diode are holes a p-n junction diode of
the same rating

546 9 Which of the following are/is the majority charge carriers in a Schottky diode? B 1 Holes Electrons Both holes & Electrons None of these
carry equal current
547 9 In a Schottky diode, the silcon is usually __________ A 1 N-type P-type Undoped Silicon is not used
548 9 As compared to a p-n junction diode(of the same rating), a Schottky diode has ___________ C 1 Higher cut-in voltage Lower reverse leakage Higher operating Higher switching time
current frequency
549 9 Diodes used primarily in high frequency devices and fast switching applications are called B 1 Current regulating Schottky diodes PIN diodes Zener diodes
_________ diodes
550 9 What is a Schottky junction? Explain how is it formed? 4
551 9 Explain the forward and reverse biasing of a Schottky junction. 7
552 9 What is a Ohmic junction? Explain how is it formed? 4
553 9 Write a short note on Schottky diode. Also list down some of its applications. 7
554 10 Area A of a uniform slab can be given as ____________ A 1 t*W t/W L*W L*t

Page 11 of 12
 L.J Institute of Engineering and Technology
Physics Question Bank
Note :
This question bank is only for reference purpose . L.J.U Test question paper may not be completely set from this question bank.

Unit
MCQ
Sr No Numb Question_Text Marks Option A Option B Option C Option D
Answer
er
555 10 What is the sheet resistance of the conducting material? C 1 RS = resistivity/length RS = resistivity/width RS = resistivity/thickness None of these

556 10 Sheet resistance of a semiconductor is ___________ B 1 An inherent property of a function of thickness also called as Specific All of the mentioned
the material of the material Resistance
557 10 Sheet resistance of semiconductor is directly measured using ___________ C 1 Ohmmeter Non-contact eddy Four probe method Any of the three
current based testing
device
558 10 Unit of sheet resistance is_____ C 1 Ω/m Ω*m Ω/square Ω*square
559 10 ____ shows the ability to travel charge along thin films in conductor and semiconductor. C 1 Conductor resistance Specimen resistance Sheet resistance Module resistance

560 10 Which parameter(s) can be determined from sheet resistance? C 1 Resistivity Conductivity Both A and B None of these
561 10 Which measuring instruments are use in Four Probe method? A 1 Ammeter and Voltmeter Ammeter only Voltmeter only None of these

562 10 In Four Probe method, for bulk material hemisphere area considered as____ B 1 2πr^2 2πx^2 2πr 2π^2x
563 10 Four Probe method use for measuring _________ D 1 Capacitance Inductance Resistance Impedance
564 10 Identify application which is not suitable with Four Probe method. D 1 Remote sensing area Fuel cell bipolar plate Resistance Inductance controlling
thermometers
565 10 A requirement of four point probe method of determining resistivity is A 1 Current must be Current is not constant Cross-section along the Current source is
constant sample is constant connected between
inner two probes
566 10 What is the benefit of using Four probe method over Two probe method? 3
567 10 Discuss the Four probe method for measuring sheet resistance of Bulk sample. 5
568 10 Discuss the Four probe method for measuring sheet resistance of Thin sheet. 5
569 10 What are the merits and demerits of Four probe method? Also list down some applications 4
of this method.
570 10 Vander Pauw measurement use for _____measurement. A 1 Resistivity Inductance Capacitance Conductance
571 10 Which of the following parameters can't be measured by Van der Pauw method? D 1 Resistivity Doping type Carrier concentration Conductance
572 10 Identify the condition which is not applicable during Vander Pauw measurement. C 1 Homogeneous sample Less thickness Less capacitance Uniform thickness
573 10 What are the conditions to be satisfied while using Van der method? 3
574 10 Write a short note on Van der Pauw method for resistivity measurement. 7
575 10 Explain Hall measurements of Van der Pauw method. 7
576 10 Discuss the advantages and disadvantages of Van der Pauw method. 4
577 10 In Hot probe method, if the carriers are positive, the current flows in _______ direction. B 1 Same Opposite Both A and B None of these

578 10 In Hot point probe measurement if hot side is negative, the sample is ___type A 1 P-type N-type Not doped Can't say
579 10 How many contacts are needed in Hot probe method? B 1 1 2 3 4
580 10 Which method is used to determine whether the sample is P type or N type? B 1 Cold point probe Hot point probe Wide point probe Area point probe
measurement measurement measurement measurement
581 10 Explain the Hot probe method for finding the doping type, with suitable diagrams. 5

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