Professional Documents
Culture Documents
Band theory
Bang gap
Eg
B
MAC
egtpav.is sh
Insulator
Concentration
N
Neha
has 1024 atoms
semi cond
An intrinsic
Ne 1081m
mi
per spring
is now doped p type
It
Calculate new Ne Inn
6
1081ms 10 X 1024 10181ms
Ni Doping
holes a doping holes
Intrinsic 10 10 3
1018 Me ME
So Nha 8
Conductivity
velocity
Drift
E Electric field
Her I
j conductivity
e
ne
neg
mobility
neeMethuen
Forfend O
DIODE
Diffusion
ht
I
Fdiff Current
Depletion
hinders MnFy h Drist
et
diffusion
Drift
HIIIII
KILN Potential
Barrier
n type p type n type
p type
Forward
Biased
incr
YEE Reverse Biasing
Diffusion Inert
Depletion layer
shrinks
insist
fg
in insist
é th
Recombination
of
constantly created
New e h pairs
everywhere
recombine but
Old e h pairs
outside depletion layer
only in depletion
Electric field
separates them
layer
Characteristics
V
Yunee
07 V for Si
0.3 V for he
Find current if diode is
ideal
puffy
i
ii Si based
in Ge based
i 10 2 5A
40 9
23 4.65A
2071
i
4.85 A
025
10 912
went
G
Tkr through zener
Effie
104 has
of zener
511
Up
5
i 103 5A
glov31
I is A
lot
Éffir
It
i i i
2Gt
went
Q
Ftr through zener
Effi
104 r has
If Zener 511
VB
diode is in breakdown
Assume
A 12 513 A
i 517
in
ÉPÉE i i in 202 A
a contradiction
There's is
Assumption wrong
is not in breakdown
Diode
t
Miki
in Irie
Vpiodelix3r
tofig 3
Retifier half
q y
wave
rectifier
3 Effy
full
rectifier
i
to D C
AC
ten t
ten smooth
d To make graph
use capacitor
EMMET team
C Changing of
capacities
Dis Discharging
discharge of capacitor should
time for than time
be significantly greater
Ac supply
period
of 2
RC 77
Time const C
ten
A rectifier has input of frequency
What should be approx
5043
smooth
range of capacitance for
R tour
D.C output
28
Re
I
C
E
RC
C 0.2mF
C
Expo or 100mF
I 10mF
or IF
Transistor doping
lowest
Biased
herward
small
it is biasing
small ament forward
even after is thin
base very
because
is small
Base currentsmall
hence
remains
common base
e tend to jump from
into
F É
emitter directly
collector So this
buttery encoring
rwm
Common emitter
EÉÉI
High current
less current
skiff
p in
BE
ECP
pup
npn
Ic IctIB IE
2
2
B E
calculate Ye
1000s
g
stand
it
20 50 looorxima VB
Vet
is reverse
31 V Base Emitter biased
VE YB
Biasing of Transistor
Input
1 Base is available
If output
is available
2 collector
If roles
3 Emitter can change
II
output
Input FILM
VBB Vcc
KD
output
Input
FILM
VEE Vec
ID
T
HA
VBB VEE
Transistor as CE Amplifier
35
RBE Rin
qq.jpgf g
to speaker
commit Lifo BB
0
are
interested in
we
Jin I But
BBI sin Yin
I BIB BS in B Yin
Four Rin
Voltage gain
Your Vin BRout Power gain
Ring
Current gain
Tout sin
P pl Roff
CB Amplifier
Jin Vin Rin
Litt
Vi On Jin
Lout
TEN IE FB
E
so Jin
TT
gyyy Four Lin
MITT Re
Vow
I T Esch
in Active saturation
cutoff Region Region
Region
Vin high Irs high
out
Saturation
Lehigh Transistor
is conducting
orison
I
Collector
Emitter
I have same
i or
voltage
in Active saturation they behave
cutoff region Region like short
Region circuit
Vout
is
P E
item
this region
in Active Saturation
Cutoff Region Region
Region
as switch in
Vout Transistor saturation
Cut off
as amplifier
i Lyasistor
in Active region
in Active saturating
cutoff Region Region
Region
LogicGates
OR NOT
AND
X
A Do
D
ABI X B
X F
X ATB
X AB
B X A X
X A
A B O O o
O
O O O
I 0 0 1 0
1 O
0 0 t t
O 1
t t t t t t
NAND NOR
Do
X F X
B
X AtB AB
AB ATE
X
B X
A
B X O O
A
1 0 0
O O I
1 O O 1 O
O 1 I
1 I 0
I I 0
XI X NOR IAAF
Y
I
IT ABtAT
B
Y
AB
ADLAI
A B X Y B ATE
O O O
I 0 I B ATB
0 1 I
1 I o Y ABtA
a
I
0 0 I
ftp.x
I 0 I
0 1 I
AT
1 I 1
CABICABT
X
AT AT
ATB ATE
A It ATB
AIA BTR
I I
Identities Atb AB AB B
AA O At A 1
Ita I
Circuitsfortogicates
Orge
EÉ
Y É
O
A
AE it
1 X 1
7
AND aate o
m
IIII.IE
fEs
Is ÉÉÉv
A I
B O
x O
s
ANDCate
to
EI EE
IYEs
in this
A No current
B 1 case
x I
A
Notate
CE Switch pv
Vigmprovour
t
LIII
Vines
UFO
Vous
Vow
o
5
Ry
vin
saturation
win condition for
has properties of
saturation
well as active region
as
Von 0 P EEL
Vac Fro
EÉÉIIÉ
Vous
0 5 Tex 1000
05 1 I 5mA
MBE Vin IBX
05 1 I mA
Vin Foxox
v31