Chapter 4-Transistors

Prob 4-1 pi := 4 atan ( 1)

pi = 3.142
−3
VDD := 100 RD := 10⋅ 10 −3
Kn := 25.3⋅ 10 VT := 4.83

VDS := 3.5 VGS := 10

Using Eq. (4.2)

⎣ ( )
ID := Kn⋅ ⎡2⋅ VGS − VT ⋅ VDS − VDS ⎤
2
⎦ ID = 0.606

VDS
RDS := RDS = 5.779
ID

VDS_cr := VGS − VT VDS_cr = 5.17

Prob 4-2 pi := 4 atan ( 1) pi = 3.142

−3
VDD := 100 RD := 10⋅ 10 −3
Kn := 25.3⋅ 10 VT := 4.83

VDS := 3.5 VGS := 10

Using Eq. (4.3)

(
ID := Kn⋅ 2⋅ VGS − VT ⋅ VDS ) ID = 0.916

VDS
RDS := RDS = 3.823
ID

VDS_cr := VGS − VT VDS_cr = 5.17

Prob 4-3
−3
VDD := 100 RD := 10⋅ 10 −3
Kn := 25.3⋅ 10 VT := 4.83

VDS := 3.5 VGS := 10

Using Eq. (4.3)

⎣ (
ID ( x) := Kn⋅ ⎡2⋅ VGS − VT ⋅ x − x ⎤
2
⎦)
Chapter 4-Transistors
Page #4-1
 Plot of ID versus VDS
1

0.8
Drain current, ID

0.6
I D ( x)

0.4

0.2

0
0 2 4 6 8 10
x
Drain-source voltage

Plot of ID versus VDS

100

80
Drain current, ID

60
x
I D ( x)

40

20

0
0 2 4 6 8 10
x
Drain-source voltage

Chapter 4-Transistors
Page #4-2
 Prob 4-4

−3
VDD := 100 RD := 10⋅ 10 −3
Kn := 25.3⋅ 10 VT := 4.83

VDS := 3.5 VGS := 10

Using Eq. (4.3)

(
ID ( x) := Kn⋅ ⎡2⋅ VGS − VT ⋅ x⎤
⎣ ⎦ )
Plot of ID versus VDS
3

2.5

2
Drain current, ID

I D ( x)
1.5

0.5

0
0 2 4 6 8 10
x
Drain-source voltage

Chapter 4-Transistors
Page #4-3
 Plot of ID versus VDS
5

4
Drain current, ID

3
x
I D ( x)

0
0 2 4 6 8 10
x
Drain-source voltage

Prob 4-5

−3
VDD := 100 RD := 10⋅ 10 −3
Kn := 25.3⋅ 10 VT := 4.83
VDS := 3.5 VGS := 10
Using Eq. (4.3)
1
RDS ( x) :=
(
Kn⋅ ⎡2⋅ VGS − VT ⎤
⎣ ⎦ )

Chapter 4-Transistors
Page #4-4
 Plot of ID versus VDS
5

4
Drain-Source resistance

3
RDS ( x)

0
0 2 4 6 8 10
x
Drain-source voltage

Prob 4-6

VDD := 100 −3 −3
RD := 10⋅ 10 Kn := 25.3⋅ 10 VT := 4.83

VDS := 3.5 VGS := 10

Using Eq. (4.8)
gm ( x) := 2⋅ Kn⋅ VDS

Chapter 4-Transistors
Page #4-5
 Plot of gm versus VGS

0.15
Transconductance

gm ( x)
0.1

0.05

0
0 2 4 6 8 10
x
Drain-source voltage
Prob 4-7

VCC := 100 β F_min := 10 β F_max := 60 RC := 6 ODF := 20

VB := 8 VCE_sat := 2.5 VBE_sat := 1.75

From Eq. (4-28)

VCC − VCE_sat
ICS := ICS = 16.25
RC

From Eq. (4-29)

ICS
IBS := IBS = 1.625
β F_min

From Eq. (4-30)

IB := ODF⋅ IBS IB = 32.5

Chapter 4-Transistors
Page #4-6
 ( a) From Eq. (4-23)

VB − VBE_sat
RB := RB = 0.192
IB

( b) From Eq. (4-31)

ICS
β forced := β forced = 0.5
IB

( c) From Eq. (4-32)

PT := VBE_sat⋅ IB + VCE_sat⋅ ICS PT = 97.5

Prob 4-8

VCC := 40 β F_min := 12 β F_max := 75 RC := 1.2

VB := 6 VCE_sat := 1.2 VBE_sat := 1.6 RB := 0.7

From Eq. (4-28)

VCC − VCE_sat
ICS := ICS = 32.333
RC

From Eq. (4-23 and 29)

ICS
IBS := IBS = 2.694
β F_min

VB − VBE_sat
IB := IB = 6.286
RB
Using Eq. (4-30)
IB
( a) ODF := ODF = 2.333
IBS

Chapter 4-Transistors
Page #4-7
 ( b) From Eq. (4-31)
ICS
β forced := β forced = 5.144
IB

( c) From Eq. (4-32)

PT := VBE_sat⋅ IB + VCE_sat⋅ ICS PT = 48.857

Prob 4-9

VCC := 220 VBE_sat := 3 IB := 8 VCE_sat := 2

−6 −6 −6
ICS := 100 −6 tr := 1⋅ 10 ts := 5⋅ 10 tf := 3⋅ 10
td := 0.5⋅ 10
3 k := 0.5 −3 1
fs := 10⋅ 10 ICEO := 3⋅ 10 T := −4
fs T = 1 × 10

kT := T⋅ k −5
kT = 5 × 10 tn := kT − tr − td −5
tn = 4.85 × 10

to := ( 1 − k) ⋅ T − ts − tf −5
to = 4.2 × 10

( a) Pc := ICEO⋅ VCC Pc = 0.66

From Eq. (4-35)

Pd := ICEO⋅ VCC⋅ td⋅ fs −3

Pd = 3.3 × 10
From Eq. (4-37)
tr⋅ VCC
tm := −7
(
2⋅ VCC − VCE_sat ) tm = 5.046 × 10

From Eq. (4-38)

2
VCC ⋅ ICS
Pp :=
( )
3
4⋅ VCC − VCE_sat Pp = 5.55 × 10

Chapter 4-Transistors
Page #4-8
 From Eq. (4-39)

⎡ VCC ⎛ VCE_sat − VCC ⎞⎤

Pr := fs⋅ ICS⋅ tr⋅ ⎢ +⎜ ⎟⎥ Pr = 37.333
⎣ 2 ⎝ 3 ⎠⎦

Pon := Pd + Pr Pon = 37.337

( b) Pc := VCE_sat⋅ ICS Pc = 200

From Eq. (4-41)

Pn := ICS⋅ VCE_sat⋅ tn⋅ fs Pn = 97

( c) From Eq. (4-41)

Ps := VCE_sat⋅ ICS⋅ ts⋅ fs Ps = 10

From Eq. (4-44)
VCC⋅ ICS
Pm := 3
4 Pm = 5.5 × 10

From Eq. (4-45)

VCC⋅ ICS⋅ tf ⋅ fs
Pf :=
6 Pf = 110

Poff := Ps + Pf Poff = 120

( d) Pc := VCC⋅ ICEO Pc = 0.66

From Eq. (4-47)

Po := ICEO⋅ VCC⋅ to⋅ fs Po = 0.277

( e) From Eq. (4-48)

PT := Pon + Pn + Poff + Po PT = 254.614

Chapter 4-Transistors
Page #4-9
 Prob 4-10
PT = 254.614
TJ := 150 TA := 30 RJC := 0.4 RCS := 0.05
Using Eq. (4-50)
TJ − TA
RSA := − RJC − RCS
PT RSA = 0.021

Prob 4-11

VCC := 220 VBE_sat := 3 IBS := 8 VCE_sat := 2

−6 −6 −6 −6
ICS := 100 td := 0.5⋅ 10 tr := 1⋅ 10 ts := 5⋅ 10 tf := 3⋅ 10
3 −3 1 −4
k := 0.5 fs := 10⋅ 10 ICEO := 3⋅ 10 T := T = 1 × 10
fs
−5
kT := T⋅ k kT = 5 × 10 tn := kT − tr − td −5
tn = 4.85 × 10
−5
to := ( 1 − k) ⋅ T − ts − tf to = 4.2 × 10
−6
ton := td + tr −5 toff := ts + tf toff = 8 × 10
tn = 4.85 × 10

Pb := IBS⋅ VBE_sat Pb = 24
From Eq. (4-49)

(
PB := IBS⋅ VBE_sat⋅ ton + tn + ts + tf ⋅ fs ) PB = 13.92

Prob 4-12

VCC := 220 VBE_sat := 2.3 IB := 8 VCE_sat := 1.4

−6 −6 −6 −6
ICS := 100 td := 0.1⋅ 10 tr := 0.45⋅ 10 ts := 3.2⋅ 10 tf := 1.1⋅ 10

3 k := 0.5 −3 1
fs := 10⋅ 10 ICEO := 3⋅ 10 T := −4
fs T = 1 × 10
kT := T⋅ k −5
kT = 5 × 10 tn := kT − tr − td −5
tn = 4.945 × 10
to := ( 1 − k) ⋅ T − ts − tf −5
to = 4.57 × 10

Chapter 4-Transistors
Page #4-10
 ( a) Pc := ICEO⋅ VCC Pc = 0.66

From Eq. (4-35)

Pd := ICEO⋅ VCC⋅ td⋅ fs −4

Pd = 6.6 × 10

( b) From Eq. (4-37)

tr⋅ VCC
tm := −7
(
2⋅ VCC − VCE_sat ) tm = 2.264 × 10

From Eq. (4-38)

2
VCC ⋅ ICS
Pp :=
( )
3
4⋅ VCC − VCE_sat Pp = 5.535 × 10

From Eq. (4-39)

⎡ VCC ⎛ VCE_sat − VCC ⎞⎤

Pr := fs⋅ ICS⋅ tr⋅ ⎢ +⎜ ⎟⎥ Pr = 16.71
⎣ 2 ⎝ 3 ⎠⎦

Pon := Pd + Pr Pon = 16.711

( b) Pc := VCE_sat⋅ ICS Pc = 140

From Eq. (4-41)

Pn := ICS⋅ VCE_sat⋅ tn⋅ fs Pn = 69.23

( b) From Eq. (4-42)

Ps := VCE_sat⋅ ICS⋅ ts⋅ fs Ps = 4.48

From Eq. (4-44)

VCC⋅ ICS
Pm := 3
4 Pm = 5.5 × 10

Chapter 4-Transistors
Page #4-11
 From Eq. (4-45)
VCC⋅ ICS⋅ tf ⋅ fs
Pf :=
6 Pf = 40.333

Poff := Ps + Pf Poff = 44.813

( d) Pc := VCC⋅ ICEO Pc = 0.66

From Eq. (4-47)

Po := ICEO⋅ VCC⋅ to⋅ fs Po = 0.302

( e) From Eq. (4-48)

PT := Pon + Pn + Poff + Po PT = 131.056

Prob 4-13 VCE_sat := 1.4

−6 −3
VDD := 40 IDS := 25 IDSS := 250⋅ 10 RDS := 28⋅ 10

−9 −9 −9
VGS := 10 td_on := 25⋅ 10 tr := 60⋅ 10 td_off := 70⋅ 10
−9 3
tf := 25⋅ 10 fs := 20⋅ 10 k := 0.6 1
T := −5
fs T = 5 × 10
−5
k⋅ T = 3 × 10 tn := k⋅ T − tr − td_on −5
tn = 2.991 × 10

to := ( 1 − k) ⋅ T − tf − td_off −5
to = 1.99 × 10

( a) ID := IDSS VDS := VDD

PD := ID⋅ VDD
Using Eq. (4-35) PD = 0.01
Pd := ID⋅ VDD⋅ td_on⋅ fs
−6
Using Eq. (4-37)
Pd = 5 × 10
tr⋅ VDD −8
tm := tm = 3.053 × 10
(
2⋅ VDD − RDS⋅ IDS )
Chapter 4-Transistors
Page #4-12
 Using Eq. (4-38)
2
VDD ⋅ IDS
Pp :=
(
4⋅ VDD − RDS⋅ IDS ) Pp = 254.453
Using Eq. (4-39)

⎛ VDD RDS⋅ IDS + VDD ⎞

Pr := fs⋅ IDS⋅ tr⋅ ⎜ + ⎟ Pr = 1.007
⎝ 2 3 ⎠
Pon := Pd + Pr Pon = 1.007

( b) ID := IDS VDS := RDS⋅ IDS

PD := ID⋅ VDS PD = 17.5

Using Eq. (4-41)
Pn := RDS⋅ IDS⋅ IDS⋅ tn⋅ fs Pn = 10.47
( c) ID := IDS VDS := RDS⋅ IDS

Pc := ID⋅ VDS Pc = 17.5

Using Eq. (4-41)
Pn := RDS⋅ IDS⋅ IDS⋅ tn⋅ fs
Using Eq. (4-46)
Pn = 10.47

PD_off := RDS⋅ IDS⋅ IDS⋅ td_off ⋅ fs PD_off = 0.025

Using Eq. (4-45)
VDD⋅ IDS⋅ tf ⋅ fs
Pf := Pf = 0.083
6
Poff := PD_off + Pf −1
Poff = 1.078 × 10

( d) ID := IDSS VDS := VDD

PD := ID⋅ VDS −2
PD = 1 × 10
Using Eq. (4-41)
Po := IDSS⋅ VDD⋅ to⋅ fs −3
Po = 3.981 × 10
Pon = 1.007 Pn = 10.47 Poff = 0.108
Using Eq. (4-48)
( e) PT := Pon + Pn + Poff + Po PT = 11.589

Chapter 4-Transistors
Page #4-13
 Prob 4-14

PT = 11.589
TJ := 150 TA := 32 RJC := 1 RCS := 1

Tjk := TJ + 273 Tjk = 423

TAk := TA + 273 TAk = 305

Using Eq. (4-50)
TJ − TA
RSA := − RJC − RCS
PT RSA = 8.182

Prob 4-15

IT := 150 VCE1 := 1.5 VCE2 := 1.1

−3 −3
( a) Re1 := 10⋅ 10 Re2 := 20⋅ 10

From Eq. (4-66)

VCE2 − VCE1 + IT⋅ Re2
IE1
IE1 := IE1 = 86.667
Re1 + Re2 ⋅ 100 = 57.778
%
IT
IE2
IE2 := IT − IE1 IE2 = 63.333 ⋅ 100 = 42.222%
IT

ΔI := IE2 − IE1 ΔI = −23.333 ΔI

⋅ 100 = −15.556
%
IT
−3 −3
( b) Re1 := 20⋅ 10 Re2 := 20⋅ 10
From Eq. (4-66)
VCE2 − VCE1 + IT⋅ Re2 IE1
IE1 := IE1 = 65
Re1 + Re2 ⋅ 100 = 43.333
%
IT
IE2
IE2 := IT − IE1 IE2 = 85 ⋅ 100 = 56.667%
IT

ΔI := IE2 − IE1 ΔI = 20 ΔI
⋅ 100 = 13.333%
IT

Chapter 4-Transistors
Page #4-14
 T
Prob 4-16

3
IL := 120 VS := 400 fs := 20⋅ 10 −6 −6 5
tr := 1⋅ 10 tf := 3⋅ 10 x :=
100
( a) From Eq. (4-54)
VS⋅ tr −6
Ls := Ls = 3.333 × 10
IL

( b) From Eq. (4-56)

IL⋅ tf
−7
Cs := Cs = 9 × 10
VS

( c) From Eq. (4-57)

Ls
Rs := 2⋅ Rs = 3.849
Cs

( d) From Eq. (4-58)

1
Rs := Rs = 18.519
3⋅ fs⋅ Cs
VS
( e) Rs :=
x⋅ IL Rs = 66.667

(f ) From Eq. (4-59)

1 2
Ps := ⋅ Cs⋅ VS ⋅ fs 3
2 Ps = 1.44 × 10

Prob 4-17
−9
IL := 45 VS := 30 3 −9 tf := 25⋅ 10 5
fs := 50⋅ 10 tr := 60⋅ 10 x :=
100
( a) From Eq. (4-54)

VS⋅ tr −8
Ls := Ls = 4 × 10
IL

Chapter 4-Transistors
Page #4-15
 ( b) From Eq. (4-56)

IL⋅ tf −8
Cs := Cs = 3.75 × 10
VS

( c) From Eq. (4-57)

Ls
Rs := 2⋅ Rs = 2.066
Cs

( d) From Eq. (4-58)

1
Rs := Rs = 177.778
3⋅ fs⋅ Cs
VS
( e) Rs :=
x⋅ IL Rs = 13.333

(f ) From Eq. (4-59)

1 2
Ps := ⋅ Cs⋅ VS ⋅ fs
2 Ps = 0.844
Prob 4-18
−3 −3
VS := 10 IBO := 1.5⋅ 10 IBS := 1⋅ 10 VBE := 0.7
−6
C1 := 0.01⋅ 10
VS − VBE 3
R1 := R1 = 6.2 × 10
IBO

VS − VBE 3
R2 := − R1 R2 = 3.1 × 10
IBS
Using Eq. (4-67)

R1⋅ R2 −5
τ 1 := ⋅ C1 τ 1 = 2.067 × 10
R1 + R2
−5
τ 2 := R2⋅ C1 τ 2 = 3.1 × 10

Chapter 4-Transistors
Page #4-16
 0.2 3
fmax := fmax = 3.871 × 10
τ1 + τ2

Prob 4-19
Vd2 := 0.9
Vc := 400 Rc := 3.5 Vd1 := 3.6

VBE_sat := 0.7 VB := 15 RB := 1.1 β := 12

( a) Using Eq. (4-69)

⎛ VB − Vd1 − VBE_sat ⎞
I1 := ⎜ ⎟ I1 = 9.727
RB
⎝ ⎠
Ic := β ⋅ I1 Ic = 116.727

( b) VCE := VBE_sat + Vd1 − Vd2 VCE = 3.4

Using Eq. (4-72)

Vc − VBE_sat − Vd1 + Vd2

IL := IL = 113.314
( c) Rc
Using Eq. (4-73)

Ic := β ⋅
(
I1 + IL )
β+1 Ic = 113.577

Chapter 4-Transistors
Page #4-17