Name: KIRAN P

Roll No.: B180894EE

S7 EEE
A Batch
EXPERIMENT NO:3
MOSFET Characteristics
AIM
1. To obtain the transfer characteristics of the given MOSFET and
determine the transconductance and threshold voltage.
2. To obtain the output characteristics of the given MOSFET and determine
its on-state resistance.
3. To obtain the switching characteristics of the given MOSFET and
determine the turn on delay time, turn on rise time, turn off delay time
and turn off rise time.
COMPONENTS REQUIRED
Name Specifications Quantity
MOSFET – Si3440DV 150V,1.5A 1
78.75Ω 1
Resistors 5Ω 1
14Ω 1
Inductors 1µH 2
0 – 100V 1
Voltage Source
0 – 15V 1

THEORY
The MOSFET – Metal Oxide Semiconductor Field Effect Transistor – is a
semiconductor device widely used for switching purposes. It is a four-terminal
device having source (S), gate (G), drain (D) and body (B) terminals. In general,
the body and source are connected together hence forming a three-terminal
device similar to the field-effect transistor.
The main principle of the MOSFET device is to be able to control the voltage
and current flow between the source and drain terminals. It works almost like a
switch. The operation of the MOSFET mainly happens in three regions – cut-
off, saturation and linear or ohmic regions.
𝛥𝐼𝐷
Transconductance, gm =
𝛥𝑉𝐺𝑆
𝛥𝑉𝐷𝑆
Output resistance, Ro =
𝛥𝐼𝐷
OBSERVATIONS
1. Transfer characteristics
Circuit diagram

Calculations
Vrated= 150V;
60+𝑆 60+3
Applied voltage = ×Vrated = ×150 = 94.5V
100 100
Irated = 1.5A;
Current is limited to 80% of its rated value, I = 0.8×1.5 = 1.2A
𝑉 94.5
⸫ R1 = = = 78.75Ω
𝐼 1.2

Graphs

Threshold voltage = 3.243V

 𝛥𝐼𝐷 180.146𝑚𝑉
Transconductance = slope of the graph, gm = = = 1.70863S
𝛥𝑉𝐺𝑆 307.803𝑚𝐴

Transfer characteristics for different VDS

Graph
 2. Output characteristics
Circuit diagram

Calculations
Vg = 10+d = 10+4 = 14V
Graph

𝛥𝑉𝐷𝑆 28.58𝑣
Output resistance, Ro = = R1 + Ron = = 79.04𝛺
𝛥𝐼𝐷 361.65𝑚𝐴

Ron = 79.04 – R1 = 79.04 – 78.75 = 0.2904Ω

Output characteristics for different gate voltages
Circuit diagram

Graph
 3. Switching Characteristics – without parasitic inductance
Circuit diagram

Calculations
Rg = 5+c = 5+9 = 14Ω

Graphs
a. Trise = 35.147ns

b. Tfall = 58.97ns

c. Ton = 223.32ns
 d. Toff = 665.134ns

4. Switching characteristics with parasitic inductance

Circuit diagram
Graphs

a. Trise= 33.24ns
b. Tfall = 71.53ns

c. Ton= 239.74ns
 d. Toff = 701.69ns

RESULTS
1. The transfer characteristics of the given MOSFET was plotted. The threshold
voltage was determined from the graph to be 3.243V and the
transconductance was determined to be 1.70863S.
2. The output characteristics of the same MOSFET was plotted. The on-state
resistance was determined to be 0.2904Ω.
3. Switching characteristics was plotted.
Without parasitic With parasitic
Parameter
inductance inductance
Trise 35.147ns 33.24ns
Tfall 58.97ns 71.53ns
Ton 223.32ns 239.74ns
Toff 665.134ns 701.69ns