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(ALCANTARA - BSEE-2D) Experiment 1 Final Report
(ALCANTARA - BSEE-2D) Experiment 1 Final Report
College of Engineering
Ayala Boulevard, Ermita, Manila 1000
Experiment 1
JUNCTION DIODE CHARACTERISTICS
Name:
Lawrence Abram M. Alcantara
Subject:
ACEE5L-M - Electronic Circuits: Devices and Analysis 1, Lab
Date Performed:
October 04, 2022
Date of Submission:
October 18, 2022
Instructor:
Prof. Vilma C. Pagtalunan
Grade:
Remarks:
EXPERIMENT NO.1
I. OBJECTIVE:
To test a junction diode and measure the effects when it is on forward or reverse bias
condition.
II. DISCUSSION:
The standard symbol for a semiconductor diode is an arrow and bar showing the direction of
current. The arrow is the P-side and the bar is the N-side. The arrow and bar are generally
marked on the diode. To determine the state of the diode, simply think of it initially as a resistor,
and find the polarity of the voltage across it and the direction of conventional current through it.
If the voltage across it has forward-bias polarity and the current has a direction has matches the
arrow in the symbol, the diode is conducting.
For the most applications, simply the threshold voltage in the forward-bias region and an open-
circuit for applied voltages can define the characteristics of a diode less than the threshold value.
III. MATERIALS:
V
R
Fig. 1.1 Measuring the effect of forward bias on current flow in diode
1. Construct the circuit shown. Set the supply letting the voltage V to be. Volt. Increase the
voltage from 0.1 Volt steps to maximum of 0.8 Volts. Measure and record the current, if
any, in Table 1.2. Also compute for the forward resistance of the diode.
2. Reverse the diode. Like on forward biased circuit, measure the current and record, if any
with the power supply varying in steps from 0 to 40 Volts. Again for each conditions,
compute for the reverse resistance of the diode.
V. DATA AND RESULTS:
FORWARD REVERSE
VAK I, mA R, Ω VAK I, mA R, Ω
0 0 0 0 0 0
0.1 0.00018916 528652.9922 5 0.000037037 135000135
0.2 0.001496 133689.8396 10 0.0000421 237529691.2
0.3 0.010527 28498.14762 15 0.000046896 319856704.2
0.4 0.072939 5484.034604 20 0.000052225 382958353.3
0.5 0.504121 991.8253753 25 0.000056843 439807891.9
0.6 3.476 172.6121979 30 0.000062172 482532329.7
0.65 9.095 71.46783947 32.5 0.000063949 508217485.8
0.7 23.625 29.62962963 35 0.000066791 524022697.7
0.75 60.253 12.44751299 37.5 0.000068923 544085428.7
0.8 147.374 5.428365926 40 0.000072475 551914453.3
Table 1.2
3. Remove the diode from the circuit. Measure the forward and reverse resistance of this
diode. Record the result in Table 1.3. Compute the resistance ratio, r, of his diode.
RESISTANCE RATIO
2. Under what condition will a junction diode turn on? Refer to your measurement in Table
1.2
The data in Table 1.2 indicate that the junction diode may come on in a forward-
biased circuit because as the Vak travels, the resistance reduces, increasing the current.
The junction diode will not function in the reverse-biased circuit, yet there is still a growing
resistance.
3. Explain how (a) forward-bias, (b) reverse-bias conditions may be established. Referring to
your experiment, explain also how the resulting current is affected.
Forward bias in a standard diode refers to a voltage that permits normal current
flow across the diode. Conversely, reverse bias describes a voltage across the diode that
moves the other way. Therefore, during reverse bias processing, the voltage across the
diode generates little to no significant circulating current.
4. What portion, at the volt-ampere characteristics curve of the forward-bias diode is linear.
5. What is the effect of the DC resistance of the diode over this linear portion?
The influence of a diode's DC resistance on the linear section occurs between the
current flowing through the diode and the voltage across it. Current in a reverse diode is
nearly constant about bias voltage at the limit of breakdown events. However, it shows that
the current is flowing and growing from 0.1Vak to 0.8Vak in voltage.
6. Compare the characteristics of silicon and a germanium diode and determine which is
preferred to use for practical application.
Silicon has a lower outflow current than germanium, with a threshold voltage of
0.3 V against 0.7 V for a silicon diode. In virtual labs, silicon diodes can function at a
lower voltage level of up to 0.8V, whereas silicon is preferred because it can operate at
higher temperatures.
The relevance of a diode's resistance ratio is that it can tell whether the diodes are
practically unidirectional in operation since they have a high reverse-to-forward resistance
ratio.