Power Transistors

2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Unit: mm
Complementary to 2SB1299
10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2

■ Features

4.2±0.2
7.5±0.2
● High foward current transfer ratio hFE
φ3.1±0.1

16.7±0.3
● Satisfactory linearity of foward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2

4.0
■ Absolute Maximum Ratings
1.4±0.1
(TC=25˚C)

14.0±0.5
Solder Dip
0.5 +0.2
–0.1
Parameter Symbol Ratings Unit 0.8±0.1

Collector to 2SD1273 80
VCBO V 2.54±0.25
base voltage 2SD1273A 100
Collector to 2SD1273 60 5.08±0.5
VCEO V 1 2 3
emitter voltage 2SD1273A 80
1:Base
Emitter to base voltage VEBO 6 V 2:Collector
3:Emitter
Peak collector current ICP 6 A
TO–220 Full Pack Package(a)
Collector current IC 3 A
Base current IB 1 A
Collector power TC=25°C 40
PC W
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SD1273 VCB = 80V, IE = 0 100
ICBO µA
current 2SD1273A VCB = 100V, IE = 0 100
Collector cutoff current ICEO VCE = 40V, IB = 0 100 µA
Emitter cutoff current IEBO VCB = 6V, IC = 0 100 µA
Collector to emitter 2SD1273 60
VCEO IC = 25mA, IB = 0 V
voltage 2SD1273A 80
Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A 500 2500
Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A 1 V
Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz 50 MHz

*h Rank classification
FE

Rank Q P O
hFE 500 to 1000 800 to 1500 1200 to 2500

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

1
Power Transistors 2SD1273, 2SD1273A

PC — Ta IC — VCE IC — VBE
50 1.0 5
(1) TC=Ta IB=1.2mA TC=25˚C
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

(1) Al heat sink 1.0mA

40 (3) With a 50 × 50 × 2mm 0.8 4

Collector current IC (A)

Collector current IC (A)

Al heat sink
0.7mA
(4) Without heat sink
(PC=2W) 0.6mA TC=100˚C
30 0.6 3
0.5mA

0.4mA
25˚C
20 0.4 2
0.3mA
–25˚C
(2) 0.2mA
10 0.2 1
(3) 0.1mA
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
100 10000 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=40 VCE=4V VCE=12V

f=10MHz
Forward current transfer ratio hFE

30 3000 TC=100˚C 3000 TC=25˚C

Transition frequency fT (MHz)

10 1000 1000
–25˚C
TC=100˚C 25˚C
3 300 300

25˚C
1 100 100
–25˚C
0.3 30 30

0.1 10 10

0.03 3 3

0.01 1 1
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) — t

100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

30
102 (1)
Collector current IC (A)

10
ICP

3 t=1ms (2)
IC 10

1 10ms
DC
1
0.3

0.1
10–1
2SD1273A
2SD1273

0.03

0.01 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)