Professional Documents
Culture Documents
Submitted by
Gopi Nath Sah
Class XII A
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Acknowledgement
I would like to express my special thanks of
gratitude to my teacher (Mrs. Alka Chopra)
as well as our principal (R K Tyagi) who
gave me the golden opportunity to do this
wonderful project on the topic (Write the
topic name), which also helped me in doing
a lot of Research and i came to know about
so many new things I am really thankful to
them.
Secondly I would also like to thank my
parents and friends who helped me a lot in
finalizing this project within the limited time
frame.
Bonafide certificate
This is to certify that Gopi Nath Sah of class XII A has
successfully completed the investigatory project on
“TO STUDY VARIATION OF CURRENT USING A LDR"
under the guidance of Mrs. Alka Chopra .This project
is absolutely genuine and doesn't not involve in any
kind of plagiarism. This is in partial fulfillment of
Physics practical examination CBSE 2016.
Department of Physics
(Mrs Alka Chopra)
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INDEX
ACKNOWLEDGEMENT
i.
BONAFIDE CERTIFICATE
ii.
1. INTRODUCTION
2
2. AIM & APPARATUS
3
3. PHOTORESISTOR DISCOVERY
4-5
AND MECHANISM
4. PRINCIPLE & THEORY
5-6
5. BRIEF DESCRIPTION OF
6-8
COMPONENTS
6. APPLICATIONS
9
7. PROCEDURE
10
8. OBSERVATIONS
11-14
9. RESULT & CONCLUSIONS
15
10. BIBLOGRAPHY
16
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For solve above these problems, we create a device in which the lights
glow in night and in day time, they off automatically and don't glow.
Due to use of it, we can solve above problems and can also save
electricity and men's power.
(a) In the power of the incandescent lamp, used to ‘illuminate’ the LDR.
(Keeping all the lamps at a fixed distance).
APPARATUS:
Light Dependent Resistor(LDR),Connecting Wires, Source of different
power rating(bulbs), Bulb Holder , Metre scale, Multi Meter Battery.
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Photoresistor mechanism
A photoresistor or photocell is a component that uses a
photoconductor between two contacts. When this is exposed to
light a change in resistance is noted. Photoconductivity - the
mechanism behind the photoresistor - results from the
generation of mobile carriers when photons are absorbed by the
semiconductor material used for the photoconductor. While the
different types of material used for light dependent resistors are
semiconductors, when used as a photo-resistor, they are used
only as a resistive element and there are no PN junctions.
Accordingly the device is purely passive.
There are two types of photoconductor and hence photoresistor:
• Intrinsic photoresistor: This type of photoresistor
uses a photoconductive material that involves excitation of
charge carriers from the valence bands to the conduction
band.
• Extrinsic photoresistor: This type of photoresistor uses a
photoconductive material that involves excitation of charge
carriers between an impurity and the valence band or
conduction band. It requires shallow impurity dopants that
are not ionised in the presence of light.
PRINCIPLE
This project is based on Light Dependent Resistance
(L.D.R.). Light Dependent Resistance [LDR] is a resistance, in
which opposing power of current depends on the presence of
quantity of light present, i.e. the resistance of LDR increases or
decreases, according to quantity of light which falls on it.
USES
Applications
PROCEDURE
1. Choose a specific position for the source and mount it
using a holder, make sure it is stable.
2. Select the bulb with the lowest power rating and
connect it to the holder as shown in the figure.
3. Connect the LDR, battery (6V) and the multimeter in
series.
4. Set the multimeter to ohm section and select suitable
range and measure the resistance with a bulb on.
5. Similarly switch to current section and move to micro
ampere in the multimeter. This gives the value of the
current.
6. Repeat these steps with different power sources at
different distances and note down observations.
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OBSERVATIONS :-
The experiment has been conducted by using various sources with
different power ratings. Voltage of the battery = 6 V.
OBSERVATIONS TABLE :-
(a) Variation in current of LDR with lamps of different power, keeping
distance fixed.
Distance
between Source(Bulb)
S.No. LDR and Of power Resistance(Ω ) Current(mA)
the source imputs(W)
d(cm)
1. 10 15 1310 4.58
2. 10 30 770 7.00
3. 10 60 285 21.00
4. 10 100 195 30.00
1. 20 15 2800 2.14
2. 20 60 650 9.00
3. 20 100 435 13.79
1. 30 15 4300 1.4
2. 30 60 1000 6.00
3. 30 100 660 9.00
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Distance between
S.No. LDR and the Resistance(Ω ) Current(mA)
source d(cm)
1. 4 105 57
2. 6 180 33
3. 8 230 26
4. 10 280 21
5. 12 360 16
6. 14 440 13
7. 16 500 12
8. 18 575 10
9. 20 675 8.8
10. 22 740 8.1
11. 24 820 7.3
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Distance between
S.No. LDR and the Resistance(Ω ) Current(mA)
source d(cm)
1. 4 80 75
2. 6 130 46
3. 8 170 35
4. 10 205 29
5. 12 270 22
6. 14 300 20
7. 16 360 16
8. 18 410 14
9. 20 460 13
10. 22 525 11
11. 24 585 10
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SOURCES OF ERROR
Biblography