Name-Nishi Paoani Department -T

Ro UL No-1300o 21 4040
Sechon-6
Subject -1T 30Sb
CA3

Deuve MoSFET COent equahon. Desvube -v chaatenc Hes

de dsi on
expneasion on he ohan CUken as a

undhon Vat and VD

VDg
The inwnlon ljen change per uni anLa S,

On Coy Vne-V)
hene Vnc gat Ho chonnel vol1ag e dOp

VE Hhveshold vollage
h e t to channe poten Hal a any duslanu y om h

Sonu ond Can be whilen

VGc Vos-V)
whe vlY) - vollaqe daop alo ng he ehannel du to

Qn9) Cox LVnsVly) -V.)

No
dan tunent
channel widh
wnn
el echron u t valoih

Vl)
Vn A n E)
-

No Vn
Conbining eqn O, we ge

d
Subghhng enn in n
x 4 dVy
Coxl Vat -Viy)-V) oly
nkgaling both i dus we 3e

Cox Ves-VG)- V) xwnX dV)

O Vos
To - n Cox W X (Vass-Voy) -) xav)

TXL ACosx[V-V)VorVo
Un Cox W
(Vias-VVouVDx
Fquch on ( i he MOSFET CLten eguahon.

1-V chanackoushos

Vns2-V

0n Eegion
Linca
QauhaH
40 negion

300

V a O Sv

2-0
oS 0

De Cv)>

FoY snmoll Vps,tht

aun hen neanla ueaoe wih
As Vos 1S inaeoed, hu dhain ethh en Sahwnaka
As VDSs
Vos ndapendent on Vn
ond becomes
Expain hou) a tuDinpu NAND ao desgned
(nvele
lek ub consid a Sunple exampl o t w o p u NAND al dei
design
The to0 - inpu NA D unehon i exphessed b
Y- AB
Slep Tak comlemernt o y
AB A B
PDNJ
Slep) Design he
Ty h i cae ue s nly One AN D 9ai U e will be two
MOSFET in 9enues
Naw h PUN and PDN 1 ghoon

VDD

A- -

AH

BAL
Dpenahon When Azo and b=0, bah he n MOS ransistov
a oFF
Ound bolh oMO hans ItoY ane ON.
Han hi Op is onnehed toVpo
3a highe a ju ojp.
when A-1 Ond B0, *ha Uppen nMos e oN
and las en
nMos 1s otkSo olf connot be Connedkd to
quound Undvn h e
tondihon, ht pMoSs o ut
ugh pMos is om. Henu h p
10 conneckea t VDD and we
ga high at H oulput
wkan A o n d B =l tboth nMoS rancicOrw ane OnN and
both pMOS tanqi shuv aae dFF Henu Hhe O is onned +o ound
loL a
Ond e logic
 T

bnhanument
eminad
3 Dadube phun apl ot a h ree
h e wokang

MOSFET.Cn ype
oha 9all Aral
oppued
Dependnq on Hhe volae
1.s dvided thto 2 co1go nies'
HOSFET
the OponoHOn o

OAceumutalon
Deplekion
Inngnsion
Aceumuldion n s s v a negain volkoge fs
püed a
gal Leminal, tha mgri
CoUeU holw)
khom th phype &ubsralu ane okradd
Jesuminal and acumulaled undpn eath h au Oxide
Layen This ts alleol Qcumulalt on
condiHon

Depletion tVas is &mel + T a small + voltage i

oppied, the holes will be nepelled nt the gubghrati

Theop ell ed holey willmon Qwb&at ond

eaimegah dd chonged acteptOr Ord umdRnne oth
ho oyide lay Thele xed megaHns honeed ion

ovm he depleion layen

Tn ension Vns 1c lange

t THthe We
oU val Hage is
holes an
ang
lange enough h e maoühy con R apelled b
he Qub chralt Ond mal numbetrA o minorth
elechOns O otraed owando the galt oxide
atraded elehonA aLurMulalt Und neath
Cuotau.
The
Oxlde and Orm ondu ng path betw een H
ound drain Thes eDnducHg path Called
gOnu u
channel and e OndiHOn I kndwrn sorg
ineuion
Di sus abou he
solung o MoSF ET
The heduchon MOSFET
dumenciOne ic kn0wn as
a s
g calun MOS FET dimension ahe
oht ch
lcdled by a lcolu hatr ()
aPpnOXi maely 1.u P a nerhno
t 1o91
wo main d node
seolun.q eshnique dend a ollous
Constant ield gcalin In his, h a dumencjoo os
OSFET ond Hha lenminal valtage aHe caled wi m Hhe orne
Scalehater hat he al esric eld hemaing COntlant.

COnstoant vo l4age colun9 The dumensi o oHOSFET

ane gealed u ha uminal volloage a s u k p cOnstant
the elechmc ald
caunq n ueas e
This
pe o s caluing 1 e gnad

CannO be caled tO metdh a

ignal equin enmenk by
in the prunled nir bo and whw t
othn ehipe L

uk ed
S4atl Mooxe s u

Moone low Qtades ha he numbe o rontis Bone on

a ehip doubu e n 4 rmonthS Hone ph eds ol, h l a s
an emphivical oto Devaon tha a oenti o
SemicOndu c0Y Ilegaled Cx uul 6ne an mos F eOnormi elly

manatone oubu y 2ees TH4alo h a r we

and opablu y Ou ptuo o

can eyPe he Qpeed

ndeale LOpu o yeshA ond we will poj

o hem