Switching Diode

1SS355 Datasheet

lApplication lDimensions (Unit : mm) 　lLand size figure (Unit : mm)

High speed switching 1.25±0.1 0.1±0.1
　　　 0.05 0.9MIN.

0.8MIN.

2.1
lFeatures

1.7±0.1

2.5±0.2
1) Ultra small mold type.
(UMD2) UMD2

2) High reliability. 　lStructure

0.7±0.2
ROHM : UMD2 0.3±0.05 　　　 0.1
JEDEC : SOT-323
JEITA : SC-90/A dot (year week factory)

lConstruction lTaping specifications (Unit : mm)

Silicon epitaxial planar 4.0±0.1 2.0±0.05
φ1.55±0.05
f1.550.05
0.3±0.1

1.75±0.1
3.5±0.05

8.0±0.2

2.8±0.1
2.75
1.40±0.1 4.0±0.1 f1.05
φ1.05
1.0±0.1

lAbsolute maximum ratings (Ta= 25°C)

Parameter Symbol Limits Unit
Reverse voltage (repetitive peak) VRM 90 V
Reverse voltage (DC) VR 80 V
Forward current IFM 225 mA
Average rectified forward current Io 100 mA
Surge current (t=1s) Isurge 500 mA
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C

lElectrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF - - 1.2 V IF=100mA
Reverse current IR - - 0.1 mA VR=80V
Capacitance between terminals Ct - - 3 pF VR=0.5V, f=1MHz
Reverse recovery time trr - - 4 ns VR=6V, IF=10mA,RL=100W

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© 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.11 - Rev.E
 1SS355 Data Sheet

lElectrical characteristic curves

100 10000

Ta = 125°C
FORWARD CURRENT : IF(mA)

1000

REVERSE CURRENT : IR(nA)

Ta = 125°C
10 100
Ta = 75°C Ta = 75°C

10
Ta = 25°C

1 1 Ta = 25°C

Ta = -25°C
0.1
Ta = -25°C
0.1 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 40 50 60 70 80

FORWARD VOLTAGE : VF(V) REVERSE VOLTAGE : VR(V)

VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS

10 910
f = 1MHz Ta=25°C
FORWARD VOLTAGE : VF(mV)

IF=100mA
CAPACITANCE BETWEEN

900 n=30pcs
TERMINALS : Ct(pF)

AVE : 885.9mV

890
1

880

870

0.1 860
0 10 20 30

REVERSE VOLTAGE : VR(V)

VF DISPERSION MAP
VR-Ct CHARACTERISTICS

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© 2013 ROHM Co., Ltd. All rights reserved. 2/5 2013.11 - Rev.E
 1SS355 Data Sheet

lElectrical characteristic curves

100 1
Ta=25°C Ta=25°C
90 0.99
VR=80V f=1MHz
REVERSE CURRENT : IR(nA)

0.98

CAPACITANCE BETWEEN
80 n=30pcs VR=0V
AVE : 0.961pF
n=10pcs

TERMINALS : Ct(pF)
70 0.97

60 0.96

50 0.95

40 0.94

30 AVE : 15.4nA 0.93

20 0.92

10 0.91

0 0.9

IR DISPERSION MAP Ct DISPERSION MAP

20 3
REVERSE RECOVERY TIME : trr(ns)

Ta=25°C
FORWARD CURRENT : IFSM(A)

IFSM 2.5 VR=6V

AVE : 13.6A 8.3ms
IF=10mA
15
1cyc. RL=100W
2
PEAK SURGE

AVE : 1.3ns
10 1.5

1
5
0.5

0 0

IFSM DISPERSION MAP trr DISPERSION MAP

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© 2013 ROHM Co., Ltd. All rights reserved. 3/5 2013.11 - Rev.E
 1SS355 Data Sheet

lElectrical characteristic curves

20 100

IFSM

FORWARD CURRENT : IFSM(A)

FORWARD CURRENT : IFSM(A)

8.3ms 8.3ms IFSM

time
15
1cyc.
PEAK SURGE

PEAK SURGE
10 10

0 1
1 10 100 1 10 100

NUMBER OF CYCLES TIME : t(ms)

IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS

1000 0.001
REVERSE POWER DISPERSION : PR (W)
THERMAL IMPEDANCE : Rth (°C/W)

Rth(j-a)

100
Rth(j-c) DC
TRANSIENT

0.0005

Mounted on glass epoxy board D = 1/2

10 IM=1mA IF=10A
Sin(θ=180)

time

1ms 300ms
1 0
0.001 0.1 10 1000 0 50 100

TIME : t(s) REVERSE VOLTAGE : VR(V)

Rth-t CHARACTERISTICS VR-PR CHARACTERISTICS

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© 2013 ROHM Co., Ltd. All rights reserved. 4/5 2013.11 - Rev.E
1SS355 Data Sheet

lElectrical characteristic curves

0A Io Io
0A
0V 0V
t VR t VR
0.2 D=t/T 0.20 D=t/T
VR=40V DC VR=40V
DC T T
Tj=150°C Tj=150°C

FORWARD CURRENT : Io(A)

FORWARD CURRENT : Io(A)

AVERAGE RECTIFIED
0.15 0.15
AVERAGE RECTIFIED

D = 1/2 D = 1/2

0.1 0.10

Sin(θ=180) Sin(θ=180)

0.05 0.05

0 0.00
0 25 50 75 100 125 150 0 25 50 75 100 125 150

AMBIENT TEMPERATURE : Ta(°C) CASE TEMPERATURE : Tc(°C)

DERATING CURVE (Io-Ta) DERATING CURVE (Io-Tc)

20
DISCHARGE TEST ESD(kV)

15
ELECTROSTATIC

AVE : 9.4kV
10

5 AVE : 2.4kV

0 C=200pF C=100pF
R=0W R=1.5kW

ESD DISPERSION MAP

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© 2013 ROHM Co., Ltd. All rights reserved. 5/5 2013.11 - Rev.E
 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
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