VLSI and MEMS Technology

Float Zone Method

Float Zone Method
Float Zone Method
Shaping
Fabrication of P-N Junction Diode
Practical P-N Junction Diode Structure

ID

+ ID metal
SiO2 SiO2

P-typeSi
p-type
VD
n-type Si

– metal
 Process Flow Chart Fabrication of P-N Junction

Si n-Silicon

Chemically cleaned silicon wafer

SiO2 Silicon dioxide

Silicon-Oxide Interface

Si n-Silicon

Silicon Wafer with a Grown Silicon dioxide layer on top.

Oxidation Furnace
 Positive
Silicon dioxide Photo Resist Layer

n-Silicon

Spin Coat of Positive Photo Resist

Ultra Violet Rays

Glass plate
Emulsion Mask
Silicon dioxide U.V Exposed Region (Polymerized
Photo Resist)

n-Silicon

Photo Resist Polymerization on U.V Exposure

 Spin Coating Technique

1. Spin Coating System (APEX) is an

indispensable tool for fabricating thin
films on a suitable substrate.

2. Easy to use, safe and inexpensive, this

method is extremely desirable for many
applications where high qualities of
layers are required.

Applications:

▪ Thin film coatings on semiconductors/ metals & glass

▪ Casting of organic films
▪ Micro circuiting etc
Spin Coating System
Photolithography
 Silicon dioxide

n-Silicon
Silicon dioxide

Windows in Photo Resist After Development

Silicon dioxide

n-Silicon
Silicon dioxide

Photo Resist Coating on back of the wafer to protect oxide

 Silicon dioxide

n-Silicon

Silicon Oxide Etching in BHF

Silicon dioxide

n-Silicon

After Photo Resist & Wax removal Removal

 Pre Deposition
Boron Atoms ambient

Silicon dioxide
Impurity Deposition (Boron/Phosphorous)

n-Silicon

Boro-silicate glass with

Silicon dioxide Boron atoms

n-Silicon

Pre-deposited Wafer
 Boron Glass Removal

Boron atoms
Silicon dioxide

Impurity ATOMs present in all

n-Silicon Exposed surface during Pre Dep.

DRIVE - IN

Silicon dioxide
p p Pre-deposited wafer heated at
High Temperature so impurity
n-Silicon Move into silicon.
 Back Oxide Etching for N-contact

Silicon dioxide Front coating photo

p p
resist layer
n-Silicon

Oxide etching in Buffer HF

Silicon dioxide
p p

n-Silicon
Photo-resist Removal and Metallization

Silicon dioxide
p p

n-Silicon

Silicon dioxide Aluminium Thin Film

p p
Deposition
n-Silicon

Photo Resist
Silicon dioxide Aluminium
p p

n-Silicon
 High Vacuum Thermal Coating Technique

1. High Vacuum Thermal/ e-beam Coating

Unit (Model BC-300) is a versatile
coating unit for thin film applications
with facilities for evaporation, glow
discharge cleaning etc.

2. The system offers a variable source to

target distance of 30cm-80cm &
uniform deposition over 3 cm diameter.

3. The temperature of the substrate can

Applications: be varied from 27 0C to 550 0C possible
deposition materials are all
▪ Protective coatings Interference Filters semiconductors/ oxides & metals.
▪ Reflection & Anti-reflection layers
▪ Anti-corrosive layers
▪ Electrically conductive & Transparent coatings
▪ Contact layers
High Vacuum Thermal Coating Cont..

Fig: High Vacuum Thermal/E-Beam Coating Techniques

High Vacuum Thermal Coating Cont..
 U. V Rays
Glass
Photoresist
Silicoon dioxide Aluminium
p p

n-Silicon P- Contact

PHOTOLITHOGRAPHY FOR Metal Contacts

Silicon dioxide
p p

n-Silicon

Development to remove U.V Exposed Photoresist

 Silicon dioxide
p p

n-Silicon

After Aluminium ETCHING

Silicon dioxide
p p

n-Silicon

Photo-Resist Removal in Acetone

p
One Diode Chip after separation
of diode
 High Vacuum Thermal Coating Technique

1. Thermal evaporation is one of the

popular deposition technique in which
electrical energy is used to vaporize the
solid material by heating it to
sufficiently high temperature.

2. The temperature of the substrate can

be varied from 27 0C to 550 0C. The
possible deposition materials are all
semiconductors/ oxides & metals.

Applications:
▪ Protective coatings.
▪ Reflection & Anti-reflection layers.
▪ Anti-corrosive layers.
▪ Electrically conductive & Transparent coatings.
▪ Contact layers.
 High Vacuum Thermal Coating Cont..

Fig: Schematic diagram of High Vacuum Thermal Coating Unit

High Vacuum Thermal Coating Cont..
 RF/ DC Sputtering Technique

Applications:

▪ Protective coatings.
▪ Reflection & Anti-reflection layers.
▪ Anti-corrosive layers .
▪ Electrically conductive & Transparent coatings.
▪ Contact layers.
RF/ DC Sputtering Technique Cont…

Fig: Schematic diagram for RF/DC Sputtering Technique

 High Vacuum Thermal Coating Technique

1. Thermal evaporation is one of the

popular deposition technique in which
electrical energy is used to vaporize the
solid material by heating it to
sufficiently high temperature.

2. The temperature of the substrate can

be varied from 27 0C to 550 0C. The
possible deposition materials are all
semiconductors/ oxides & metals.

Applications:
▪ Protective coatings.
▪ Reflection & Anti-reflection layers.
▪ Anti-corrosive layers.
▪ Electrically conductive & Transparent coatings.
▪ Contact layers.
 High Vacuum Thermal Coating Cont..

Fig: Schematic diagram of High Vacuum Thermal Coating Unit

High Vacuum Thermal Coating Cont..
 RF/ DC Sputtering Technique

Applications:

▪ Protective coatings.
▪ Reflection & Anti-reflection layers.
▪ Anti-corrosive layers .
▪ Electrically conductive & Transparent coatings.
▪ Contact layers.
RF/ DC Sputtering Technique Cont…

Fig: Schematic diagram for RF/DC Sputtering Technique

Silicon on Insulator
Hill lock Formation
 Ohmic and Schottky Contacts

Ohmic Contacts
Schottky Contacts
Packaging
Chip Bonding
Device Characterization Techniques
 X-Ray Diffractometer (XRD)

Applications:

▪ Determination of crystal
structure.
▪ Quantitative texture analysis.
▪ Preferred orientation studies.
 XRD

Fig. XRD spectra of ZnO thin films

 Microstructural Parameters Derived from XRD Results
0.94𝜆
𝐷= D=22nm
𝛽𝑐𝑜𝑠𝜃
𝜆
𝑎=𝑏= a=b=3.013Å (a=3.24982Å)
3𝑠𝑖𝑛𝜃
𝜆 c=5.21Å (c=5.20661Å)
𝑐=
𝑠𝑖𝑛𝜃
1 Defect Density = 2.06x10-3 nm-2
𝐷𝑒𝑓𝑒𝑐𝑡 𝐷𝑒𝑛𝑠𝑖𝑡𝑦 = 2
𝐷
𝛽 Lattice Strain = 5.56x10-3
𝐿𝑎𝑡𝑡𝑖𝑐𝑒 𝑆𝑡𝑟𝑎𝑖𝑛 =
4𝑡𝑎𝑛𝜃
𝑐 − 𝑐𝑜
𝑅𝑒𝑠𝑖𝑑𝑢𝑎𝑙 𝑆𝑡𝑟𝑒𝑠𝑠 = 𝜎 = −233 [𝐺𝑃𝑎] Residual Stress= -0.537 GPa
𝑐𝑜
Absorption Coefficient: Refractive Index:
1 1 2.303 4𝑅 1+𝑅
𝛼 = ln = 𝐴 𝑛= 2
−𝑘 +
𝑑 𝑇 𝑑 (1 − 𝑅)2 1−𝑅
 Multi Mode Scanning Probe Microscopy

1. Multimode Scanning Probe Microscopy

is having all standard operating modes
and many unique capabilities to
characterize everything from
mechanical to electrical properties at
high resolution.

Applications:

• Electrical property mapping (current and capacitance).

• To obtain surface forces and images at nano and micro levels.
• Direct mapping of nanomechanical properties.
 Multi Mode Scanning Probe Microscopy Cont…

Fig: Working of AFM in Contact Mode

Fig: AFM 2D/3D Images

 Field Emission – Scanned Electron Microscope

1. The Scanning Electron Microscope

generally produces largely magnified
images using electrons so that surface
morphology of the deposited films can
be analysed.

2. The FE-SEM is coupled to EDX detector

for measuring the elemental chemical
composition of nanomaterials.

Applications:
▪ Metallic materials.
▪ Ceramics and composites.
▪ Polymeric materials.
▪ Geology and mineralogy.
▪ Dental materials.
Field Emission – Scanned Electron Microscope Cont…
Field Emission – Scanned Electron Microscope Cont…

Fig: SEM Images for Different Applications

 Transmission Electron Microscopy
1. Transmission electron microscope offers
high resolution imaging and analysis for
life sciences, materials science,
nanotechnology and semiconductor
industries.

2. Transmission electron microscopy is used

to obtain detailed images of extremely
small areas with a magnification of about
1000kX using electron beam. TEM can be
used to analyze various features such as
crystal structure, dislocations and grain
boundaries etc.
Applications:

• Life sciences.
• Materials sciences.
• Nanotechnology.
• Semiconductor industries
Transmission Electron Microscopy Cont…

Fig: TEM Images

 Electrical Characterization Techniques

Fig. Setup for I-V/ C-V measurement (a) measuring unit (b) probe station
 Parameters can be derived from Electrical Characterization

Barrier Height Calculations:

𝑘𝑇 𝐴𝐴∗ 𝑇 2
∅𝐵 = ( )
𝑞 𝐼0
Ideality Factor Calculations:
𝑞
𝜂=
𝑘𝑇𝑠𝑙𝑜𝑝𝑒
Series Resistance Calculations:
𝑑𝑉 𝜂𝑘𝑇
= + 𝑅𝑆 𝐼
𝑑 ln 𝐼 𝑞
 UV-VIS NIR Spectrophotometer

▪ UV-VIS NIR is an accurate, simple, non invasive and non destructive method which is frequently used
to obtain thickness, transmittance, absorbance and reflectance of thin films in semiconductor
technology.
 Parameters can be derived from Optical Characterization

Refractive Index: 4𝑅 2+
1+𝑅
𝑛= − 𝑘
(1 − 𝑅)2 1−𝑅

Absorption coefficient: 1 1 2.303

𝛼 = ln = 𝐴
𝑑 𝑇 𝑑

Real Part of Dielectric Constant: 𝜖𝑟𝑒𝑎𝑙 = 𝑛2 − 𝑘 2

Imaginary Part of Dielectric Constant: 𝜖𝑖𝑚𝑔. = 𝑛𝑘

Micromachining Techniques
MEMS Applications
MEMS Pressure Sensor
MEMS Pressure Sensor
MEMS Based Gas Sensors
 MEMS Based Micro Heater

• MEMS Micro-heaters are micro-meter sized hotplates. They are composed of thin suspended membranes that have a
resistive heater coil sandwiched between electrically insulating, but thermally conducting layers.

• This technology enables high speed heating and cooling in a few milliseconds, along with accurate in-situ temperature
measurement. These micro-heaters also provide excellent stability at high temperatures.

• MEMS micro-heaters have gradually gained its wide applications in combustible/ hazardous gas sensors, infrared
detectors, infrared sources, thermal flow sensors, actuators, micro-thruster prototypes, polymerase chain reaction
(PCR) etc.

• The micro-heater technology presents a series of advantages such as miniaturized size, low power consumption, fast
response, high sensitivity and feasibility of sensor array integration.
MEMS Based Micro Heater
Fabrication Flow
Fabrication Flow
Gas Sensing Mechanism
Piezoresistive and Capacitive Accelerometer