Neteo S.

unit-y
MOSFET

E- SoS FET
p- Mos FET

h-chan P-chonna
h-chahna p-channal

Daplan -ty þa or p-ty e mosfET:mosFET

Constueton the daLation tye Senj Couety
Fia (i). Ap-t ho
yrmatorial (silicon ) usad substeto .sualy
dhu Su bststhe intnaly connactad do dhe
SourcO tus minal . Bt Som ime
Saþooudo harminl tarmed a

n-tyþa
the by a n-chonnal. h Aade terminal ie
nsulated fom d n-chonhal oy a in Siicoh
dioxide layay (Sio)
Dsain (D)
(S) (G)
Sios
n+ n

p-subst
Matel
Cobtot
Fiz) channal
Substoude
’. Dus to the Prasence t th Sios lay4r
ha ch¡hnl,
tan gute tuminal ond h-ty js ary bigh.
he
input imadanca ot MosFET
Dua do high input imsancs De-o ha rating Cond ions
CuYrent To, =o fos the
9osFET'

Case: when Vas o

Pue to the pasitie volHggo aþbliad to
the drain tarminal, tas ,.ton toom dhe chahnel
ottoctd to the drain and the drin Curant
slato qlousing
,Jhio Cusrent is labullod og Lbss
Vas =o v
Vas Vps
H:
Ptho subsdte.

Casl2: when Fa ()
Vas <o (dor hguts vas )
Due to hagae VelHaga
and cathode tusminalg aþ}liad brtaen Aate
Loi)) hend do
 dhe
8ubsteute and attet dhe holog toom the
"heas aacton and las holail)
inside dhe channal dhi oill stucs
the humbuy d toaa acton9 auailabla toy
Conduetion.
) thvaors dhe duin cusYant
with nggutio Value Vas
dhue ao - Vas
for Constant vulue d Vos
. Toanstur and dyain charatariotio
h-channa MOS FET.

Io (m A )

Ipss

linay
Ghmic

(5) tntun gim Vo

frg)", 0) Taut stuy (

Pin
 Endncamant MasFET (E- MoFET)
(. n- chann EuSFET: basic Constri
4 an n-chennol MoFET
is &hoan n tiue0). Aslab c4 ptyo &smi.
Conduty is used ar substouto . dhe substte is
Somtimus Connactad do the Souro othar oio it
is ught out ag tha foundth tasmind.
. e dain ad Sourw tuominal arl Conn
-dehed to he n-tyo dopad
-etad agiong through
te mtallic Contacts.
Gat
(D)
Sio
ht b+

p-substty

cha
ohst
Matahe Contts Fig 0) (body ) 3ubsdate)
ojdh two
dihtont ohoding Condid ion.
 opavation wish Vas
ojpsvadion when Vas is posidiva.
Vaso V
dhe absancs c

Je chanhal.
ttryough
) when pasidne.
Fis o),whan both Vas and Vos
podnsial
ra pasine hu holao prssnt
Sato tasminale su botate and attet lsetn
in dte p-ty e
. thio XRuH in Craation d dapation
Yesion the sios ibsubtng laysr . Gt
ho minevity Casyias@ ie: the alactong in
pty o Substte wi) bo atxoetad toordo
the Aote teym inal and ahey
geher nl dhe durtoee

Vas

htee-e-ee
Ves

Figo)
. As the pasite Vas , the
humbor alachong godhing
lonyer wil) Consaneti
8i0 layar hcrsasuG do such an
uxtunt that it creuteG ah indueed hchasn
buhich Connactg dhe h-ty ho do pad gìon.
dum cusrant dhun stats flow ing
thyougt this induad chahnal . 4 vulu
at Vos t uhich dhip Condution bging is
Collad ag he theashal voltyg )

jndicoted by V6

F 6) the pasitue gahe to Soura

Vas je
incraasad gradua)ly ,de do dhir
Hge tusminal be come less and lass posjdip
the fade
widh xahet do dra So lass hum bor e
attrehed tourde orhe tarminal and Jhe
Sbdueed chann hom

ht\BPET
p-suhdy
Fst)
Vss
>. Euentuolly the chonnd width oil) be
adud do a point ott pirch- aft and tte
Sartusation Condition Loi)) bo estoL)isedhiil
a jFET , 0r D-þo osFE

8 choactoistics h-Chenns E-MosFET:

5. Jh dras chaactuisdico
chosactutg ct hchannal E-MosFET a Shousn
in Fia)(a) and (b) xasheetiuly. gh daai
for Voas<VT
dh trantr charoeturice shon in Fiy (-)a
io Wary much dittoxant from dhose obdainab
how totally in posive Vas
gion and
and x ma in g i)) Vas VT.

obrmic

-Vass+3V
Ves
Jheh aon hrtuasen dain Qunut ahd
Jan by
Ip = k( VasVT)
whne

Pn= mo bility + h-tyho Si

Coy
w= widthl chu bnal
Longth channa.
Fhrad ould ydltgu.

Cut-at yn.
Cases! it Vos 2Vt
and
Sutuatin

Cod3! it Vos Vs
and Vos << VGs -Vs
oh mic on
 Syro bols ot n and p-iyho -mas FE T
both and p-ty þo
D-oFET S aY Shoon balo

h-ty be
Fiyt): lonventnal cirujt sy mbolo
D

hchannal
h-tye p-tye
p-chenna)
FbG): 8im blifisd Ciscuit symbole
-os FET.
. DuA to thu
insulated trom the substate . jhi isolatud guto
() tollooing tuo im poydent
 Synbols E- Mos FETS'

h-channa tasFET p-channal MosFEJ

Compogision t jFET and MoSFET: -

MasFET
jFET
JFET au a to ty u 9osFETg (ah ba of
p-chonnsl cnd hc hahn) dopltion +y he oY E-ty ho
JFETS.
JFETO do not haue dhe MosF¾TG haw dhe
insulatd ibsulated godo sttoe.
Input impedanco is D Highay than JETS.
loar than dhat ot the
Dajh estonco loser Druin witanc high
Qiashg mathod usd p-9os FET 60 Sgm
sol4 bia@ , trad of ÖFETe, but biasind
Cirusto tor E-Mos FET
and veltug dividy are
bia@ and
bia. fuad back bias ing
and vo4ao dividor biasi
 Commenty uasd
A

X Riasing 4 JFET
biusing
Sig jFET ore
Cirtujto tor JFET
(i) Fxed biag ciscut
(0u) Jolt biep ciscuit
( ) Voltyga dividor bia circuit
() F bjes crCut
simjplaat biasiry
}FET
biao Contuaetion as thon in
Siheo

Ve =o w

S-C. Fit)

Vo
Ahoruts
Fig (2) (n bo

fir)
 Voo
fo
for anay yc. +
Vos
S
Gs
kVL do dhe Gate
Circi .
Fiy )
dse shocklry'o
stu3: Qalculade asa kVL to d

Cale ulatîn d Va sa
From F 3)
- Voa- Vos o

Va se

Siho
Vas

Lbo =
Toss Vasa
V
Ioe = Toss (Vas)
Stu3! Epra ssjon t Ves e
olp Lon (s)
Vob - pRp- Vos =o

Vos
Vop -

). Hunco the Co-odinatuo a- point

Clscyt re giuoh by :
6.( Vosu Epa )
For the tsd biaG CisCt tind
the aluo ot Vasa Lpa and Vos Assumt
Loa and

Solutn!

Vos
 Voo- Lp R

Vosa =

&al4 biae Coguation

JFET
Cery iguoton
Sheen thio Cotiguaton
hoed ot tuo de pour
Suþþliss. Vpp

AÞplyn kvL
Vin
Vos

Vas=-Ts fs Foti)
Z|Vaso= - Los

Lpss Vep

Dbß2
Zoo= Ers) )+ Ve
L
 kvL ct outht Fu a)

Lb = Ls

Vos = Vep - Lp (Rp+P)

Von - Lna ( Po tks )
 Vattaga divider ba is ing for JFET
ah vathge diidor biasing for a jFET
ampiiur is "shaon in thuneboleus. In Dc
dhis eircuit oill a ssum tha

qn assu med do bo opan Cirut" for the

DC- araysis . Vop
8nca Kp
w
Ryn=
C
bucaa Lo=oA
Veh= V= RaVpp

Stabl!- obtain the Rs

uopra ssjon for MaVG
Va as -
Ckj.
Vas = G- Lpfs

Lp
Ip= Loss - Vas
Saþ3'- obBain uapassion fox Vos
KVL to the do)h C'rceut
Von - LpRo - VDs-Ls Rs =

Vos = Vpp- Lp Ro- Ds s

Veo- Lp (PtPp)

FET Shaush ib trs bilo

þla he FET
Exom bla:
hos the tellooing paramathars:
S6 m A
yVo t .
Find
So)ution!
Stebl Qaleulote Ip $4:ku
wg shocklay'
stapo; lalalty
Vo
Vas Cortaþondg V;
in sdajo Ip

Ansi Lp = 39m,Vs = 9V
Vo= -)9V
jFET Smal) sinal
si)nal madal
3+ is ali4 only foy low togluene tes for
which it is passiLlo to dhe
Copoeitana8 fox FET Hence the
hamo los
tsaquency modal.

Vos
S

Fig(0: Sma)) Sig nal low faguhey moda)

ot 3FET.
AVes

Vps Coht.

focr 'p' is datihad .

Vos
Fx ) S