MOSFEL

N'

type sub

An infe 9tated dhuut or

semi Conclutsr chp
Fabricated by VLSI wih planna technolog
VCD -

veltage Contolled 'devi ce

symmetrica device.
F o r N- channe, suhsta afe
for P- channel, substacute is
is
Py
P- type
N-tpe
Channe! some timu called inversion layeT
a g e tnt 1f impedance is clye to SiD
InIn deplhon MSFET, there is a pre-exuting Channe
awa Lable

1 n depleion MOS FET defusse channel avlable.

In he gate nejon barallel plate Capautor s

Ceded
MOSFET IS very
very senstive fo static ele dica nbice
an d stafic Po electli c distyr brhcy
 MDSFETI widely uted in ligital cin wifts

MOSMOS FET aUne ess nolS han JFET

Smal in Si2e

Depleion Mode-Max dnun ent Ipss

Sale satnation
D Cwent

Ip L oss.

Enhancement moee
Lp Not sahwahy
saevunt

JF is a minimuM cuTrenf therefome

itcan be scutunaton wnent

TEET aways openated in Depleion degien.

N-Channe deplehon MsET Some-hmu caulle
Dual MOSFET be cauLe be to opeate in
deplefron mode and alio in enhan cement mode

P- channe deplafton MOSFET 1s mbre siulable tor

enhancemen mode.

N-hanne MOSFET IS Fe teo

P- channe MosrET is e a i t ts fubmcoe

 N-MosFET suers om Ion Contamination
p oblem. Dwurg fabrjcohon.
,

I n PmOS on Contamination is legs

PMOS s bulky and cheaper

N-MOS
To get equ performance between
PMOX PMOS Tequire twice the aa reqwre foy
he NMOS

Maun d advantage o NMOS 1s higher pakuge

densi
MOSFET
MOS Verhcally moUed

MOS Complementany mosfE

J f is combination o P-MOJ N-M&

conneced together

J f impedance 7s o5
CM6S will nof, conSume an Powey

The gnecuhst adyantoge t CMOSi 2er0

Power diesiption
 Mor applicatwn o CMOs inverter Not gat)
IN
IN CMOS 1nverfer halever
be he 1P Signa
cupplied, hen one Thansisdr 1 DNN other il be

op1ctron ok N-channel deplfion MOSFET unde

deption Mdde
he pMnuple s the deplefion MOde is the
applied gate fo sourte veuag e mus reduce
he maybnty cautse
chan nel
of he chan nel
n N-Channe crun is tvely. biued with
YeSpect fo source and toOperate under
depttisn mode Gate is-pnsttfjued changed
L f to seurte
VoP
ww

,Lp

P t y p e sub.
piftaH
Chan
 In
Io D-MOSfET under deplehion MODE
Channe pofenfial mnauu faom s Gurcet
dAan
veys/on chaye faom SDurcet dAai
be

When VGs is Kept zcnO

Inversion chauge is 2eTO , Cund therefere
max. no. o -ve chages wi be mtving trom
Souce td nain and dnan Cuvunt
max. and den of ed 1e
by Lpss
lnan to source Sade cdent (sahmahon wvnt

When Vas s applied:

Cyate is given oifh -ve vet theye Fre tve Chage
we accumulafed in the Sc chanhel and due
tsecombination and less no e chonges
sitl be Teaching to dAim Ip
ID decresu.

Lis fur her decreajei aGate is moie - ve.

IM
IfGate is iven oith SufficienF-ve ekange
voUuge wge no o +Ve Chwges e

accumlaled in he SC channe and Yeslts

I tota TecombinatiDN of charge (e/ holes
Hencemo. ve chwge 'Wil| be reaching tthe
dnaàn. Ip decreajes fo 2eso Anc chunne u
in Cut of
 Thans fev chanacteutd Dnain chwradovttics
V,s
Ipss VGs2

Ns - Vas ( t t )
Vp
Conlant cument chutacdeuh3
JFET| MosPET)

In deplehon mode Vpe is Max. pinch o

eguaien for diay cuvunt

Ipss VGs

heve
Vg CAnd Vp Mut hae ome
-Chanel- Depletion mosfET undeY Enhancement
mode

The pun caple o Enhancement mde L

the
cupplied
pplied Gate T SoUrce velrage Muut
+he myori increcle
Cabys fthe hanne.

ln N-channel MOS FET dain is +ve biaued

LWAt to sOyTce and to
bpeate uneder enhancemenf
mode then
hen gATE is tvely biued W t Soure
VpD

T Tt+t

Nt Nt
Dittkdchann
Inverstom (Y

P sub

whenVos s kepf 2CYD

nveysion change is 2ero

Minimum ve chwqe wi be moving to
daam and dham CwD E s minimum

When Vcs s oppltect (*ve),ve chage get

accumuoteo hs uoi Uinoicale e cape in
chann Ip
Dansfer Chouhacteutig Pao chanacteii

(m) Vcst4

Vps- Cond{

1p Ves

Vos pe

In enhance ment MOde Vp s minimum.

pIps1-Vs
VGs R VP muwf haUe Same sign
under Pinch oft candi fin
min
Vps Vgs tVp.

Charadeai(t N- channel depleion MosP

enhancemen Msde
deptim
dulettn Mod

V
T hana
 Dale 12 11-22

Lh hanement Mos FET (01) E MosFET (or

ENHAN CE MENI MOSFET

Sownce and dain a kept apant

channel could n't k be fomed in between
ddnain qund SOwce

lo pe- existihg chanDe

In enhancement type MosFET, aluminum
plates o metallic Plates CUe neplaceel
sith poly Caystalline. Bilicon mateua

Due fo cohich we will get follo wng aduan ge

Si2eget ne duce
2. Cut MOSFET is Teduced
3 fab. po cesS be comes easieT
4 Givesbetter pestomance fhan cD-MSET
symmeti ca duice

VcD
In E-ony MOSPET Channe is o be Created
Gate to Source vetage
applyir7
 oly Cryrall

S
D

Nt Spacef Nt tox tAickney

channe

Ptype.substvedte
Body
-channe{ Enhancemenf MDST

When popex gate fo sdW1e vettage is applied

and if body MOSFET s als's Duadd
is alo eletcd betseen
9eunded
gate and body , of
Vs MOS FET and clue to
this eledhic d 1ntensity ceated and
channe is indu ced 1n bëto ee0 sounce and
dha Tegion

J t Is Flat channe
A A panalle! plate capai tor is outed at he

gate negion with poly Cysi ne silhen gafe

as the too plate
plate and induced chenned
Ccpacitr and Si0 Cy he dieletic mauMa
 t
CoY

Cox
toy Fm
Gete o t
unit aA
Cop Per

x - 3 45Y lo F|m

Gte (Cox) () x CL)

L lensth of poly tnystaline Gate

W width

aspect natio.
L
 When
when smallu yalue of is. aplied the channe!
Vps
n e m a i n veny 4lat and smal! dnain cuwbont
loo into derce a iven below

smuwaus
NT

LInduced
tye sub N-channel

hcn g ex ycdues o Vos is applied, theA chann

et iapeed Habpexee shon in fy

larqer
DS
value

inuced
'nverism ch.

Tapung o the channel sdue to Vos

Vps
When 1anger value of Vos
Vos s applid PN
be kgkly Re and cute fo lager dapletn aidtth
be brek ith
laer wit get fm and inatywiu break
ey kayh Vps
iansfer chwiadoustics ofEnharcement MDS FET
off stal
ON-State

VT VGs

VT -

th reshotd votafe

1F,<Vr,'MosT s oFf Stale O C

Zf Vs VT AMOST js ON state e sc.

Dn oin chanacferistics ofN-channel-E-MasFET(E-©n

Th'tece Satwatsy Resiu

Reon

VpsSy Vps
()
Vps Saf) VGsT.
 TRIDDE REG/ON
Also, Ccalle d ohmn9Cgon, lineu1 hegubn, active TLOID
nd men s sofoabOn °7

VpsSaf)
Vps VGs-VT
VT
Scuturatien Reg/ovn
Alse caUed pinch off qion
Pentode veqro)

Vps
Vps T Vps (saf4)
Vps Vps -VT
Symbo[s OF N-Channe? MoSFET
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Sub
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Nofe' Above sysbol ooe wed for Deplet1on

Enhanernenf

E
Fol/ouoing Sysmbots ane we for E-on MoST
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