Expt. No. Page No.

R-Dated i a-

EXPERiMENT-5
Obiective Aphlication
2ene cluedo a voltaae
Hequlator Neas uwiement heucentoge aeaulaPlon
b Vltas vau im load resistor
Ap haxatus Requited

s.N ame o Abpavatus

2enH uode
Speciication Ouamtt
GV breakdo wn
2 DC Pow e Supplu 8 V vaiable
3. Resistamce Powe 0.SV
e bon
Potentomeleu OK
Diata NuttmeBeu 3 3/4 digt
Bread boau d
Connetmg uire

Bme Theo A PN im" diodo bloes notcomduct

heneNexie biased Rui i4reveae volfageA
imcreasedata_baticulasuvolfage t_stat komduc
hing heavilyThis voltage e a e d breakolown
NoHage Hiah Cuuvent rough ho diods can
beumamentty_damage it But ho zenediod in
eee bias majmtaina almost conatant diode
voltae-
voltage acDSS ita euminals whateve may be
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 CircutDiagaam

GV

Obsva-tion Table
R Gin NL
0.17 8.14 4.CG .323
0.31S .417
3 0102 4.G .S1
0.So9 8.14 .CG 3.00
6.GO9 3.14 .GG 3.54
O 10G .14 4.6G 3.13
0.301
8.94 4.GG 3.1
O.927 8.14 4.6C 1.2S
.014 .GG -31
t.508 .GC .S9
.o1S 8.94 .6G 4.C3
2 .Sqy 8.14 4.Ge .64
3 3.0Go M.CG y.64
4 . 0u.0 8.14 .6G .C4
Is S.yS 8.14
.66 4.6
Ic84 8.1
4.GG
n.8 3.14 4. GG .C9
1s0 . S 8.1 4.GG
8.y .66
 Expt. No.- Page No.3-Dated-

behoinhut voltage amd aue nt hough i So

a 2enu oiode is a P N jumcn specialy mada to
ookim brea k dowm egion.

Peucentage laad Resistamce_

voltage regulation of am device 1a usually
expesed a p&centegeeatícm
Thopewcentage reaulation 1 iven byN
Fomula
(tL-Ve)fVEL)xlOb
Expec-ted oad seiztance e
haactebBicà
vt
VmECOnt_

Bat Rostatanet RL
Precautiomy
Thotumimaly o ho zenau diods should be
propely identiied
whule dteu mimedtho Load teALAtan
equladion
Load hould mot be immediatty Shoted._
Should be enawed haths abplied voltasey
auenta olo noi exceedtho yatimg o the
diode
Suchetu

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 Expt. No. -
Page No. Dated-

ExPERIMENT-6

obicctive f1ELD EFFECT TRANSISTOR-sinale dage

epmmon SOwuce_ftT amplir-plot e qum in dh
Vs uency measwwement o band width mpuT
impedance maximum signal landling cabacit
TMSHC an amplitie

Aphaxatu Requird'
SAEaupment Combonent name Secifiiation uandik
FET Amplifiu Tham
Resulated Pouwe Subbly (0-30v, IA
function aEnLaton C- LONHz),20V
Cathad Roy Oscilloscope (o-20 Hz)
Mutimetu 3 digit disla
Connecting u1Us.

Theory A t JfET Can be N-Channe tyhe P

Cha nnetybe Tk& tuctwu a Pchannel JfE TiA4
Simi la Tothat CanN-Chan hrl EET.Except fhatf
ni stuctuu N-tyhe is eplaced byP tyhe amd
Pypeby N-type T stuctwu a m N-channe
NFET > abauotNype siliuon. Tus bax behav_
k e a ruistor between two teumimal called
50wHCe md draum. We ntmduce he av _dohed Pt
egiom 0n eth SId o bau hUe P-glor ay
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 P
Gate

Souu ee

JET th p-tbe i a t ia

Cu end lo

N-
4pe JFET ith
depletion Kegion
Expt. No. Page No. Dated

catledadtd USually o9afes auconnecHed

gethu
Hosethu TuA t e is uedto comtmo Cuuent
m Suuce to 2Ata dra'nT low o
elec makes hu cham c ent Td.Ths electm
th baupaxe thmug h hu Spaces between t
wo -Tgions. A idtth hi Spacebefuueen
| p a o ns cam e comtolled by ya
Aate voltase thatiA CaI ed_achanne
e app lu a small Teveuse bio to hagate. Because
T a Tevese_bias
te
a uidth o deblettom increosek
Isincetha N-type ba iaJightly doped composed to t
ea iam deble-tions egion extendy mgre into f
N-peba Thus neduced t wiotth o thechonne
Redu ctiOm 1m 4ke width tu chan nel mceaAe ia
i$fance s rduce tu draun Cuent Ld. Thaus is
Ona mportatomt about tha channel shabe.t i>
naoweu a f t s drun end.ua hapbens because h
amount evesuse biau ià not Same hmoughout tu
ngth thoP-Njumction.When cuuent lo thrmuah
th bau,a otential dhop Ocau a ross it dungth As a
r t th veveube bias befueen tu_gate and tho dacum_
end h ba i morethan 4had t betuueen_
the ba u wiolth
Gate camd tu &o ce end e
efdele-Hon yeion13 moie o at tho dre end
|-ham at th 8ouuce th Soue en d thobau. Tu

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 Obsvation Table

S.No Vim mV) H) gaum d8

20J0, yel
42 8
20 S4.8 1s
3 3oD G. 4 .D8
SOD 63.3 1.99
3.G o.04
3.6
I0.0
3 3.G 0.04
3.6
10.04
63.6
10.0y
Lo 63.6
O.04
30 63G 10.04
So
2
y. 0.0
3 62.8 10.1S
616 9-93
S 30o G1.2 1S
Soo 54.8 719
Too 4s.8 7.1S
18 D.8 611
34 9.19
D
Expt. No. Page No.- -Dated-

T oidth epletiom eq 1om more han at thu

S o C e end
SowCe A8 a eAut t chamne become
nnuw o we at the elain end emd dhrau'n Uennt
Etu educe ho eveuse b r i maoo
Su entylaug etho depledion-regiom uill extend.
into cha nnel. TNs ba aimchs oH all uend ou
Tu aa - SouHCe Voltage at whichpmch- O OCC
'm called PINCH- OF
voltag e Vp
Calculadfe the vo ltaye_gaim t hamblifiu at
D

leach egu ency by omula

Au _ o Vo
OTOVm
EXPECTED PRE GUENC Y RESPONSE
we hove plotted a gaph beween gaim amd.
Thus
requeny o obtaim a reg uency repon cusUe Th
valu Lamd H m gmbh Cuu Iven aas
9iven as.

tH

Bw fH- fL_

RESDT ANA LYSIS

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20
 Expt. No. -
Page No.- - Dated-

EXPERIMIENT-1
ObiectiveChouActuadNez BJTBJT CE
ComsuLatio -Coaphical Reowement h
Ipauanmeteus m impu omdouthut chouacteufstica|
Meeu) uuement Av A, Ro omd Ri o4 CE
ampli iHh_polential euvid biam
Required. -
Components
,NeEquu þment Conbonent Specidi cation/ Ouant-ty
na m e
valuu

amupror BCiUT ImaxICO mA

Po 306mW
Vceo YSV, Vo O
Reaulated Depouieu
Supbly O12N
O.
3 fumtiom_enuator (oMh2.
Digitu ultimete 3 li'aA diaplay - 2

S Cathodu Ra 0sCillbscope O MH2

6 Res is toos Pouoeu raH 0.Sw
Ca bon ype
Ca pac t o r

ConnecHn UITe

Theom
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 COMMON EMITTER CONFIGURATION
INPUT HRARACTERISTIC

BCIOTBP

www
39 K
(O-OD)mn
PeS
(0-20v) (o-15V

OUTPUT CHARACTE RISTICS

(0-2oDu A)
3CtU18P
wW
3K

RPS
(0-1S
O-1s)
 Expt.No. Page No. Dated

INPUT CHARACTERISTIC3
Th
Tu uo Stt_ ochaua cteuiaics a neceM ouyto
l s c m b e th
behaviowe CE Confiawwatiom one Hor
input C hase
emiHey ut cmd oth or +h
loutput ( collector emitte cincut .Jn impu
chauaeqISHCS th_emite4 base unchom o o aMd
biabeo
biadeol D aveuysmal voltHae uheue
vBB
collector base
junctOm eveuse bised by a ve
agevoltage VcC T mpu chauacteibtics auu a
euuvent
þlot C nput 18 vesus fhs imput volHage vBE
FoY aage ovalus ooutput veltage VCE
ollou
TTu ollouoim imotant þoimts can
be obseuved n m
hese chan actei3Hs
cuwve
1T
1 T u chana cte i4-hes reemble
that o E ontiquuuation
a In pu yis fanue hah a 18 imcreas ly' apidly
with VBE
3. T mbut Yistane et th ra nd itor
1 h ratto
change im base emitit yoltaL9 AVBE to cnange im_
ba Cu ent A JB at cond tant co llector em Heu Vo ltou
O
CVCE) -enpud 713tance inbut imbe dance hie
AVBE A)B ad VCE constamt

OUTPUT CHARACTERISTICS
A set aouthuut chwacteaiaticz collec for chayaCfeyistic8
u a a a plet outhut cuenf IC Vs outþut volfusevCE
oY a anae o_nput_ uHent
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20
 Expt. No. Page No.- Dated-

FTT ollouoi mbortad poimt Can be obsuvad om

AechauacHIStic cUs-
ya ndisto a s bheuart in th aive
H CollectoYCL ent IC imcreaa i t h vcE.T
analSte sCud to be wo kinA im SatwuatOn eign
Dutput stance h ya+io change collecfo_
emHe voltae 4cE to c hanaeb in
collectov Cund
Tolth con)tamt Tsoutp ut 7sdance Output
impd nce hoe AVCE/Te at
Te onstant
Inpud imbedante hie AV ee /A Te at Te Coatant
2 Outpud
Oufpui medance hoe 4Vce61e at ohatam+
ReveuseepVoltage Gaim hre= ANBt4VcE at TIe
cOtant
4.Foaand Cuwuent GunhHe : 2AI/AT aconstamt
VCE
In C8 coniHatiom le i» +veT 13eamd d3 -veh
,

Se, VeB : 1 Ve6, Ie) ond I+2 lVeB, le) with an

ncTeadimg ths evse
collectoy voltaSethu Space-
Chaug e uidth at h outp.ut unchon imCre and
Hw ekhective base uoi dlth dec7eos Tus bhenomenon
Kno wn Ely e ect" Then , hwu us ill be lus
chance Sor geco mblnctlom uothin dh base vegion,
uo ith imcres e cha 9radd end uoith im 4ha bae
aiO, th
iected
aLroS S thu emteu unction mCYeOLS .Tw cwuent
omlifiation actOY oC8.comtigwtation ià qiven |
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 Expt. No.
Page No. Dated

To edanse hib = AVat/ AJE a Vcg coutand

2 Outh d impedance hob _ I /AVcE at IE ontan
Reve e olfse Aain byb: 'AVBe AVce a
Forwau d
Congtant
4Foroad CuHen Cain hib: 41 le at conytanf

Obs euv ation Table

Tnpud
Applied
ChauacteuistCs_
VCE 1 v VcE S V
voltage l@VBt (V) Te (uA) a t (V)_ TpuA)
0.S8
2 0.63
81
21.6 O.6G 7.8
3 0.636 1.6 o.61
0.64 12.3 0.614 To.
O-S4y 93.6 0.616 12
.648 4
0.674 13
0.6S1 13S.3 0.G1 3C
O.6Sy 1 S7
O-is3 SC
O.GST .684
lo 0.658 O. 686

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20
Expt.No. Page No. Dated-

utpuChauacieistica -
hoApblied T: O JA A20uA
ve
voHoge(
tageCvv)
NCE =(V) Lm)Ve (v) I. m)
OS 8.8 mV_ 17
2
0.37 3 3mV 4
3 .725 2.2S
353
.
.1R 1SmV 3-31
S
3.16
37mv .67
3.02 O.8/V S.24
3.67 $3 S.S
.3
3.13 S.15
S. 3.18 3.V S
G8S 3 23
4-loy
T.84 3 8
5.04

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Expt. No
Page No. Dated

EXPERIMENT-3
boiecHiveSimuu ution
tambliiu unuuts 3tudued m.
Jw ab mgam ayailable simulat lom SaHuue and
N
meauemtnt bamdwidtth ond ath_pauamttt
measuHEment

wth hulp Simulatiom SeqHuaau

ReguTement Equment Componenh Deskfop Comput

th mimimum ICB RAM, ub to 3GH2 mcemor 3
speed
Seed amd
imdou X NT platfom
Sotuw aHe
TINA- TI
exaImi ment
CiuA DMagra mySmulatiom Reult
Nay Outpud voltage-_10. 71101 V
Cutot Louhas=3d84 13:11028M
Cu Hiahpo=3a6 J4 34 10OS2 K_
Bamdusidth- Bond þom_ 3d8 N:4-:13.S761SM
Anaaia
Selec4img dsired siana equendyom fh
Tuenu yOe Ve obsuye tha mbut ond
0upu IGnalwave tomu and comments
Puform 0naUsi t etimate nodlal volteg
Ond ent vauw
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ORCUtT DIAGRAM

12 2ok
ww

SoomV
RE
Vdt
3.6K

arcwt sche matie CE aml1