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Ankesh Jain
Assistant Professor
G
S D B
+ + +
n n p
p
2
MOSCAP
§ MOS capacitor
G Ci
S D B
n +
n +
p+
p
VFB 0 VT VGS
3
MOS I-V Characteristic
§ MOS transistor : It’s a four-terminal device
VDS
VGS
G
S D B
+ + +
n n p
p
4
MOS I-V Characteristic
§ MOS transistor : It’s a four-terminal device
NMOS PMOS 5
MOS I-V Characteristic
§ MOS transistor : It’s a four-terminal device
VDS
§ 𝐼𝐺𝑆 = 0
VGS § 𝑉𝐺𝑆 < 𝑉𝑇 : Cutoff region
§ 𝑉𝐺𝑆 ≥ 𝑉𝑇 :
G
S D B § 𝑉𝐷𝑆 ≥ 𝑉𝐷𝑆𝐴𝑇 : Saturation
+ + + § 𝑉𝐷𝑆 < 𝑉𝐷𝑆𝐴𝑇 : linear
n n p
p
6
MOS I-V Characteristic
§ MOS transistor : It’s a four-terminal device
7
MOS I-V Characteristic
§ Boundary of linear and saturation region
! & &
§ 𝜇 𝐶
" # $% '
(𝑉() − 𝑉* )" = 𝜇# 𝐶$% ' ((𝑉() −𝑉* )𝑉+) − 0.5(𝑉+) )")
§ 𝑉() − 𝑉* = 𝑉+)
§ 𝑉( − 𝑉* ≤ 𝑉+ . => Saturation
8
Small signal transconductance
! &
§ 𝐼𝐷 = " 𝜇# 𝐶$% '
(𝑉() − 𝑉* )"
𝑊
= 2𝜇# 𝐶$% 𝐼𝐷
𝐿
9
MOS I-V Characteristic
§ Effect of channel length modulation
+,.
§ g0 = = 𝜆𝐼𝐷
+-.)
!
§ r0 =
2,.
10
Small signal equivalent
§ It’s a DC small signal model
§ It has a VCCS and output resistance
§ 𝑔𝑚 is known as small signal transconductance
§ 𝑟0 is known as small signal output impedance
§ In saturation region g𝑚 >> 𝑟0
D
G
gmvGS r0
11
S
Biasing
VB1 VB2 § 𝑉𝐺𝑆 =?
§ 𝑉𝐷𝑆 =?
R1 R3 § 𝐼𝐷 = ?
ID
§ I𝐺𝑆 = 0
3$
R2 § 𝑉𝐺𝑆 = 𝑉
3% 43$ 5!
§ 𝑉𝐷𝑆 = 𝑉5" − 𝐼. 𝑅6
12
Load line
VB1 VB2
ID
R1 R3 VB2/R3
ID VGS4
ID1 VGS3
R2
VGS2
VGS1
VB2 VDS
R2
14
Biasing with current
VDD VB2
I R3
???
ID
M1 M2
I R3
ID
M1 M2
R1 R3 CCC1
vo
CCC
ID
vin R2
R3 CCC1 RL
CCC vo
ID
vin R1||R2
".
§ 𝜔𝑠𝑖𝑔, 𝑚𝑖𝑛 ≫ /
!! (1"||1#)
".
§ 𝜔𝑠𝑖𝑔, 𝑚𝑖𝑛 ≫ /!!"(1$41')
18
Common source Amplifier
VDD
R1 R3 CCC1 RL
vo
RS CCC
ID
vin
R2
R1 R3 CCC1 RL
vo
RS CCC
ID
vin
R2
R3||RL
vo
RS
ID
vin
R2||R1
R3||RL
vo
RS
G D
vin gmvgs ro
R2||R1 vgs
S
vo = −gmvgs ro ∥ R3 ∥ RL
R2 ∥ 𝑅1
vo = −gmvin
𝑅𝑠 + (R2 ∥ 𝑅1) ro ∥ R3 ∥ RL
vo R2 ∥ 𝑅1
= −gm
vin 𝑅𝑠 + (R2 ∥ 𝑅1) ro ∥ R3 ∥ RL 23
Common source Amplifier
VDD
R1 R3 CCC1 RL
vo
RS CCC
ID
vin
R2
R1 R3 CCC1 RL
VD vo
RS CCC VG ID
vin
R2
R1 R3 CCC1 RL
VD vo
RS CCC VG ID
vin
R2