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    This document describes procedures for characterizing a semiconductor diode by measuring its forward and reverse bias characteristics. In the forward bias test, the voltage is increased in small steps while recording the corresponding current to generate an I-V curve. In the reverse bias test, the voltage is similarly increased while measuring the small reverse current. The results show the diode conducts well under forward bias but offers high resistance under reverse bias.

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    This document describes procedures for characterizing a semiconductor diode by measuring its forward and reverse bias characteristics. In the forward bias test, the voltage is increased in small steps while recording the corresponding current to generate an I-V curve. In the reverse bias test, the voltage is similarly increased while measuring the small reverse current. The results show the diode conducts well under forward bias but offers high resistance under reverse bias.

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    © All Rights Reserved
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    8 views1 page

    Adobe Scan 13 Dec 2023

    Uploaded by

    vaibhavagrawal1804
    This document describes procedures for characterizing a semiconductor diode by measuring its forward and reverse bias characteristics. In the forward bias test, the voltage is increased in small steps while recording the corresponding current to generate an I-V curve. In the reverse bias test, the voltage is similarly increased while measuring the small reverse current. The results show the diode conducts well under forward bias but offers high resistance under reverse bias.

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    © All Rights Reserved
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    of 1

    P.

    N JUNCTION
    ttav: the charaler1stic curves ol a sem1 conductor Diode by lorward and reverse Bias1ry

    PROCEDURE

    FORWARD BIAS CHARACTERISTIC


    The crcut conneclions to draw the sein-conductor diode
    characteristic lor lorward tias at
    Fig 1 The switch just below the voltmeler is kept towards )V sde and other sitch tbelo .tete
    towards 1OmA side
    b) Ne the voltage VF Is increased in small steps by using P1 and
    noled correspondig curter: IF, im
    A graph is drawn by taking VF on X-axis and IF on Yaxis
    REVERSE BIAS CHARACTERISTIC
    CirCul conneciions are same bul the Diode is reversed as shOwn in
    90 volls sIde and switch below Ammeler is kepl Fig.2.Switch belb volt neer is kç.at
    b Now the vollage VR iS increased in sleps by
    towards Micro Amps side.
    using Polenlio meler P2 and Micro-ammeter reacing la is
    c) Agraph is drawn by laking VA lowards
    X-axis and IR towards Y-ax's
    RESULT:
    ihe Diode offers good conducting path when
    forward biased. The diode offers poor conducting path wher

    irPUT
    FFOLA2:
    POWER
    SUPPLy

    FIGURE -1 FORWARD BIAS Reverse 2s


    (Volts F o r , 3.: as

    INPUT

    PCWER

    FIGURE 2 REVERSE BIAS

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