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Date Sec
Name Bandr Almalki ID Number 4310141
Lab Report # 1
Marks Marks
Items CLOs
Assigned Attained
1 4.01 15
2
3
4
Total: 15
Instructor/s: Dr.HAYAT LIAQAT Signature:
PERFORMANCE OBJECTIVE
In this lab , I will be able to switch on and off the bipolar and the Darlington
transistors using the 0 to + 10 V power source.
EQUIPMENT
1. F.A.C.E.T. Base Unit
2. POWER TRANSISTORS AND GTO THYRISTOR Circuit Board.
3. Power Supply (15 Vdc @ 1 A)
4. Multimeter
5. Dual trace oscilloscope.
PROCEDURE
1.Connect the POWER INPUT to the power supply ( don’t turn on the power supply )
5. when the transistor is off it will acts like open switch we can prove that by
measure
VCE = 15.13v
VR4 = 0v
6. Turn on the positive power supply control will increase the base current while
observing the oscilloscope between the collector and the emitter ( increase the
voltage to maximum )
• Now the transistor is ON ( it is in saturation region so it will act like close switch )
• A low voltage across the transistor it it’s the on-state voltage VCE(ON)
8. put the positive supply control at 1V what is the base current IB measured by
Ammeter ?
IB = 2mA
10. put the positive supply control to obtain a voltage VCE of 7V now the
transistor operates in its linear region
1. Turn off the power supply ( don’t turn off the base unit )
3. On the base unit, turn the positive supply control fully CW in order to obtain 0
volt at the driver output.
5. Because IB=0 the transistor will works in cut off region ( will be off) so it will act
as open switch. And we can prove that by measure.
VCE = 15.14v VR4 = 0v
6. turn on the source control CW to increase the base current observing VCE on
the scope ( increase the voltage to the maximum ).
9. put the positive supply control at 1V what is the base current IB measured by
Ammeter ?
IB = 0.4mA
10. which of the BJT or the Darlington transistor have high gain comparing with
the other one ? the Darlington transistor have high gain higher than the BJT.
REVIEW QUESTIONS