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Q
---------------------------------------------------------
-
Where ne = electron concentration 8. The neutral region formed on either sides of
T
nh = hole concentration the p-n junction due to diffusion of electrons
--------------------------------------------------------- and holes is called depletion layer.
E
---------------------------------------------------------
3. A doped semiconductor is called extrinsic
semiconductor. In this, ne ¹ nh
---------------------------------------------------------
4. Si or Ge doped with pentavalent impurity is
9.
L LSEMI CONDUCTOR DEVICES
The device which converts AC into DC is
called rectifier. The process in which AC
called n-type semiconductor. In this,ne> nh.
U converted to DC is called rectification.
--------------------------------------------------------
B
---------------------------------------------------------
10. The device which converts only half of the
5. Si or Ge doped with trivalent impurity is
AC wave into DC is called half wave
called p-type semiconductor. In this,ne< nh.
Y
rectifier. Only single diode is used in it.
B
A
BULLET MASTER'S
PHYSI BEATS!
DIODE
B
15) SEMICONDUCTORS [1 VSAQ+ 1 SAQ]
Semi conductor materials are used TED
TE GRA IT
to make electronic devices like IN IRCU
C
R
ISTO (i) diodes(p-n junction diode, photo diode, LED, Zener diode)
ANS
TR (ii) Transistor (p-n-p & n-p-n) (iii) Halfwave, full wave rectifiers
(iv) Integrated circuits and chips.
You Know why Bangalore is called Silicon Valley of INDIA ?
IPE View
F IMP VSAQ: Intrinsic & extrinsic semi conductors, p-type & n-type semiconductors,
Circuit symbols of p-n-p & n-p-n transistors, Universal gates
F IMP SAQ: Differences between halfwave and full wave rectifier, Working of full wave rectifier
« SR. PHYSICS 2
BABY BULLET-Q «
11. The device which converts full AC wave into LOGIC GATES
DC is called full wave rectifier. Two diodes
are used in it. 22. NOT gate: NOT gate-Truth Table
-------------------------------------------------------- Input Output
0.406R L Symbol
12. Half wave rectifier, Efficiency h= A Y
rf R L
--------------------------------------------------------- A Y A 0 1
0.812R L 1 0
13. Full wave rectifier, Efficiency h=
rf R L
--------------------------------------------------------- --------------------------------------------------------
14. A properly doped diode with sharp break 23. OR gate : OR gate-Truth Table
Q
1 0 1
-
--------------------------------------------------------- 1 1 1
15. The diode which detects light is called
T
--------------------------------------------------------
photodiode. It works on the principle of 24. NOR gate : NOR gate-Truth Table
photovoltaic effect.
Symbol of photodiode is
Symbol
L E A
Input
YB
Output
L
0 0 1
--------------------------------------------------------- A
Y A B 0 1 0
U
16. The diode which produces light is called light B 1 0 0
emitting diode (LED).
B
1 1 0
Symbol of LED is --------------------------------------------------------
LED is connected in forward bias. 25. AND gate : AND gate-Truth Table
Y
---------------------------------------------------------
Symbol Input Output
B
17. A semiconductor device having two p-n A B Y
A
junctions is called transistor. A 0 0 0
B Y=A.B 0 1 0
trans(fer) + (res)istor = transistor
B
---------------------------------------------------------
18. Symbol of p-n-p transistor:
1
1
0
1
0
1
--------------------------------------------------------
Emitter Collector
26. NAND gate:
1 0 1
1 1 0
Base
---------------------------------------------------------
Vo
20. Amplification factor for voltage is A V
Vi
--------------------------------------------------------
R
21. Relation between AV and b is AV= E L
Ri