TEMPFET® BTS 100

Smart Highside Power Switch

Features
● P channel
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab

Pin 1 2 3
G D S

Type VDS ID RDS(on) Package Ordering Code

BTS 100 – 50 V –8A 0.3 Ω TO-220AB C67078-A5007-A2

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage VDS – 50 V
Drain-gate voltage, RGS = 20 kΩ VDGR – 50
Gate-source voltage VGS ± 20
Continuous drain current, TC = 30 °C ID – 8.0 A
ISO drain current ID-ISO – 1.5
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C ID puls – 32
Short circuit current, Tj = – 55 ... + 150 °C ISC – 25
Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 500 W
Power dissipation Ptot 40
Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance K/W
Chip-case Rth JC ≤ 3.1
Chip-ambient Rth JA ≤ 75

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Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = – 0.25 mA – 50 – –
Gate threshold voltage VGS(th)
VGS = VDS, ID = – 1 mA – 2.5 – 3.0 – 3.5
Zero gate voltage drain current I DSS µA
VGS = 0 V, VDS = – 50 V
Tj = 25 °C – –1 – 10
Tj = 150 °C – – 100 – 300
Gate-source leakage current I GSS
VGS = – 20 V, VDS = 0
Tj = 25 °C – – 10 – 100 nA
Tj = 150 °C – –2 –4 µA
Drain-source on-state resistance RDS(on) Ω
VGS = – 10 V, ID = – 5 A – 0.25 0.3

Dynamic Characteristics
Forward transconductance gfs S
VDS ≥ 2 × ID × RDS(on)max, ID = – 5 A 1.5 2.3 4.0
Input capacitance Ciss pF
VGS = 0, VDS = – 25 V, f = 1 MHz – 900 1200
Output capacitance Coss
VGS = 0, VDS = – 25 V, f = 1 MHz – 350 550
Reverse transfer capacitance Crss
VGS = 0, VDS = – 25 V, f = 1 MHz – 130 230
Turn-on time ton, (ton = td(on) + tr) td(on) – 20 30 ns
VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, tr – 60 95
RGS = 50 Ω
Turn-off time toff, (toff = td(off) + tf) td(off) – 70 90
VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, tf – 55 75
RGS = 50 Ω

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Electrical Characteristics (cont’d)

at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Continuous source current IS – – – 8.0 A
Pulsed source current I SM – – – 32
Diode forward on-voltage VSD V
I F = – 16 A, VGS = 0 – – 1.0 – 1.7
Reverse recovery time t rr ns
I F = I S, diF/dt = – 100 A/µs, VR = – 30 V – 90 –
Reverse recovery charge Q rr µC
I F = I S, diF/dt = – 100 A/µs, VR = – 30 V – 0.23 –

Temperature Sensor
Forward voltage VTS(on) V
I TS(on) = – 10 mA, Tj = – 55 ... + 150 °C – – 1.4 – 1.5
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – – 10
Forward current ITS(on) mA
Tj = – 55 ... + 150 °C – – – 10
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – – 600
Holding current, VTS(off) = – 5 V, Tj = 25 °C IH – 0.05 – 0.1 – 0.5
Tj = 150 °C – 0.05 – 0.2 – 0.3
Switching temperature TTS(on) °C
VTS = – 5 V 150 – –
Turn-off time toff µs
VTS = – 5 V, ITS(on) = – 2 mA 0.5 – 2.5

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Examples for short-circuit protection

at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Example Unit
1 2 –

Drain-source voltage VDS – 15 – 30 – V

Gate-source voltage VGS – 10 – 8.2 –
Short-circuit current ISC ≤ – 25 ≤ – 16 – A
Short-circuit dissipation PSC 375 480 – W
Response time tSC(off) ms
Tj = 25 °C, before short circuit 55 55 –

Short-circuit protection ISC = f (VDS) Max. gate voltage VGS(SC) = f (VDS)

Parameter: VGS Parameter: Tj = – 55 ... + 150 °C
Diagram to determine ISC for Tj = – 55 ... + 150 ˚C

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Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance

RDS(on) = f (ID)
Parameter: VGS

Typical output characteristics ID = f (VDS) Safe operating area ID = f (VDS)

Parameter: tp = 80 µs Parameter: D = 0.01, TC = 25 °C

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Drain-source on-state resistance Gate threshold voltage VGS(th) = f (Tj)

RDS(on) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA
Parameter: ID = – 5 A, VGS = – 10 V

Typ. transfer characteristic Typ. transconductance gfs = f (ID)

ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V
Parameter: tp = 80 µs, VDS = – 25 V

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Continuous drain current ID = f (TC) Forward characteristics of reverse diode

Parameter: VGS ≥ – 10 V IF = f (VSD)
Parameter: Tj, tp = 80 µs

Typ. gate-source leakage current Typ. capacitances C = f (VDS)

IGSS = f (TC) Parameter: VGS = 0, f = 1 MHz
Parameter: VGS = – 20 V, VDS = 0

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Transient thermal impedance ZthJC = f (tp)

Parameter: D = tp/T

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TO 220 AB Ordering Code TO 220 AB Ordering Code

Standard C67078-A5007-A2 SMD Version E3045 C67078-A5007-A7
SMD T&R E3045A C67078-A5007-A12

9.9
9.5 4.4
3.7 1.3
2.8

15.6
17.5
12.8

1)
9.2
1

4.6

3)
13.5
2)

0.75 0.5
1.05 2.4
2.54 2.54 GPT05155

1) punch direction, burr max. 0.04

2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05

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Edition 04.96
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2000.
All Rights Reserved.

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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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circuits, descriptions and charts stated herein.
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