The document describes the process of designing a CMOS inverter. It involves 8 steps: 1) selecting a foundry, 2) n+ diffusion, 3) polysilicon, 4) n+ diffusion and metal contact to complete the nMOS design. Then 5) creating an N well, 6) p+ diffusion, 7) polysilicon, and 8) contacts to complete the pMOS design. Finally, connecting the pMOS and nMOS sources and drains to form the inverter, adding a signal to the gate, and simulating it to observe voltage transfer characteristics.
The document describes the process of designing a CMOS inverter. It involves 8 steps: 1) selecting a foundry, 2) n+ diffusion, 3) polysilicon, 4) n+ diffusion and metal contact to complete the nMOS design. Then 5) creating an N well, 6) p+ diffusion, 7) polysilicon, and 8) contacts to complete the pMOS design. Finally, connecting the pMOS and nMOS sources and drains to form the inverter, adding a signal to the gate, and simulating it to observe voltage transfer characteristics.
The document describes the process of designing a CMOS inverter. It involves 8 steps: 1) selecting a foundry, 2) n+ diffusion, 3) polysilicon, 4) n+ diffusion and metal contact to complete the nMOS design. Then 5) creating an N well, 6) p+ diffusion, 7) polysilicon, and 8) contacts to complete the pMOS design. Finally, connecting the pMOS and nMOS sources and drains to form the inverter, adding a signal to the gate, and simulating it to observe voltage transfer characteristics.