DIODES

1. Introduction
2. Diode Operation
3. Voltage-Current (V-I)
Characteristics of a Diode
4. Diode Models OUTLINE
5. Half-Wave Rectifiers
6. Full-Wave Rectifiers
7. Power Supply Filters and
Regulators
8. Diode Limiters and Clampers
9. Voltage Multipliers
10. The Diode Datasheet
1. Use a diode in common applications
2. Analyze the voltage-current (V-I)
characteristic of a diode
3. Explain how the three diode models differ
4. Explain and analyze the operation of half-
wave rectifiers
5. Explain and analyze the operation of full- OBJECTIVES
wave rectifiers
6. Explain and analyze power supply filters
and regulators
7. Explain and analyze the operation of diode
limiters and clampers
8. Explain and analyze the operation of diode
voltage multipliers
9. Interpret and use diode datasheets
 • PN JUNCTION
– Basis of many semiconductor devices
• DIODE
INTRODUCTION – Essential to the operation to many
types of circuits
– Ability to conduct current in one
direction while blocking current in
the other direction
– AC rectifier, diode limiters, diode
clampers, and diode voltage
multipliers
 • two-terminal semiconductor device
formed by two doped regions of
silicon separated by a pn junction

THE DIODE

• ANODE (A)
– p region

DIODE OPERATION • CATHODE (K)

– n region
 THROUGH-HOLE SURFACE-MOUNT
MOUNTED DIODES DIODE PACKAGE
TYPICAL DIODE
PACKAGES
 • method of establishing
predetermined voltages or
currents at various points of an
BIAS electronic circuit for the
purpose of establishing proper
operating conditions in
electronic components
– Forward Bias
– Reverse Bias
DIODE OPERATION
 • condition that allows current
through the pn junction

FORWARD
BIAS

• VBIAS
DIODE OPERATION – External dc bias voltage applied across
the diode to produce forward bias
 Requirements for Forward Bias
– Negative side of bias is
FORWARD connected to n-region
BIAS and positive is on the p-
region
– VBIAS must be greater
than the barrier
DIODE OPERATION
potential
 FORWARD
BIAS
Flow of majority carrier

Electron Flow
– Flow of free electrons which are
the majority carriers in the n
DIODE OPERATION region towards the pn junction
 FORWARD
BIAS
Flow of majority carrier

Hole Flow
– The effective movement of holes
which are the majority carriers
DIODE OPERATION in the p region right towards the
pn junction.
 EFFECT OF
FORWARD BIAS
ON THE
DEPLETION
REGION

DIODE OPERATION Forward bias reduces the positive and negative ions
causing the depletion region to narrow
 • To cross the depletion region,
EFFECT OF THE free electrons must be
BARRIER provided with enough energy
POTENTIAL to overcome the barrier
DURING potential
FORWARD BIAS • This energy is equal to the
barrier potential, which
electrons give up.

DIODE OPERATION
 • The energy loss by the
EFFECT OF THE electrons is equal to the
BARRIER voltage drop across the pn
POTENTIAL junction (Si = 0.7V, Ge = 0.3V)
DURING Dynamic Resistance
FORWARD BIAS • additional small voltage drop
across the p and n regions due
to the internal resistance of
the doped semiconductor
DIODE OPERATION
material (very small).
 • condition that essentially prevents
current through the diode

REVERSE BIAS

• VBIAS
DIODE OPERATION – External dc bias voltage applied across
the diode
 Requirement for Reverse Bias
– Positive side of the VBIAS
is connected to the n
REVERSE BIAS region and the negative
side is connected to the
p region

DIODE OPERATION
REVERSE BIAS
Short transition time in reverse bias

VBIAS
• Creates additional ions that
widens the depletion region
DIODE OPERATION
REVERSE BIAS
Extremely small reverse current in reverse-biased diode

Reverse Current
– Extremely small current that exists in
reverse bias after the transition
current dies out caused by the
minority carriers produced by
DIODE OPERATION thermally generated electron-hole
pair
 BREAKDOWN VOLTAGE
– Reverse bias voltage that causes
the reverse current to drastically
REVERSE increase
BREAKDOWN AVALANCHE EFFECT
– Multiplication of conduction
electrons due to the knocking of
the valence electrons caused by
the high speed minority carriers
– Cause current to increase
DIODE OPERATION dramatically (permanent damage)
TITLE
CHECKPOINT
1. Describe forward bias of a diode.
2. Explain how to forward-bias a diode.
3. Describe reverse bias of a diode.
4. Explain how to reverse-bias a diode.
5. Compare the depletion regions in forward bias and reverse
bias.
6. Which bias condition produces majority carrier current?
7. How is reverse current in a diode produced?
8. When does reverse breakdown occur in a diode?
9. Define avalanche effect as applied to diodes.
 • Forward bias produces current
though a diode
VOLTAGE-CURRENT • Reverse bias prevents current,
CHARACTERISTICS except for a negligible reverse
OF A DIODE current, and as long as the
reverse bias voltage does not
equal or exceed the
breakdown voltage of the
junction
 • Forward Current (IF)
– Diode current when forward-bias
V-I voltage is applied
CHARACTERISTIC
FOR FORWARD
BIAS

VOLTAGE-CURRENT
CHARACTERISTICS OF A
DIODE
 • V-I Curve
– Relationship of voltage and
V-I current in a forward-biased diode
CHARACTERISTIC
FOR FORWARD
BIAS

VOLTAGE-CURRENT
CHARACTERISTICS OF A
DIODE
 •  Dynamic (ac) Resistance
– Not linear resistance
V-I
CHARACTERISTIC
FOR FORWARD
BIAS

VOLTAGE-CURRENT
CHARACTERISTICS OF A
DIODE
 • Reverse Current (IR)
– Extremely small diode current
V-I when reverse-bias voltage is
CHARACTERISTIC applied
FOR REVERSE BIAS • VBIAS=0, no IR
• Very small when VR is gradually
increased
• Increases rapidly when VR
reaches Breakdown Voltage
VOLTAGE-CURRENT
CHARACTERISTICS OF A (VBR)
DIODE
 • V-I Curve
– Relationship of voltage and
V-I current in a reverse-biased diode
CHARACTERISTIC
FOR REVERSE BIAS IR below VBR is
in uA or nA

VBR typical
value is greater
VOLTAGE-CURRENT than 50V,
CHARACTERISTICS OF A some has only
DIODE 5V
 COMPLETE
V-I
CHARACTERISTIC
CURVE

VOLTAGE-CURRENT
CHARACTERISTICS OF A
DIODE
 • Temperature Effect on V-I Curve

Increase in
TEMPERATURE Temperature
Increases IF
EFFECTS

Increase in
Temperature
VOLTAGE-CURRENT Increases IR
CHARACTERISTICS OF A
DIODE
TITLE
CHECKPOINT
1. Discuss the significance of the knee of the characteristic curve in
forward bias.
2. On what part of the curve is a forward-biased diode normally
operated?
3. Which is greater, the breakdown voltage or the barrier potential?
4. On what part of the curve is a reverse-biased diode normally
operated?
5. What happens to the barrier potential when the temperature
increases?
 • Diode symbols and how can it
be used in circuit analysis

DIODE MODELS
 • FORWARD and REVERSE BIAS

BIAS CONNECTION

DIODE MODELS
 • THE IDEAL DIODE MODEL
– Least accurate approximation
– Simple switch representation
DIODE
APPROXIMATION

FORWARD BIAS
DIODE MODELS
– Acts like closed (on) switch
 • THE IDEAL DIODE MODEL
– Least accurate approximation
– Simple switch representation
DIODE
APPROXIMATION

REVERSE BIAS
DIODE MODELS
– Acts like open (off) switch
 • IDEAL V-I CHARACTERISTIC CURVE

DIODE 𝑉
  𝐹 =0 𝑉
APPROXIMATION
  𝑉 𝐵𝐼𝐴𝑆
𝐼 𝐹=
𝑅 𝐿𝐼𝑀𝐼𝑇

 𝐼 𝑅 =0 𝐴

DIODE MODELS 𝑉
  𝑅 =𝑉 𝐵𝐼𝐴𝑆
 • THE PRACTICAL DIODE MODEL
– Includes barrier potential
– Switch and small voltage source
DIODE VF when forward biased (positive
APPROXIMATION side towards the anode)

DIODE MODELS –
 • PRACTICAL V-I CHARACTERISTIC
CURVE

DIODE 𝑉
  𝐹 =0.7 𝑉
APPROXIMATION
  𝑉 𝐵𝐼𝐴𝑆 − 𝑉 𝐹
𝐼 𝐹=
𝑅 𝐿𝐼𝑀𝐼𝑇

 𝐼 𝑅 =0 𝐴

DIODE MODELS 𝑉
  𝑅 =𝑉 𝐵𝐼𝐴𝑆
 • THE COMPLETE DIODE MODEL
– Most accurate, includes barrier
potential, small forward dynamic
DIODE resistance (r’d) and large reverse
APPROXIMATION internal resistance (r’R).

DIODE MODELS
–
 • COMPLETE V-I CHARACTERISTIC
CURVE

DIODE
APPROXIMATION 𝑉 ′
  𝐹 =0.7 𝑉 + 𝐼𝐹 𝑟 𝑑

  𝑉 𝐵𝐼𝐴𝑆 − 0.7 𝑉
𝐼 𝐹= ′
𝑅 𝐿𝐼𝑀𝐼𝑇 +𝑟 𝑑

DIODE MODELS
 Determine the forward voltage and forward
current for the diode below for each of the diode
models. Also find the voltage across the limiting
resistor in each case. Assume r’d=10Ω at the
DIODE MODELS

determined value of forward current.

Example
 Determine the reverse voltage and reverse current
for the diode below for each of the diode models.
Also find the voltage across the limiting resistor in
each case. Assume IR = 1 μA.
DIODE MODELS
Example
END OF CLASS NEXT
MEETING

LECTURE
• DIODES
• Half-Wave Rectifiers
• Full-Wave Rectifiers
• Power Supply Filters and Regulators
• Diode Limiters and Clampers
• Voltage Multipliers
• The Diode Datasheet