Professional Documents
Culture Documents
Low gain =
High gain =
0.7 V
𝑽 𝒊𝒏 𝑰 𝑩 𝑹 𝑩 +𝑽 𝑩𝑬 + 𝑹 𝑬 𝑰 𝑬 mA
𝑹 𝒊𝒏 =
𝑰 𝒊𝒏 𝑰𝑩 A
Relatively high
𝑽 𝒐𝒖𝒕
𝑹 𝒐𝒖𝒕 = 𝑹𝑬 Relatively low
𝑰 𝒐𝒖𝒕
Bipolar Junction Transistor
Common Collector (CC)
𝒁 𝒊𝒏 =
𝑽 𝒊𝒏 Bipolar Junction Transistor
𝑰 𝒊𝒏
Common Collector (CC)
𝑽 𝒐𝒖𝒕 ( 𝑹 𝑳=∞)
𝒁 𝒐𝒖𝒕 =
𝑰 𝒐𝒖𝒕 ( 𝑹 𝑳 =𝟎)
𝒈=
𝒊𝒐𝒖𝒕
𝒊 𝒊𝒏
=( 𝜷 +𝟏)
( 𝑹𝑩
𝑹 𝑩 +𝒓 𝒃𝒆 +( 𝜷 +𝟏) 𝑹′𝑳 )( 𝑹𝑬
𝑹 𝑬+ 𝑹𝑳 )
𝒗 𝒊𝒏 𝑹 𝑩 [ 𝒓 𝒃𝒆+( 𝜷 +𝟏) 𝑹′𝑳 ] 𝒗 𝒐𝒖𝒕
𝒁 𝒊𝒏 = = v 𝒁 𝒐𝒖𝒕 = =𝑹
𝒊𝒊𝒏 𝑹 𝑩 + 𝒓 𝒃𝒆 +( 𝜷 +𝟏) 𝑹 ′𝑳 𝒊𝒐𝒖𝒕 𝑬
From previous lecture
Bipolar Junction Transistor
Bipolar Transistor Configurations
High gain
= Low gain
𝑽 𝒊𝒏 𝑰 𝑹 + 𝑽 𝑬𝑩 𝑽 0.7 V
𝑹 𝒊𝒏= 𝑬 𝑬 =𝑹 𝑬 + 𝑬𝑩
𝑰 𝒊𝒏 𝑰𝑬 𝑰𝑬 mA
𝒁 𝒊𝒏 =
𝑽 𝒊𝒏 Bipolar Junction Transistor
𝑰 𝒊𝒏
Common Base (CB)
𝑽 𝒐𝒖𝒕 ( 𝑹 𝑳=∞)
𝒁 𝒐𝒖𝒕 =
𝑰 𝒐𝒖𝒕 ( 𝑹 𝑳 =𝟎)
′
𝒗 𝒐𝒖𝒕 𝑹𝑳
𝒂= =𝜷
𝒗 𝒊𝒏 𝒓 𝒃𝒆
𝒊 𝒐𝒖𝒕 =
𝒗 𝒐𝒖𝒕
𝑹𝑳
𝒈=
𝒊𝒐𝒖𝒕
𝒊 𝒊𝒏
=𝜷
( 𝑹𝑬
𝒓 𝒃𝒆 +( 𝜷 +𝟏) 𝑹 𝑬 )( 𝑹𝑪
𝑹𝑪 + 𝑹 𝑳 )
𝒗 𝒊𝒏 𝒓 𝒃𝒆 𝑹 𝑬 𝒗 𝒐𝒖𝒕
𝒁 𝒊𝒏= = 𝒁 𝒐𝒖𝒕 = =𝑹 𝑪
𝒊𝒊𝒏 𝒓 𝒃𝒆+( 𝜷 +𝟏) 𝑹 𝑬 𝒊𝒐𝒖𝒕
Bipolar Junction Transistor
Common Common Common
Characteristic
Base Emitter Collector
Input
Low Medium High
Impedance
Output
Very High High Low
Impedance
Phase Angle 0o 180o 0o
Voltage Gain High Medium Low
Current Gain Low Medium High
Power Gain Low Very High Medium
- CE can produce moderate-to-high voltage and current gain and high input impedance.
- CC has a voltage gain near unity and can produce moderate-to-high current gain, moderate-to-high input impedance, and
low output impedance. It is generally used as a Buffer between a high impedance source and a low impedance load.
Otherwise, the voltage across the load would be reduced by the voltage divider effect and the power transferred to the load
would be small.
- CB can produce very high voltage gain but the current gain will be less than unity.