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ppt
Before the next process step, by masking the wafer, the channel regions can be separately implanted. This extra step will allow adjustment of Vtn and Vtp by altering NB locally under each gate.
Gate poly acts as mask and thus alignment of gate and source/drain is automatic (self-aligned process).
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Metallization
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p+ contact n+ contact
Entire wafer is covered with a protective layer of glass (passivated), not shown here.
p
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