Electrnica Fsica

a = F
_
1

2
d
2
E
dk
2
_
= F
_

1
m

_
E = E
0
+
1
2

2
E
k
i
k
j
(k
i
k
0
)
2
+

= E
0
+
1
2
_

1
m

_
(k k
0
)
2
E = E
0
+
(p
1
p
01
)
2
2m

1
+
(p
2
p
02
)
2
2m

2
+
(p
3
p
03
)
2
2m

3
E
n
= E
c

m
0
Z
2
e
4
8
2
h
2
_
m

m
0
_
1
n
2
; E
n
= E
c

E
d
n
2
E
D
=
13,6
n
2
_
m

m
0
_
_

_
2
eV
n =
E
C
max
_
E
C
min
N
C
(E)f(E) dE; f(E) =
1
1 +e
EE
F
kT
N
C
(E) =
4
h
3
M (8m

1
m

2
m

3
)
1
2
(E E
C
)
1
2
m

nd
=
_
M
2
m

1
m

2
m

3
_1
3
; n = 2
_
2m

nd
kT
h
2
_3
2
e

E
C
E
F
kT
n = M
C
e

E
C
E
F
kT
; M
C
= 2, 510
19
_
T
300
_3
2
_
m

nd
m
0
_3
2
cm
3
p =
E
V
max
_
E
V
min
N
V
(E)f
p
(E) dE =
E
V
max
_
E
V
min
N
V
(E)(1 f(E)) dE
N
V
(E) = 4
_
2m

pd
h
2
_
3
2
(E
V
E)
1
2
m

pd
=
_
(m

hh
)
3
2
+ (m

lh
)
3
2
_2
3
; p = M
V
e

E
F
E
V
kT
M
V
= 2, 510
19
_
T
300
_3
2
_
m

pd
m
0
_
3
2
cm
3
n
2
i
= np = M
C
M
V
e

E
C
E
V
kT
= M
C
M
V
e

E
g
kT
n = n
i
e

E
i
E
F
kT
; p = n
i
e
E
i
E
F
kT
N
0
D
N
D
=
1
1 +
1
2
e
E
D
E
F
kT
;
N
+
D
N
D
=
1
1 + 2e
E
F
E
D
kT
N
0
A
N
A
=
1
1 +
1
2
e
E
F
E
A
kT
;
N

A
N
A
=
1
1 + 2e
E
A
E
F
kT
E
F
i
=
E
C
+E
V
2
+
1
2
kT ln
M
V
M
C
=
E
C
+E
V
2
+
3
4
kT ln
m

pd
m

nd
E
F
=
E
C
+E
D
2
+
kT
2
ln
N
D
2M
C
; E
F
=
E
C
+E
V
2
+
kT
2
ln
M
V
M
C
N
0
Au
N
Au
=
1
1 +e

E
F
E
D
kT
+e
E
F
E
A
kT
N

Au
N
Au
=
e
E
F
E
A
kT
1 +e

E
F
E
D
kT
+e
E
F
E
A
kT
N
+
Au
N
Au
=
e

E
F
E
D
kT
1 +e

E
F
E
D
kT
+e
E
F
E
A
kT
v
d
=
e
c
m

n
=
n
; v
d
=
q
c
m

p
=
e
c
m

p
=
p

n
=
q
c

n
;
p
=
q
c

p
; = q(n
n
+p
p
) =
1

J
der
= J
der
n
+J
der
p
= q(n
n
+p
p
) =
J
dif
= J
dif
n
+J
dif
p
= eD
n

r
n eD
p

r
p
R
H
= r
H
p
2
p
n
2
n
e(n
n
+p
p
)
2
;
1

i
1

i
;
1

i
1

i
=
1
e
dE
C
dx
=
1
e
dE
V
dx
; U
i
= (np n
0
p
0
) = (np n
2
i
)
U
i
=
n

i
; U =

i
U
i
=
n

; R
s
= S
p
p
s
D
n

n
=
kT
q
;
D
p

p
=
kT
q

H
= R
H
(jB)
p
t
=
1
e
div J
p
r
p
+g
p
;
n
t
=
1
e
div J
n
r
n
+g
n
J
p
= e
p
p eD
n

r
p; J
n
= e
n
n +eD
n

r
n
=

0
n
p
t
= D
n
d
2
n
p
dx
2

n
p

n
+g
L
p
n
t
= D
p
d
2
p
n
dx
2

p
n

p
+g
L
Junci PN
=
(x)

=
e

_
N
+
D
(x) N

A
(x) +p(x) n(x)

I
(x) =
eN
A
2
(x +
p
)
2

II
=
eN
D
2
x
2
+
eN
D

n
x +
eN
A
2

2
p

I
=
eN
A

(x +
p
);
II
=
eN
D

(
n
x)
W =
n
+
p
=

2
e
_
N
A
+N
D
N
A
N
D
_
V
B

n
=
N
A
N
D
+N
A
W;
p
=
N
D
N
D
+N
A
W
|eV
B
| = E
g
kT ln
M
C
M
V
N
D
N
A
= kT ln
N
D
N
A
n
2
i
(T)
p
n
(0) = p
n
0
_
e
eV
kT
1
_
n
p
(0) = n
p
0
_
e
eV
kT
1
_
p(x) = p
n
0
_
e
eV
kT
1
_
e

x
L
p
n(x) = n
p
0
_
e
eV
kT
1
_
e
x
L
n
L
2
= D; J
Total
= e
_
D
n
n
p
0
L
n
+
D
p
p
n
0
L
p
_
_
e
eV
kT
1
_
I = I
0
_
e
eV
kT
1
_
; I
0
= eAn
2
i
_
D
n
L
n
1
N
A
+
D
p
L
p
1
N
D
_
C =

W
A
W =

2
e
_
1
N
A
+
1
N
D
_
(V
B
V )
Transistor Bipolar
I
E
= I
E
p
+I
E
n
; I
C
= I
C
p
+I
C
n
I
B
= I
E
I
C
= I
E
n
+ (I
E
p
I
C
p
) I
C
n
=
I
E
p
I
E
;
T
=
I
C
p
I
E
p

DC
=
I
C
I
E

=
I
C
p
I
E
p
+I
E
n
=
_
I
E
p
I
E
_
I
C
p
I
E
p
=
T

DC
=
I
C
I
B
=

DC
1
DC
I
C
= I
C
n
+I
C
p
=
DC
I
E
+I
C
n
=
DC
I
E
+I
CBO
I
C
=
DC
(I
B
+I
C
) +I
CBO
=
DC
I
B
+I
CBO
(1 +
DC
) =
DC
I
B
+I
CEO
I
C

DC
I
B
n
E
(x) = n
E
0
_
e
eV
EB
kT
1
_
e

x
L
E
n
C
(x) = n
C
0
_
e
eV
CB
kT
1
_
e

x
L
C
p
B
(x) = p
B
(0)
_
p
B
(0) p
B
(W)
W
_
x
p
B
(0) = p
B
0
_
e
eV
EB
kT
1
_
; p
B
(W) = p
B
0
_
e
eV
CB
kT
1
_
I
E
= eA
_
D
E
n
E
0
L
E
+
D
B
p
B
0
W
_
_
e
eV
EB
kT
1
_

eAD
B
W
p
B
0
_
e
eV
CB
kT
1
_
I
C
=
eAD
B
W
p
B
0
_
e
eV
EB
kT
1
_
eA
_
D
C
n
C
0
L
C
+
D
B
p
B
0
W
_
_
e
eV
CB
kT
1
_
I
B
= I
E
I
C
=
eAD
E
L
E
n
E
0
_
e
eV
EB
kT
1
_
+
eAD
C
L
C
n
C
0
_
e
eV
CB
kT
1
_
I
B
2
=
Q
B

B
=
eA

B
W
_
0
p
B
(x) dx =
eAW
2
B
p
B
0
__
e
eV
EB
kT
1
_
+
_
e
eV
CB
kT
1
__
I
B
(quasiideal)
= eA
_
D
E
n
E
0
L
E
+
Wp
B
0
2
B
_
_
e
eV
EB
kT
1
_
+eA
_
D
C
n
C
0
L
C
+
Wp
B
0
2
B
_
_
e
eV
CB
kT
1
_

DC
=
1
1 +
D
E
D
B
N
DB
N
AE
W
L
E
;
DC
=
D
B
D
E
N
AE
N
DB
L
E
W
Dispositius MOS
V
th
= V
FB
+ 2
B

Q
S
(2
B
)
C
OX
; V
FB
=
ms

Q
OX
C
OX
Q
S
(2
B
)
C
OX
=
d
OX

OX
_
4
Si
N
D
kT ln
N
D
n
i
_1
2
I
D
=
C
OX

n
Z
L
_
V
GS
V
th

V
DS
2
_
V
DS
I
DSAT
=
C
OX

n
Z
2L
(V
GS
V
th
) ;
B
=
kT
q
ln
N
D
n
i
Departament dElectrnica Universitat de Barcelona