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  • Far Mu La

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    This document contains summaries of formulas and concepts relating to electrical components and semiconductor physics. It defines formulas for resistance, the effect of temperature on resistivity, capacitance and how it changes with frequency, inductance and the coefficient of self inductance. It also defines transformers and their relationships between voltages and currents. Finally, it summarizes the differences between insulators, semiconductors, and conductors based on their forbidden energy gaps or overlap of valence and conduction bands, and provides the diode current formula.

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    This document contains summaries of formulas and concepts relating to electrical components and semiconductor physics. It defines formulas for resistance, the effect of temperature on resistivity, capacitance and how it changes with frequency, inductance and the coefficient of self inductance. It also defines transformers and their relationships between voltages and currents. Finally, it summarizes the differences between insulators, semiconductors, and conductors based on their forbidden energy gaps or overlap of valence and conduction bands, and provides the diode current formula.

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    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    19 views1 page

    Far Mu La

    Uploaded by

    alokanita
    This document contains summaries of formulas and concepts relating to electrical components and semiconductor physics. It defines formulas for resistance, the effect of temperature on resistivity, capacitance and how it changes with frequency, inductance and the coefficient of self inductance. It also defines transformers and their relationships between voltages and currents. Finally, it summarizes the differences between insulators, semiconductors, and conductors based on their forbidden energy gaps or overlap of valence and conduction bands, and provides the diode current formula.

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    Attribution Non-Commercial (BY-NC)
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    of 1

    RESISTANCE

    R= ρl/A
    EFFECT OF TEMPERATURE ON RESISTIVITY
    Rt=Ro(1+αt)
    CAPACITOR
    C=q/v
    CHANGE OF CAPACITANCE WITH FREQUENCY
    Ceff =C(1+ω2LC)
    NDUCTOR
    COEFFICIENT OF SELF INDUCTANCE
    E = -L di/dt
    Here L is coefficient of self inductance.
    L = μoμr N2A henary
    l
    μo= PERMABILITY OF AIR
    μr= RELATIVE PERMABILITY OF IRON CORE
    N= NUMBER OF TURN
    l = LENGTH OF COIL
    A=AREA

    TRANSFORMER
    E1 = N1 = I2 = 1
    E2 N2 I1 K

    SEMICONDUCTOR PHYSICS
    INSULATOR
    Energy Gap = 6eV (Forbidden energy gap)
    Resistivity = Very high

    SEMICONDUCTOR
    Forbidden energy gap= 1eV
    At 0K Germanium =0.785eV
    At 0K Silicon =1.21eV
    At low temperature these are behave as an insulator.

    CONDUCTOR
    No Forbidden band
    Overlap between valance and conduction band

    SEMICONDUCTOR DIODE
    DIODE CURRENT
    I=I0eqV/nkT
    I=forward current of diode in ampere
    I0= reverse current at T0K
    V=forward bias voltage
    q= charge at electron (1.6 x 10-19 coulomb)
    k=boltzman constant (1.38 x 10-23 J/0K)
    n=1 for ger.
    n=2 for silicon

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