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NPN Epitaxial Silicon Transistor: Switching and Amplifier Applications
NPN Epitaxial Silicon Transistor: Switching and Amplifier Applications
BC337/338
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC327/BC328
TO-92
Parameter
Collector-Emitter Voltage
: BC337
: BC338
Value
Units
50
30
V
V
45
25
V
V
Collector-Emitter Voltage
: BC337
: BC338
VCEO
VEBO
Emitter-Base Voltage
IC
800
mA
PC
625
mW
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 ~ 150
Parameter
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Test Condition
IC=10mA, IB=0
IC=0.1mA, VBE=0
BVEBO
IE=0.1mA, IC=0
ICES
VCE=45V, IB=0
VCE=25V, IB=0
BVCES
Min.
Typ.
Max.
Units
45
25
V
V
50
30
V
V
V
2
2
100
60
100
100
nA
nA
630
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE (sat)
IC=500mA, IB=50mA
0.7
VBE (on)
VCE=1V, IC=300mA
1.2
fT
100
MHz
Cob
Output Capacitance
12
pF
V
V
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
BC337/338
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1