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  • Tutorial 2

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    Mudassar Meer
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    This document contains two tutorial problems involving analyzing transistor circuits. The first problem involves a transistor with β = 30, finding Vo for different values of Vi and resistor R1, and determining if the transistor is in saturation, active, or cutoff regions. The second problem involves a transistor with β = 100, finding if it is in cutoff, saturation, or active region based on the given circuit, calculating Vo, and determining the minimum emitter resistor value for the transistor to be in the active region.

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    This document contains two tutorial problems involving analyzing transistor circuits. The first problem involves a transistor with β = 30, finding Vo for different values of Vi and resistor R1, and determining if the transistor is in saturation, active, or cutoff regions. The second problem involves a transistor with β = 100, finding if it is in cutoff, saturation, or active region based on the given circuit, calculating Vo, and determining the minimum emitter resistor value for the transistor to be in the active region.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    9 views1 page

    Tutorial 2

    Uploaded by

    Mudassar Meer
    This document contains two tutorial problems involving analyzing transistor circuits. The first problem involves a transistor with β = 30, finding Vo for different values of Vi and resistor R1, and determining if the transistor is in saturation, active, or cutoff regions. The second problem involves a transistor with β = 100, finding if it is in cutoff, saturation, or active region based on the given circuit, calculating Vo, and determining the minimum emitter resistor value for the transistor to be in the active region.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    TUTORIAL 2 1.

    If the silicon transistor used in the circuit shown has a minimum value of = hFE of 30 and if ICBO = 10 nA at 25C: (a) Find Vo for Vi = 12 V and show that Q is in saturation. (b) Find the minimum value of R1 for which the transistor in part a is in the active region. (c) If R1 = 15 K and Vi = 1 V, find Vo and show that Q is a t cutoff. (d) Find the maximum temperature at which the transistor in part c remains at cutoff.

    2. For the circuit shown, assume = hFE= 1 00. (a) Find if the silicon transistor is in cutoff, saturation, or in the active region. (b) Find Vo (c) Find the minimum value for the emitter resistor Re for which the transistor operates in the active region.

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