Memristcr - 1he FourLh FundamenLal

CircuiL FlemenL
lntroduotion
P CurrenLly known undamenLal passive elemenLs
- ResisLors, CapaciLors & lnducLors.
P Does a 4
Lh
passive elemenL exisL..
P Leon O. Chua ormulaLed MemrisLor Lheory in
his paper "MemrisLor-1he Missing CircuiL
FlemenL" in 97.
P MemisLors are passive Lwo Lerminal circuiL
elemenLs.
P 8ehaves like a nonlinear resisLor wiLh memory.
istory 0f Memristor
P Four undamenLal circuiL variables- currenL i,
volLage v, charge q, and lux linkage
P $ix possible combinaLions o Lhese our
variables
P Five already deined as
ResisLor(/v=R/i), CapaciLor(/q=C/v),
lnducLor(/=l/i), q(t)=ji(1)/1, (t)=jv(1)/1
P 1he 6
Lh
relaLion deines memrisLance as
/=M/q
RelaLion beLween undamenLal circuiL
elemenLs and variables
$o whaL is MemrisLance
P MemrisLance is a properLy o an elecLronic
componenL.
P When charge lows in one direcLion, iLs
resisLance increases, and i direcLion is reversed,
resisLance decreases.
P When v=0, charge low sLops & componenL will
'remember' Lhe lasL resisLance iL had.
P When Lhe low o charge regains, Lhe resisLance
o Lhe circuiL will be Lhe value when iL was lasL
acLive.
Memristor 1heory
P 1wo Lerminal device in which magneLic lux 1m
beLween iLs Lerminals is a uncLion o amounL o elecLric
charge q passed Lhrough Lhe device.
P M(q) = dmdq
P M(q) = [/m//tj / [/q//tj = v/l
P v(t) = M(q(t))l(t)
P 1he memrisLor is sLaLic i no currenL is applied.
P l l(t)=0, Lhen v(t)=0 and M(t) is a consLanL. 1his is Lhe
essence o Lhe memory eecL.
!hysical analogy or a
memrisLor
P ResisLor is analogous Lo a pipe LhaL carries waLer.
P WaLer(charge q), inpuL pressure(volLage v), raLe o low
o waLer(currenL i).
P ln case o resisLor, low o waLer is asLer i pipe is
shorLer andor has a larger diameLer.
P MemrisLor is analogous Lo a special kind o pipe LhaL
expands or shrinks when waLer lows Lhrough iL
P 1he pipe is direcLive in naLure.
P l waLer pressure is Lurned o, pipe will reLain iLs mosL
recenL diameLer, unLil waLer is Lurned back on.
1iLanium dioxide memrisLor
P On April 30, 2008, a Leam aL H! Labs led by Lhe scienLisL
R. $Lanley Williams announced Lhe discovery o a
swiLching memrisLor.
P lL achieves a resisLance dependenL on Lhe hisLory o
currenL using a chemical mechanism.
P 1he H! device is composed o a Lhin (5nm) 1iLanium
dioxide ilm beLween Lwo !L elecLrodes.
P lniLially Lhere are Lwo layers, one slighLly depleLed o
Oxygen aLoms, oLher non-depleLed layer.
P 1he depleLed layer has much lower resisLance Lhan Lhe
non-depleLed layer.
Microscopic image o memrisLor row
P 3 ctcmic jcrce micrcscce imce cj c simle circuit with 17 memristcrs
li3e/ u i3 c rcw. lcch memristcr hcs c bcttcm wire thct cc3tccts c3e si/e
cj the /evice c3/ c tc wire thct cc3tccts the ccsite si/e. 1he /evices cct
cs 'memcry resistcrs', with the resistc3ce cj ecch /evice /ee3/i3 c3 the
cmcu3t cj chcre thct hcs mcve/ thrcuh ecch c3e. 1he wires i3 this imce
cre S0 3m wi/e, cr cbcut 1S0 ctcms i3 tctcl wi/th.
; oharaoteristios
v-i chara..(conL.)
P 1he mosL common v-i Lrace is a 'igure 8' or a 'pinched
loop'
P For Lhis currenL i=0, when volLage v=0.
P On Lhe applicaLion o elecLric ield, oxygen vacancies
driL, changing boundary beLween high & low
resisLance layers.
P MemrisLance is only displayed when Lhe doped layer &
depleLed layer boLh conLribuLe Lo resisLance.
P 1he device enLers hysLeresis when enough charge has
passed Lhrough memrisLor & ions can no longer move.
ConLribuLion o H! Labs
P H! Lab scienLisLs were irsL Lo observe Lhe
'memrisLive behaviour' in maLerials.
P lnLroduced Lhe LiLanium dioxide memrisLor.
P lnLroduced memrisLance ormula or devices.
MemrisLance ormula
P For linear ionic driL in a uniorm ield wiLh average ion
mobiliLy bv,
P 1he 2
nd
Lerm in Lhe parenLheses which conLribuLe more
Lo memrisLance becomes larger when D is in Lhe
nanomeLer range.
P 1hus memrisLance is imporLanL characLerisLics o a
device when criLical dimension shrink Lo nanomeLer
scale.
OperaLion as a swiLch
P For some memrisLors, applied currenL or volLage will
cause a greaL change in resisLance.
P 1he semiconducLor ilm has a region o high conc. o
dopanLs having low resisLance RON & remaining porLion
having zero dopanL conc. and much higher resisLance
ROFF.
P 8y applicaLion o exLernal bias, we can move Lhe
boundary Lo adjusL Lhe device resisLance rom RON Lo
ROFF.
ApplicaLions & AdvanLages
P can now Lhink abouL abricaLing a non-volaLile random
access memory (RAM) - or memory chips LhaL don'L
orgeL Lhe daLa when a compuLer is shuL o. MemrisLors
carries a memory o iLs pasL.
P Replace Loday's commonly used dynamic random
access memory (DRAM).
P Denser cells allow memrisLor circuiLs Lo sLore more daLa
Lhan lash memory.
P 1he HewleLL-!ackard Leam has successully creaLed
working circuiLs based on memrisLors LhaL are as small
as 5 nanomeLers. UlLimaLely, iL will be possible Lo make
memrisLors as small as abouL our nanomeLers.
ApplicaLions & AdvanLages..(conL.)
P A memrisLor circuiL requires lower volLage, less power
and less Lime Lo Lurn on Lhan compeLiLive memory like
DRAM and lash.
P lL does noL require power Lo mainLain iLs memory.
P 1he abiliLy Lo sLore and reLrieve a vasL array o
inLermediaLe values also pave Lhe way Lo a compleLely
dierenL class o compuLing capabiliLies like an analog
compuLer in which you don'L use s and 0s only.
!racLical limiLaLions o memrisLor
P 1he mosL signiicanL limiLaLion is LhaL Lhe memrisLors
uncLions aL abouL one-LenLh Lhe speed o Loday's
DRAM memory cells.
P 1he graphs in William's reporL shows swiLching
operaLion aL only Hz.
P AlLhough small dimension o device seems Lo imply asL
operaLion, Lhe charge carriers move very slowly
Conclusion
P 1he rich hysLereLic v-i characLerisLics deLecLed in many
Lhin ilm devices can now be undersLood as memrisLive
behaviour.
P 1his behaviour is more relevanL as acLive region in
devices shrink Lo nanomeLer Lhickness.
P lL Lakes a loL o LransisLors and capaciLors Lo do Lhe job
o a single memrisLor.
P No combinaLion o R,L,C circuiL could duplicaLe Lhe
memrisLance.
P $o Lhe memrisLor qualiies as a undamenLal circuiL
elemenL.