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SSW2N60B / SSI2N60B: 600V N-Channel MOSFET
SSW2N60B / SSI2N60B: 600V N-Channel MOSFET
Features
D2-PAK
G D S
SSW Series
G!
I2-PAK
SSI Series
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
SSW2N60B / SSI2N60B
600
Units
V
2.0
Drain Current
- Pulsed
(Note 1)
1.3
6.0
VGSS
Gate-Source Voltage
30
EAS
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
2.0
EAR
(Note 1)
5.4
5.5
3.13
mJ
V/ns
W
54
0.43
-55 to +150
W
W/C
C
300
dv/dt
PD
TJ, Tstg
TL
(Note 3)
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
2.32
Units
C/W
RJA
--
40
C/W
RJA
--
62.5
C/W
SSW2N60B / SSI2N60B
November 2001
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
--
0.65
--
V/C
--
--
10
--
--
100
VGS = 30 V, VDS = 0 V
--
--
100
nA
--
--
-100
nA
2.0
--
4.0
--
3.8
5.0
--
2.05
--
--
380
490
pF
--
35
46
pF
--
7.6
9.9
pF
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 A
BVDSS
/
TJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 1.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
--
16
40
ns
--
50
110
ns
--
40
90
ns
--
40
90
ns
--
12.5
17
nC
--
2.2
--
nC
--
5.4
--
nC
--
--
2.0
ISM
--
--
6.0
VSD
--
--
1.4
trr
Qrr
VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/s
(Note 4)
--
250
--
ns
--
1.31
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 55mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 2.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
SSW2N60B / SSI2N60B
Electrical Characteristics
SSW2N60B / SSI2N60B
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
Top :
-1
10
10
150 C
25 C
o
-55 C
Notes :
1. 250 s Pulse Test
2. TC = 25
-1
-2
10
Notes :
1. VDS = 40V
2. 250 s Pulse Test
-1
10
10
10
10
10
18
VGS = 10V
RDS(ON) [ ],
Drain-Source On-Resistance
15
12
VGS = 20V
9
10
150
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
Note : TJ = 25
-1
0
0
10
0.2
0.4
0.6
1.0
1.2
1.4
800
12
VDS = 120V
600
Ciss
400
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
200
Crss
10
Capacitance [pF]
0.8
VDS = 300V
8
VDS = 480V
2
Note : ID = 2.0 A
0
-1
10
10
10
10
12
14
SSW2N60B / SSI2N60B
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 1.0 A
0.5
0.0
-100
200
-50
50
100
150
200
2.0
Operation in This Area
is Limited by R DS(on)
10
1.6
100 s
1 ms
10 ms
10
1.2
DC
0.8
-1
10
Notes :
0.4
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.0
25
-2
10
10
10
10
10
50
100
125
150
D = 0 .5
N o te s :
1 . Z J C (t) = 2 .3 2 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .2
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
JC
(t), T h e rm a l R e s p o n s e
10
75
PDM
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
SSW2N60B / SSI2N60B
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
SSW2N60B / SSI2N60B
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
10V
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
VSD
VDD
Body Diode
Forward Voltage Drop
SSW2N60B / SSI2N60B
Package Dimensions
4.50 0.20
9.90 0.20
+0.10
2.00 0.10
2.54 TYP
(0.75)
~3
0.80 0.10
1.27 0.10
2.54 0.30
15.30 0.30
0.10 0.15
2.40 0.20
4.90 0.20
1.40 0.20
9.20 0.20
1.30 0.05
1.20 0.20
(0.40)
D2-PAK
+0.10
0.50 0.05
2.54 TYP
9.20 0.20
(2XR0.45)
4.90 0.20
15.30 0.30
10.00 0.20
(7.20)
(1.75)
10.00 0.20
(8.00)
(4.40)
0.80 0.10
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation
SSW2N60B / SSI2N60B
Package Dimensions
(Continued)
I2-PAK
4.50 0.20
(0.40)
9.90 0.20
+0.10
MAX13.40
9.20 0.20
(1.46)
1.20 0.20
1.30 0.05
0.80 0.10
2.54 TYP
2.54 TYP
10.08 0.20
1.47 0.10
MAX 3.00
(0.94)
13.08 0.20
)
5
(4
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H4