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I N
KTU NOT
S
“Polysilicon & thinox interact
E . I N
so that a MOS
U N OT
KT where they cross one another”
transistor is formed
Contact
Layers may be joined together where contacts
are formed
S . I N
T U N OTE
K
S . I N
T U N OTE
K
S . I N
T U N OTE
K
S . I N
Next, green pathsT U N
are OTE
drawn b/w the metal
K
rails for inverters
S . I N
T U N OTE
K
Circuit Diagram
S . I N
T U N OTE
K
The implant (yellow) is
for depletion mode
transistors
L : W is length to width
ratio is also shown
S . I N
T U N OTE
K
S . I N
T U N OTE
K
Stick Diagram of
nMOS NAND Gate
Downloaded from Ktunotes.in
Circuit Diagram
S . I N
T U N OTE
K
Stick Diagram of
nMOS NOR Gate
Downloaded from Ktunotes.in
CMOS Design Style
Demarcation Line
A line used to separate ‘n-MOS’ and ‘p-MOS’
transistors in the stick layout
S .
Demarcation Line represents
E I N the p-well
U N OT
KT which all p-type devices are
boundary above
placed
S . I N
T U N OTE
K
Stick Diagram of
CMOS INVERTER
Downloaded from Ktunotes.in
Stick Diagram of CMOS INVERTER
S . I N
T U N OTE
K
S . I N
T U N OTE
K
Stick Diagram of
CMOS Nor Gate
Downloaded from Ktunotes.in
Stick Diagram of
CMOS NOR gate
S . I N
T U N OTE
K
S . I N
T U N OTE
K
Stick Diagram of
CMOS Nand Gate
Downloaded from Ktunotes.in
S . I N
T U N OTE
K