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Ao4614 PDF
Ao4614 PDF
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
SOIC-8 S2 S1
n-channel p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 6 -5
Current A TA=70°C ID 5 -4 A
B
Pulsed Drain Current IDM 20 -20
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 20
10V 5V
VDS=5V
25 4.5V
15
20
4V
ID (A)
ID(A)
15 10 125°C
10
VGS=3.5V 5 25°C
5
0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50 1.8
VGS=10V
ID=6A
Normalized On-Resistance
1.6
40
RDS(ON) (mΩ)
VGS=4.5V VGS=4.5V
1.4
ID=5A
30 1.2
VGS=10V
1
20
0 5 10 15 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
80 1.0E+01
ID=6A
70
1.0E+00
60
1.0E-01 125°C
RDS(ON) (mΩ)
50
IS (A)
125°C 1.0E-02
40
1.0E-03 25°C
30
20 1.0E-04
25°C
10
2 4 6 8 10 1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
10 800
VDS=20V
8 ID= 6A
600
Capacitance (pF)
Ciss
VGS (Volts)
6
400
4 Coss
200 Crss
2
0 0
0 2 4 6 8 10 0 10 20 30 40
100.0
40
RDS(ON) TJ(Max)=150°C
limited TA=25°C
10µs
30
10.0 100µs
Power (W)
ID (Amps)
10ms 1ms
20
1s
1.0
10s 0.1s
TJ(Max)=150°C 10
TA=25°C DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any agiven
givenapplication
applicationdepends
dependson onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet≤t≤10s
10sthermal
thermalresistance
resistancerating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 25
-10V -5V VDS=-5V
-4.5V
25
20
-6V -4V
20
15
-ID (A)
-ID(A)
15
-3.5V
10
10 125°C
VGS=-3V 25°C
5 5
0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60 1.8
55 VGS=-10V
Normalized On-Resistance
VGS=-4.5V 1.6
ID=-5A
50
RDS(ON) (mΩ)
1.4
45
VGS=-4.5V
1.2 ID=-4A
40
VGS=-10V
35 1
30 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage
160 1.0E+01
120 125°C
1.0E-01
RDS(ON) (mΩ)
100 125°C
1.0E-02
-IS (A)
80
1.0E-03
60
1.0E-04
40 25°C
25°C
20 1.0E-05
2 3 4 5 6 7 8 9 10
1.0E-06
-VGS (Volts)
0.0 0.2 0.4 0.6 0.8 1.0
Figure 5: On-Resistance vs. Gate-Source Voltage
-VSD (Volts)
Figure 6: Body-Diode Characteristics
10 1000
VDS=-20V
8 ID=-5A
800
Ciss
Capacitance (pF)
-VGS (Volts)
6 600
4
400
Coss
Crss
2
200
0
0
0 5 10 15
0 10 20 30 40
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 100µs 10µs 30
10.0 limited 1ms
Power (W)
-ID (Amps)
10ms
0.1s 20
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance