PD - 97576

IRGP4066DPbF
IRGP4066D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology C
VCES = 600V
• Low Switching Losses
• Maximum Junction Temperature 175 °C IC(Nominal) = 75A
• 5 μS short circuit SOA
• Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
E VCE(on) typ. = 1.70V
• Tight Parameter Distribution
• Lead Free Package n-channel

Benefits C C
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to E E
Low VCE (ON) and Low Switching Losses C C
G G
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD
IRGP4066DPbF IRGP4066D-EPbF

G C E
Gate Collector Emitter

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 140
IC @ TC = 100°C Continuous Collector Current 90
INOMINAL Nominal Current 75
ICM Pulse Collector Current, VGE = 15V 225 A
ILM Clamped Inductive Load Current, VGE = 20V c 300
IF @ TC = 25°C Diode Continous Forward Current 140
IF @ TC = 100°C Diode Continous Forward Current 90
IFM Diode Maximum Forward Current d 300
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 454 W
PD @ TC = 100°C Maximum Power Dissipation 227
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.33 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f ––– ––– 1.0
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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IRGP4066DPbF/IRGP4066D-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA e
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 2.0mA (25°C-175°C)
— 1.70 2.10 IC = 75A, VGE = 15V, TJ = 25°C d
VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 75A, VGE = 15V, TJ = 150°C d
— 2.1 — IC = 75A, VGE = 15V, TJ = 175°C d
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 2.1mA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 2.1mA (25°C - 175°C)
gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 60μs
ICES Collector-to-Emitter Leakage Current — 1.0 100 μA VGE = 0V, VCE = 600V
— 1040 — VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 2.23 3.0 V IF = 75A
— 1.8 — IF = 75A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±200 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 150 225 IC = 75A
Qge Gate-to-Emitter Charge (turn-on) — 40 60 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V
Eon Turn-On Switching Loss — 2465 3360 IC = 75A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss — 2155 3040 μJ RG = 10Ω, L = 200μH, TJ = 25°C
Etotal Total Switching Loss — 4620 6400 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 50 70 IC = 75A, VCC = 400V, VGE = 15V
tr Rise time — 70 90 ns RG = 10Ω, L = 200μH, TJ = 25°C
td(off) Turn-Off delay time — 200 225
tf Fall time — 60 80
Eon Turn-On Switching Loss — 3870 — IC = 75A, VCC = 400V, VGE=15V
Eoff Turn-Off Switching Loss — 2815 — μJ RG=10Ω, L=200μH, TJ = 175°C
Etotal Total Switching Loss — 6685 — Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 50 — IC = 75A, VCC = 400V, VGE = 15V
tr Rise time — 70 — ns RG = 10Ω, L = 200μH
td(off) Turn-Off delay time — 240 — TJ = 175°C
tf Fall time — 70 —
Cies Input Capacitance — 4440 — pF VGE = 0V
Coes Output Capacitance — 245 — VCC = 30V
Cres Reverse Transfer Capacitance — 130 — f = 1.0Mhz
TJ = 175°C, IC = 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ” 600V
Rg = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp ”600V
Rg = 10Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 470 — μJ TJ = 175°C
trr Diode Reverse Recovery Time — 155 — ns VCC = 400V, IF = 75A
Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10Ω, L = 60μH

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.

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 IRGP4066DPbF/IRGP4066D-EPbF
140 400

120

300
100

80

Ptot (W)
IC (A)

200
60

40
100

20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C (°C)
T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100 100μsec 10μsec

100
1msec
IC (A)

IC (A)

10
DC

10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V TJ = 175°C; VGE =20V

300 300

250 250

VGE = 18V
200 200 VGE = 18V
VGE = 15V
VGE = 15V
VGE = 12V
ICE (A)
ICE (A)

VGE = 12V
150 VGE = 10V 150
VGE = 10V
VGE = 8.0V
VGE = 8.0V
100 100

50 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60μs TJ = 25°C; tp = ≤60μs

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IRGP4066DPbF/IRGP4066D-EPbF
300 300
VGE = 18V
250 VGE = 15V 250
VGE = 12V
VGE = 10V
200 200
VGE = 8.0V
ICE (A)

IF (A)
150 150

100 100 -40°C

25°C
175°C
50 50

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = ≤60μs tp = 80μs
20 20
18 18
16 16
14 14
12 ICE = 38A 12
VCE (V)

VCE (V)

ICE = 38A
10 ICE = 75A 10 ICE = 75A
ICE = 150A
8 8 ICE = 150A

6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 300
18
IC, Collector-to-Emitter Current (A)

250
16 T J = 25°C
14 T J = 175°C
200
12
VCE (V)

ICE = 38A
10 150
ICE = 75A
8 ICE = 150A
100
6
4 50
2
0 0
5 10 15 20 4 6 8 10 12 14 16 18

VGE (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 60μs

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 IRGP4066DPbF/IRGP4066D-EPbF
12000 1000

10000
tdOFF

Swiching Time (ns)

8000
Energy (μJ)

EON
tF
6000 100

4000
EOFF tdON

2000 tR

0 10
0 25 50 75 100 125 150 0 50 100 150

IC (A) IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
11000 10000

9000

Swiching Time (ns)

1000
7000 tdOFF
Energy (μJ)

EON tF
5000
tR
100
EOFF
3000 tdON

1000 10
0 25 50 75 100 0 20 40 60 80 100 120
RG (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
35 30

RG = 5.0Ω
30

RG = 10Ω 25
25
IRR (A)

IRR (A)

20 RG = 47Ω
20

15
RG = 100Ω

10 15
20 40 60 80 100 120 140 160 0 20 40 60 80 100
IF (A) RG (Ω)

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C

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IRGP4066DPbF/IRGP4066D-EPbF
30 3000
5.0Ω
150A 10Ω

47Ω
25 2500

QRR (nC)
100Ω 75A
IRR (A)

38A
20 2000

15 1500
200 300 400 500 600 700 200 300 400 500 600 700

diF /dt (A/μs) diF /dt (A/μs)

Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

400 20 800
RG = 10Ω
350 Tsc
15 600
300 RG = 22Ω
Energy (μJ)

Current (A)
Isc
Time (μs)

250 10 400

RG = 47Ω
200
5 200
150 RG = 100Ω

100 0 0
10 20 30 40 50 60 70 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
10000 16

Cies 14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

VCES = 300V
12
1000
Capacitance (pF)

10

Coes 6
100
Cres
4

10 0
0 100 200 300 400 500 0 20 40 60 80 100 120 140 160
VCE (V) Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 75A; L = 485μH

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 IRGP4066DPbF/IRGP4066D-EPbF

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
0.05 R1 R2 R3 R4
R1 R2 R3 R4 Ri (°C/W) τi (sec)
0.01 0.02 τJ τC 0.00738 0.000009
τJ τ
0.01 τ1 0.09441 0.000179
τ2 τ3 τ4
τ1 τ2 τ3 τ4
0.13424 0.002834
Ci= τi/Ri
SINGLE PULSE Ci i/Ri 0.09294 0.0182
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1
Thermal Response ( Z thJC )

D = 0.50
0.20
0.1 0.10
R1 R2 R3 R4
0.05 R1 R2 R3 R4 Ri (°C/W) τi (sec)
τJ τC 0.02738 0.000053
0.02 τJ τ
τ1 τ2 τ3 τ4 0.34077 0.000485
0.01 0.01 τ1 τ2 τ3 τ4
0.41380 0.005203
Ci= τi/Ri
Ci i/Ri 0.22819 0.034407

0.001 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc

0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4066DPbF/IRGP4066D-EPbF

DUT VCC 80 V +
0 - DUT
1K VCC
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

L
4X

DC VCC -5V
DUT / VCC
DUT
DRIVER
Rg

SCSOA

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force

R= VCC
ICM

100K

D1 22K
VCC C sense
DUT
DUT
Rg G force 0.0075μF

E sense

E force
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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 IRGP4066DPbF/IRGP4066D-EPbF

600 120 600 120

tf tr
500 100 500 TEST 100
90% ICE CURRENT
90%
400 80 400 ICE 80

300 60 300 60

VCE (V)
VCE (V)

ICE (A)
ICE (A)
200 40 200 40
5% V CE 10%
5% V CE
ICE
100 20 100 20
5% ICE

0 0 0 Eon 0
Eoff Loss Loss
-100 -20 -100 -20
-0.4 -0.2 0.0 0.2 0.4 0.6 7.6 7.8 8.0 8.2
time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

90 700 700
80
QRR 600 600
70
60 VCE
500 500
50
t RR
40
400 400
30
Vce (V)
V F (V)

ICE (A)
20 300 300
ICE
10
0 200 200
-10
Peak IRR
-20 100 100

-30
0 0
-40
-50 -100 -100
-0.20 -0.10 0.00 0.10 0.20 0.30 0.40 -3 0 3 6 9 12
time (µS) Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 25°C using Fig. CT.3

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IRGP4066DPbF/IRGP4066D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 IRGP4066DPbF/IRGP4066D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5
,17+($66(0%/</,1(+ /2*2 +

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$66(0%/< <($5 

1RWH3LQDVVHPEO\OLQHSRVLWLRQ
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TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010

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