FDMC8884 N-Channel Power Trench® MOSFET

May 2008

FDMC8884 tm
®
N-Channel Power Trench MOSFET
30V, 15A, 19mΩ
Features General Description
„ Max rDS(on) = 19mΩ at VGS = 10V, ID = 9.0A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
„ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.2A
been especially tailored to minimize the on-state resistance. This
„ High performance trchnology for extremely low rDS(on) device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
„ Termination is Lead-free and RoHS Compliant
Battery Packs.

Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook

Top Bottom

S Pin 1
S D 5 4 G
S
G D 6 3 S

D 7 2 S
D
D D 8 1 S
D
D

Power 33

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 15
-Continuous (Silicon limited) TC = 25°C 24
ID A
-Continuous TA = 25°C (Note 1a) 9.0
-Pulsed 40
EAS Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25°C 18
PD W
Power Dissipation TA = 25°C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 6.6
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC8884 FDMC8884 Power 33 13’’ 12mm 3000 units

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMC8884 Rev.C
 FDMC8884 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, referenced to 25°C 22 mV/°C
∆TJ Coefficient
VDS = 24V, VGS = 0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ = 125°C 250
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.9 2.5 V
∆VGS(th) Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C -6 mV/°C
∆TJ Temperature Coefficient
VGS = 10V, ID = 9.0A 16 19
rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 7.2A 22 30 mΩ
VGS = 10V, ID = 9.0A, TJ = 125°C 22 30
gFS Forward Transconductance VDD = 5V, ID = 9.0A 24 S

Dynamic Characteristics
Ciss Input Capacitance 513 685 pF
VDS = 15V, VGS = 0V,
Coss Output Capacitance 110 150 pF
f = 1MHz
Crss Reverse Transfer Capacitance 76 115 pF
Rg Gate Resistance f = 1MHz 1.4 2.1 Ω

Switching Characteristics
td(on) Turn-On Delay Time 6 12 ns
tr Rise Time VDD = 15V, ID = 9.0A, 2 10 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 6Ω 15 27 ns
tf Fall Time 2 10 ns
Total Gate Charge VGS = 0V to 10V 10 14 nC
Qg(TOT)
Total Gate Charge VGS = 0V to 4.5V VDD = 15V 5.0 7.0 nC
Qgs Total Gate Charge ID = 9.0A 1.8 nC
Qgd Gate to Drain “Miller” Charge 2.2 nC

Drain-Source Diode Characteristics

VGS = 0V, IS = 9.0A (Note 2) 0.86 1.2
VSD Source to Drain Diode Forward Voltage V
VGS = 0V, IS = 1.6A (Note 2) 0.76 1.2
trr Reverse Recovery Time 13 18 ns
IF = 9.0A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 3 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 53°C/W when mounted on a b. 125°C/W when mounted on a

1 in2 pad of 2 oz copper minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting TJ = 25oC; N-ch: L = 1mH, IAS = 7A, VDD = 30V, VGS = 10V.

FDMC8884 Rev.C 2 www.fairchildsemi.com

 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
40 4
VGS = 10V PULSE DURATION = 80µs

DRAIN TO SOURCE ON-RESISTANCE

VGS = 4.5V VGS = 3.5V DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS = 6V
30 3
ID, DRAIN CURRENT (A)

NORMALIZED
PULSE DURATION = 80µs VGS = 4V
DUTY CYCLE = 0.5%MAX VGS = 4.5V
20 2

VGS = 3.5V
10 1
VGS = 10V
VGS = 6V

0 0
0.0 0.5 1.0 1.5 2.0 0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.8 80
ID = 9.0A
DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80µs

SOURCE ON-RESISTANCE (mΩ)

VGS = 10V
1.6 DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO 60
1.4 ID = 9.0A
NORMALIZED

1.2 40
TJ = 125oC
1.0
20
0.8
TJ = 25oC

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

40 60
PULSE DURATION = 80µs
IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5%MAX VGS = 0V

10
30
ID, DRAIN CURRENT (A)

VDS = 5V

1 TJ = 150oC

20 TJ = 25oC
0.1
TJ = 150oC TJ = 25oC TJ = -55oC
10
0.01
TJ = -55oC
0 0.001
0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC8884 Rev.C 3 www.fairchildsemi.com

 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 1000
ID = 9.0A
VGS, GATE TO SOURCE VOLTAGE(V)

8 VDD = 20V
Ciss

CAPACITANCE (pF)
VDD = 15V
6
VDD = 10V
Coss
4

100
2
f = 1MHz
VGS = 0V Crss
0 50
0 3 6 9 12 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 25
IAS, AVALANCHE CURRENT(A)

20
ID, DRAIN CURRENT (A)
10
VGS = 10V
TJ = 25oC
15

Limited by Package
TJ = 100oC 10
TJ = 125oC VGS = 4.5V

5
o
RθJC = 6.6 C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

60 100
P(PK), PEAK TRANSIENT POWER (W)

10 VGS = 10V SINGLE PULSE

ID, DRAIN CURRENT (A)

100µs RθJA = 125oC/W

TA = 25oC
1ms 10
1
THIS AREA IS 10ms
LIMITED BY rDS(on) 100ms
SINGLE PULSE 1s
0.1 TJ = MAX RATED 10s
o
RθJA = 125 C/W DC 1
TA = 25oC
0.01 0.5
-3 -2 -1 0 1
0.01 0.1 1 10 100 10 10 10 10 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

FDMC8884 Rev.C 4 www.fairchildsemi.com

 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
DUTY CYCLE-DESCENDING ORDER
1
NORMALIZED THERMAL

D = 0.5
IMPEDANCE, ZθJA

0.2
0.1 PDM
0.05
0.02
0.1
0.01
t1
t2
SINGLE PULSE NOTES:
o DUTY FACTOR: D = t1/t2
RθJA = 125 C/W PEAK TJ = PDM x ZθJA x RθJA + TA

0.01
-3 -2 -1 0 1
10 10 10 10 10 100 1000
t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDMC8884 Rev.C 5 www.fairchildsemi.com

 FDMC8884 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout

FDMC8884 Rev.C 6 www.fairchildsemi.com

 FDMC8884 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP-SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench® tm

CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™

CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™ MICROCOUPLER™ SMART START™ µSerDes™
MicroFET™ SPM®
®
tm
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SuperMOS™ VisualMax™
®
FastvCore™ ®
FlashWriter® *
tm

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
This datasheet contains the design specifications for product development.
Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Not In Production
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDMC8884 Rev.C 7 www.fairchildsemi.com