AON4407

12V P-Channel MOSFET

General Description Features

The AON4407 uses advanced trench technology to VDS (V) = -12V

provide excellent RDS(ON), low gate charge and operation ID = -9 A (VGS = -4.5V)
with gate voltages as low as 1.8V. This device is suitable RDS(ON) < 20mΩ (VGS = -4.5V)
for use as a load switch. RDS(ON) < 25mΩ (VGS = -2.5V)
RDS(ON) < 31mΩ (VGS = -1.8V)

ESD Protected

DFN 3x2 D
Top View Bottom View

Pin 1
D D Rg
D D
G
D D
G S

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -9
Current TA=70°C ID -7 A
C
Pulsed Drain Current IDM -60
TA=25°C 2.5
Power Dissipation B PD W
TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 42 50 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady State 74 90 °C/W
Maximum Junction-to-Lead Steady State RθJL 25 30 °C/W

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AON4407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -12 V
VDS=-12V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 -0.5 -0.85 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 A
VGS=-4.5V, ID=-9A 16.5 20
mΩ
TJ=125°C 22 26
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A 20 25 mΩ
VGS=-1.8V, ID=-7.5A 24 31 mΩ
VGS=-1.5V, ID=-7A 29 38 mΩ
gFS Forward Transconductance VDS=-5V, ID=-9A 45 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.53 -1 V
IS Maximum Body-Diode Continuous Current -2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1740 2100 pF
Coss Output Capacitance VGS=0V, VDS=-6V, f=1MHz 334 pF
Crss Reverse Transfer Capacitance 200 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 1.7 kΩ
SWITCHING PARAMETERS
Qg Total Gate Charge 19 23 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-6V, ID=-9A 4.5 nC
Qgd Gate Drain Charge 5.3 nC
tD(on) Turn-On DelayTime 240 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-6V, RL=0.67Ω, 580 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 7 µs
tf Turn-Off Fall Time 4.2 µs
trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/µs 22 27 ns
Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs 17 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 1: June 2009

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60

-4.5V -2.5V VDS=-5V

50 50
-3V

40 40
-2V

-ID(A)
-ID (A)

30 30

20 20

VGS=-1.5V 125°C
10 10
25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics(Note E) Figure 2: Transfer Characteristics(Note E)

45 1.6
VGS=-1.5V
40 1.5 VGS=-4.5V
Normalized On-Resistance

ID=-9A
35 1.4
RDS(ON) (mΩ )

VGS=-2.5V 1.3
30 VGS=-1.8V
1.2
25
1.1 VGS=-1.8V
20 ID=-7.5A
1.0
VGS=-1.5V
15 0.9
VGS=-4.5V ID=-7A
10 0.8
0 2 4 6 8 10 I12
F=-6.5A,
14 16dI/dt=100A/µs
18 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage(Note E) Temperature(Note E)

50 1E+01
45 ID=-9A
1E+00
40
1E-01 125°C
RDS(ON) (mΩ )

35
-IS (A)

30 1E-02
125°C 25°C
25
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
20 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF 15 1E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN,
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10 1E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)

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AON4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4.5 2800

4 VDS=-6V
2400
ID=-9A
3.5 Ciss
2000

Capacitance (pF)
3
-VGS (Volts)

2.5 1600

2 1200
1.5
800 Coss
1
0.5 400
Crss
0 0
0 4 8 12 16 20 0 2 4 6 8 10 12
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000
10µs TJ(Max)=150°C
1ms TA=25°C
RDS(ON)
10
limited 100
Power (W)
-ID (Amps)

10ms
1
100ms
DC 10
10s
0.1
TJ(Max)=150°C
TA=25°C 1
0.01 0.00001 0.001 0.1 10 1000
0.01 0.1 1
I =-6.5A,
F 10
dI/dt=100A/µs
100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note F) to-Ambient (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=90°C/W

0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

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AON4407

Gate Charge Test Circuit & W aveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & W aveforms

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & W aveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com