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Datasheet IRFP32N50K
Datasheet IRFP32N50K
SMPS MOSFET
IRFP32N50K
Applications HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
VDSS RDS(on)typ. ID
l High Speed Power Switching 500V 0.135Ω 32A
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current TO-247AC
l Low RDS(on)
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 450 mJ
IAR Avalanche Current ––– 32 A
EAR Repetitive Avalanche Energy ––– 46 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
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10/19/04
IRFP32N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.135 0.16 Ω VGS = 10V, ID = 32A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = V GS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
IDSS Drain-to-Source Leakage Current
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 32
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A, as Coss while VDS is rising from 0 to 80% VDSS .
Rθ is measured at TJ approximately 90°C
ISD ≤ 32A, di/dt ≤ 296A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
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IRFP32N50K
1000 100
VGS VGS
TOP 15V TOP 15V
12V 12V
I D, Drain-to-Source Current (A)
5.0V
1
1
0.1 5.0V
1000 3.0
ID = 32A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
100 TJ = 150° C
2.0
(Normalized)
10 1.5
TJ = 25 ° C
1.0
1
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4 5 7 8 9 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)
100000 20
V GS = 0V, f = 1 MHZ ID = 32A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 400V
Ciss
12
1000
Coss 8
100
4
Crss
10 0
1 10 100 1000 0 40 80 120 160 200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
100
ID , Drain Current (A)
TJ = 150° C
100
10us
10
100us
TJ = 25 ° C 10
1
1ms
TC = 25 °C
TJ = 150 °C
V GS = 0 V Single Pulse 10ms
0.1 1
0.2 0.6 0.9 1.3 1.6 10 100 1000 10000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
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IRFP32N50K
35 RD
VDS
30 VGS
D.U.T.
RG
ID , Drain Current (A)
+
25 -VDD
20 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
VDS
5
90%
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response(Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
PDM
0.02 SINGLE PULSE
0.01 0.01 (THERMAL RESPONSE) t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRFP32N50K
800
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 14A
20A
640 BOTTOM 32A 15V
480 DRIVER
VDS L
320 RG D.U.T +
V
- DD
IAS A
20V
160 tp 0.01Ω
I AS
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V .2µF
.3µF
VGS
+ QGS QGD
V
D.U.T. - DS
VGS VG
3mA
IG ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform
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IRFP32N50K
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRFP32N50K
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/04
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