Introduction to

Electrical and Computer Engineering

Lecture 4
 Handout 09
Diodes

Ref. M. -C. Brunet 2

  𝒗 ≥ 𝑽𝑶𝑵 : diode is forward-biased

 𝒗 < 𝑽𝑶𝑵 : diode is reverse-biased

Ref. M. -C. Brunet 3

 𝑖 = 𝐼𝑆 𝑒 𝑞𝑣 𝑛𝓀𝑇
−1

𝑻 𝑲 = 𝒕 oC + 𝟐𝟕𝟑
A
𝟏 ≤ 𝒏 ≤ 𝟐: depending on the material and the
physical structure of the diode

𝒌𝑻
Let 𝑽𝑻 = , we have:
𝒒

𝑖 = 𝐼𝑆 𝑒 𝑣 𝑛𝑉𝑇
−1
The voltage VT is a constant called the thermal voltage .

Ref. M. -C. Brunet 4

 ForwardofBias
The IV characteristic Region
a silicon junction diode

𝑖 = 𝐼𝑆 𝑒 𝑣 𝑛𝑉𝑇
−1
𝑣
≅ 𝐼𝑆 𝑒 𝑛𝑉𝑇

Reverse Forward

(or –VZ) 𝑖≈0 𝑖>0

−𝑰𝑺
𝑖 ≅ −𝐼𝑆 ≈ 0

Zener diode: (or forward voltage drop VON)

𝒗 < −𝑽𝐙𝐊

5
 Forward –biased region
𝒗 ≥ VON, and 𝒊 > 0

Reversed –biased region Forward voltage drop VON

𝒗 < VON, and 𝒊 < 0 (and There is current (𝒊 > 0).
very small sometimes 
ignore it  𝒊 ≈ 𝟎)
VON

Ref. M. -C. Brunet P = 𝒗.𝒊 > 0 always! 6

 4.5mA
0.5V

+ -
iD

𝟓 − 𝒗𝑫
𝒊𝑫 =
𝟏𝒌

 Operating point
4.5mA


Assume that
VON = 0.5V
Ref. M. -C. Brunet 7
 Graphic solution???

use “models”
⟹ approximate solutions.

IV characteristic is approximated
by “easier” IV-lines.

Ref. M. -C. Brunet 8

 : 𝒗 = 𝑽𝑶𝑵
𝒗 = VON

𝒊 < 𝟎 and very small : 𝒊 = 𝟎

𝒊≈𝟎
𝒊=𝟎 𝐨𝐩𝐞𝐧 − 𝐜𝐢𝐫𝐜𝐮𝐢𝐭
𝒊=𝟎
 
+𝒗 −
𝒗 < 𝑽𝑶𝑵

𝒗 = 𝑽𝑶𝑵 𝑽𝑶𝑵
+ −
𝒊
𝒊>𝟎
Ref. M. -C. Brunet 𝐂𝐡𝐞𝐜𝐤: 𝐢𝐬 𝐭𝐡𝐞 𝐩𝐚𝐢𝐫 𝒗, 𝒊 𝐨𝐧 𝐭𝐡𝐞 𝐠𝐫𝐚𝐩𝐡? 9
 Assume VON = 0.5V

not
incorrect on
𝒊𝑫 = 𝟎 assumption!
the
+  graph
𝒗𝑫 𝒗𝑫 = 𝟓𝐕
-  

Ref. M. -C. Brunet 10

 Assume VON = 0.5V

𝒊𝑫 on
𝟓 − 𝟎. 𝟓  the
𝒊𝑫 =
+
𝟏𝒌 graph
0.5V = 𝟒. 𝟓𝐦𝐀
-

Correct
assumption!
Diode is ON
Ref. M. -C. Brunet 11
 𝒊𝟐 = 𝟎
𝒊𝟐
− +
−𝒗 + 𝒊𝟏
+ 𝟐 + 0.7V
𝒊𝟏 = 𝟎 𝒗𝟏 0.7V +
− 𝒗𝟏
- -

0A 2V
0A -2V

𝒊𝟐 𝒊𝟐
− +
− 𝒗𝟐 +
+ 0.7V 𝒊+𝟏
𝒊𝟏 𝒗𝟏 0.7V +
− 𝒗𝟏
- -

Ref. M. -C. Brunet Lê Chí Thông 12

 𝑰

Assume that diode is forward-biased

⟹ 𝒗𝑫 = 𝑽𝑶𝑵 = 𝟎. 𝟕𝑽
𝟓 − 𝟎. 𝟕
⟹ 𝒊𝑫 = 𝑰 = −
𝟐𝒌 0.7V +

= 𝟐. 𝟏𝟓𝐦𝐀 > 𝟎
𝑰
⟹ 𝐝𝐢𝐨𝐝𝐞 𝐢𝐬 𝐎𝐍
Ref. M. -C. Brunet 13
 𝑰

Diodes 3 and 4
are in series.

𝑿 𝑿
𝑿
𝒊𝟏 0.7V 𝒊𝟐 0.7V
+- +-
𝒗-
𝟒
+
𝒗-
𝟑
+

Ref. M. -C. Brunet Lê Chí Thông 14

Ref. M. -C. Brunet Lê Chí Thông 15
 Approximate solution:
𝒗𝑫 = 𝟎𝐕
𝒊𝑫 = 𝟐𝐦𝐀

Approximate solution: 𝒗𝑫 = 𝟎. 𝟕𝐕, 𝐚𝐧𝐝 𝒊𝑫 = 𝟏. 𝟔𝟓𝐦𝐀

Ref. M. -C. Brunet 16
 𝑰≥𝟎 𝒊𝑫 ≤ 𝟎 (R.B.)

+ 𝒊𝑫 = 𝟎𝐀
𝑣𝐷 𝒗𝑫 = −𝟒𝐕
-

+ 𝒊𝑫 = 𝑰𝐑𝐁 = −𝟏𝟎𝛍𝐀
−𝟏𝟎𝛍𝐀 𝑣𝐷 𝒗𝑫 = 𝟏𝟎𝛍𝐀. 𝟐𝐤 − 𝟒 = −𝟑. 𝟗𝟖𝐕
Ref. M. -C. Brunet - 17
Ref. M. -C. Brunet 18
Ref. M. -C. Brunet 19
Ref. M. -C. Brunet 20
Ref. M. -C. Brunet 21
Ref. M. -C. Brunet 22
 R.B. F.B.
region region

Breakdown
region

Ref. M. -C. Brunet 23

 𝑰≥𝟎
𝒊

𝒊𝑫 ≤ 𝟎

-7 -5
 𝒗
𝟎 0.7 𝒊𝑫 ≥ 𝟎; 𝒊𝑫 = 𝟎;
𝒗𝑫 = 𝑽𝑶𝑵 −𝑽𝒛 < 𝒗𝑫 < 𝑽𝐎𝐍
0.7V -
- 𝒗𝑫
+
+
cannot since 𝒗𝑫 = −𝟕𝐕 not
𝒊𝑫 ≤ 𝟎 on the graph
𝒗𝑫 = −𝑽𝒛 ;
𝒊𝑫 < 𝟎
− −𝟓 − 𝟕
𝒊𝑫 = - -5V
𝟒𝒌 +
= −𝟎. 𝟓𝐦𝐀 𝒊𝑫

Ref. M. -C. Brunet 24

Ref. M. -C. Brunet 25
 Assume the zener diode operates in breakdown region:

−𝒗𝑫 = 𝑽𝒛 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
𝒊𝑳 > 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 𝑽𝒔 − 𝑽𝒛 𝒊𝑳 − 𝒊𝒔

𝒊𝑳 < 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
Ref. M. -C. Brunet 26
 𝑰 A
−

𝒗𝑫
+ 𝒊𝑫

???
???
When 𝒊𝑫 < 𝟎, the diode is in breakdown region.
𝒗𝑫 = −𝑽𝒛 = −𝟕𝐕
𝒗𝑳 = −𝒗𝑫 = +𝑽𝒛 = 𝟕𝐕
KCL @ A: 𝑰 + 𝒊𝑫 = 𝒊𝑳 (*)
𝟏𝟎+𝒗𝑫 𝟏𝟎−𝟕
where 𝑰 = = = 𝟏. 𝟓𝐦𝐀
𝟐𝒌 𝟐𝒌
(*) ⟹ 𝟏. 𝟓 + 𝒊𝑫 = 𝒊𝑳 ⟹ 𝒊𝑫 < 𝟎 ⟺ 𝒊𝑳 < 𝟏. 𝟓𝐦𝐀
Ref. M. -C. Brunet 27
 𝒊𝒔 ≥ 𝟎
𝒊𝑳 ≥ 𝟎
𝒊𝑫 ≤ 𝟎

breakdown OFF
@ breakdown region
𝒊𝑫 = 𝒊𝑳 − 𝒊𝒔

𝒊𝒔 = 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 -5mA -3mA 0mA 0mA

@ OFF region -5V -5V -3V -1V
𝒊𝑫 = 𝟎
𝒊𝒔 = 𝒊𝑳 5V 5V 3V 1V
Breakdown region:
𝒊𝑳 < 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 = 𝟏𝟓 − 𝟓 𝟐𝒌 = 𝟓𝐦𝐀
For 𝒊𝑳 > 𝟓𝐦𝐀, diode is OFF.
Ref. M. -C. Brunet 28
Ref. M. -C. Brunet Lê Chí Thông 29
 Solar
cell
𝑽𝐎𝐍
−𝑰𝒔 𝒗>𝟎
Ref. M. -C. Brunet 𝒊<𝟎
⟺ source 30
−𝑰𝒔 − 𝑰𝒐
Breakdown region

The Diode Clipper

Ref. M. -C. Brunet 31

 Example 8: Diode Clipping Circuits

𝒗𝑫 = 𝟎 𝑽𝐢𝐧 + 𝟐𝟎𝟎
𝒊𝑫 =
A 0A 𝑹
 𝑽𝐨𝐮𝐭 = 𝑽𝐀𝐁 = −𝟐𝟎𝟎
+
𝒗𝑫
𝒊𝑫
−
𝒊𝑫 > 𝟎?

B 𝒊𝑫 > 𝟎 when 𝑽𝐢𝐧 > −𝟐𝟎𝟎
𝒊𝑫 = 𝟎
0A 0A
𝒗𝑫 = 𝑽𝐢𝐧 + 𝟐𝟎𝟎
+ 𝒊𝑫 = 𝟎
𝒗𝑫 𝑽𝐨𝐮𝐭 = 𝑽𝐢𝐧
−
𝒗𝑫 < 𝟎?
𝒗𝑫 < 𝟎 when 𝑽𝐢𝐧 < −𝟐𝟎𝟎
Ref. M. -C. Brunet 32
 𝑽𝐢𝐧 > −𝟐𝟎𝟎:
diode is ON
𝑽𝐨𝐮𝐭 = 𝑽𝐀𝐁 = −𝟐𝟎𝟎
-200
𝑽𝐢𝐧 < −𝟐𝟎𝟎:
diode is OFF
𝑽𝐨𝐮𝐭 = 𝑽𝐢𝐧

𝑽𝐢𝐧 + 𝟐𝟎𝟎
𝒊𝑫 =
𝑹
Ref. M. -C. Brunet 33
Ref. M. -C. Brunet Lê Chí Thông 34
Ref. M. -C. Brunet Lê Chí Thông 35
 Handout 10
Bipolar Junction Transistor (BJT)

Ref. M. -C. Brunet 36

 Models

Ref. M. -C. Brunet 37

 B: Base
C: Collector
E: Emitter

99%
1%

Ref. M. -C. Brunet 38

 𝒊𝑩 𝑽𝑪𝑩
𝒊𝑪 𝑽𝑪𝑬
𝑽𝑩𝑬
𝒊𝑬

𝒊𝑩 > 𝟎 𝑽𝑩𝑬 > 𝟎

𝒊𝑪 > 𝟎 𝑽𝑪𝑬 > 𝟎
(BJT is ON) (BJT is ON)

Ref. M. -C. Brunet 39

Ref. M. -C. Brunet 40
 𝒊𝑪
𝒊𝑩 +
+ 𝑽𝑪𝑬
𝑽𝑩𝑬
− −

Input IV Output IV
𝒊𝑩 𝒊𝑪

𝑽𝑩𝑬 𝑽𝑪𝑬

Ref. M. -C. Brunet 41

 Characteristics of Common-Emitter
(npn transistor)

Ref. M. -C. Brunet 42

Ref. M. -C. Brunet 43
 𝒊𝑪 < 𝜷𝒊𝒃

Ref. M. -C. Brunet 44

 𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)

⟹ BJT has to be OFF.
Assume BJT is ON. ⟹ 𝒊𝑩 = 𝟎 ⟹ 𝒊𝑪 = 𝟎
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 = 𝟓𝑽
KVL (input): 0A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 0A
𝟎.𝟏−𝟎.𝟕 𝑽𝑪𝑬 = 𝟓𝑽
⟹ 𝒊𝑩 = <𝟎 OFF
𝟒𝟎𝒌
Ref. M. -C. Brunet
Note: if 𝑽𝐢𝐧 < 𝑽𝐁𝐄𝐎𝐍 , BJT is OFF 45
 𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)

2 0.8V Assume BJT is active.
Assume BJT is ON. ⟹ 𝒊𝑪 = 𝜷𝒊𝒃 = 𝟎. 𝟐𝟓𝐦𝐀
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 = 𝟒. 𝟕𝟓𝑽
KVL (input): 2.5𝝁A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 0.25mA
𝟎.𝟖−𝟎.𝟕 𝑽𝐂𝐄 = 𝟒. 𝟕𝟓𝑽
⟹ 𝒊𝑩 = = 𝟐. 𝟓𝛍𝐀 ACTIVE
𝟒𝟎𝒌
Ref. M. -C. Brunet 46
 𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)

3 3.0V Assume BJT is active.
Assume BJT is ON. ⟹ 𝒊𝑪 = 𝜷𝒊𝒃 = 𝟓. 𝟕𝟓𝐦𝐀
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 < 𝑽𝐂𝐄𝐒𝐀𝐓
KVL (input): 57.5𝝁A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 4.8mA
𝟑−𝟎.𝟕 𝑽𝐂𝐄𝐒𝐀𝐓 = 𝟎. 𝟐𝑽
⟹ 𝒊𝑩 = = 𝟓𝟕. 𝟓𝛍𝐀 SATURATED
𝟒𝟎𝒌
Ref. M. -C. Brunet
Note: if BJT is SATURATED, 𝒊𝑪 < 𝜷𝒊𝒃 47
 0 0 5 OFF
0 0 5 OFF
2.5 0.25 4.75 ACTIVE
32.5 3.25 1.75 ACTIVE
57.5 4.8 0.2 SATURATED

82.5 4.8 0.2 SATURATED

When BJT is saturated:

• 𝒊𝑪 is called as 𝒊𝐂𝐦𝐚𝐱 . It is the maximum value of 𝒊𝑪 .
• 𝒊𝐂𝐦𝐚𝐱 < 𝜷𝒊𝒃
• 𝑽𝐂𝐄 = 𝑽𝐂𝐄𝐒𝐀𝐓 (typical ~𝟎. 𝟐𝑽)
48
 0 0 HIGH OFF
LARGE 𝒊𝐂𝐦𝐚𝐱 LOW SATURATED

MEDIUM 𝜷𝒊𝒃 MEDIUM ACTIVE

VCC

VCESAT VBEON

Ref. M. -C. Brunet 49

Power
dissipated
in BJT

𝑷𝐒𝐑𝐒 = −𝑽𝐁𝐄 𝒊𝑩 𝑷𝐒𝐑𝐒 = −𝑽𝐂𝐄 𝒊𝑪 50

 𝑷𝑻 = 𝟎
𝑷𝑻 = 𝑽𝑩𝑬 + 𝜷𝑽𝑪𝑬 𝒊𝑩
𝑷𝑻 = 𝑽𝑩𝑬 𝒊𝑩 + 𝑽𝑪𝑬𝑺𝑨𝑻 𝒊𝑪𝐦𝐚𝐱

Ref. M. -C. Brunet 51

Ref. M. -C. Brunet 52
Ref. M. -C. Brunet 53
Ref. M. -C. Brunet 54
 Given BJT parameters: VBEON = 0.7V, VCESAT = 0.2V, 𝜷 = 𝟑𝟎𝟎
Find VB, VC, VE and state of transistor.

Ref. M. -C. Brunet 55